Characterization of the insulation and leakage currents of PV generators: Relevance for human safety

2010 ◽  
Vol 35 (3) ◽  
pp. 593-601 ◽  
Author(s):  
J.C. Hernández ◽  
P.G. Vidal ◽  
A. Medina
Keyword(s):  
Leakage Currents ◽  
Human Safety

Amorphous Silicon TFTs on Steel-Foil Substrates

1996 ◽  
Vol 424 ◽  
Author(s):  
S. D. Theiss ◽  
S. Wagner
Keyword(s):  
Stainless Steel ◽  
Leakage Currents ◽  
Action Current ◽  
Insulating Layer ◽  
Stainless Steel Foil ◽  
Current Voltage ◽  
Stainless Steel Foils ◽  
Steel Foils ◽  
Current Behavior

AbstractWe describe the successful fabrication of device-quality a-Si:H thin-film transistors (TFTs) on stainless-steel foil substrates. These TFTs demonstrate that transistor circuits can be made on a flexible, non-breakable substrate. Such circuits could be used in reflective or emissive displays, and in other applications that require rugged macroelectronic circuits.Two inverted TFT structures have been made, using 200 gim thick stainless steel foils with polished surfaces. In the first structure we used the substrate as the gate and utilized a homemade mask set with very large feature sizes: L = 45 μm; W = 2.5 mm. The second, inverted staggered, structure used a 9500 Å a-SiNx:H passivating/insulating layer deposited on the steel to enable the use of isolated gates. For this structure we used a mask set which is composed of TFTs with much smaller feature sizes. Both TFT structures exhibit transistor action. Current-voltage characterization of the TFTs with the inverted staggered structure shows typical on/off current ratios of 107, leakage currents on the order of 10-12 A, good linear and saturation current behavior, and channel mobilities of 0.5 cm2/V·sec. These characteristics clearly identify the TFTs grown on stainless steel foil as being of device quality.

Material Characterization Of Methyl Siloxane Sogs

1995 ◽  
Vol 381 ◽  
Author(s):  
Ken Numata ◽  
Thomas R. Seha ◽  
Shin-Puu Jeng ◽  
Tsuyoshi Tanaka
Keyword(s):  
Material Characterization ◽  
Interesting Property ◽  
Moisture Resistance ◽  
Filling Material ◽  
Number Density ◽  
Gap Filling ◽  
Leakage Currents ◽  
Ft Ir ◽  
Low Permittivity

AbstractMethyl siloxane spin-on-glass (SOG) is a conventional gap-filling material. In accordance with the requirement of low permittivity, many of major SOG suppliers are developing new types of methyl siloxane SOGs.The most interesting property of these SOGs is their permittivity, which we measured by making stack structures of Al-0.5%Cu / TEOS CVD SiO2 / SOG / n+ Si. We also studied I-V characteristics, refractive indices, FT-IR spectra, stress, and moisture resistance.All of the SOGs showed small stress and fair moisture resistance. Leakage currents were less than 2.5E-10 A/cm2 for bias voltages up to 5V. Permittivities ranged from 2.9 to 3.6. We observed a correlation between permittivity and FT-IR spectral features associated with Si-O-Si bonds. Reducing the number density of Si-O-Si bonds may be an effective way to lower the permittivity of this class of SOGs

scholarly journals Significance of Microstructure for a MOCVD-Grown YSZ Thin Film Gas Sensor

1995 ◽  
Vol 403 ◽  
Author(s):  
J. Vetrone ◽  
C. Foster ◽  
G. Bai
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Growth Conditions ◽  
Leakage Currents ◽  
Film Sensor ◽  
Low Leakage ◽  
Ion Conductivities ◽  
Gas Sensing Properties

AbstractWe report the fabrication and characterization of a low temperature (200°C-400°C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

Characterization Of Sol-Gel Derived Tantalum Oxide Films

1986 ◽  
Vol 73 ◽  
Author(s):  
L. A. Silverman ◽  
G. Teowee ◽  
D. R. Uhlmann
Keyword(s):  
Dielectric Constant ◽  
Original Film ◽  
Room Temperature ◽  
Sol Gel ◽  
Tantalum Oxide ◽  
Leakage Currents ◽  
Applied Fields ◽  
Mis Capacitors ◽  
Hydrolysis Of

ABSTRACTWe have studied the densification and dielectric properties of sol-gel derived tantalum oxide thin films as the insulators in MIS capacitors. Hydrolysis of tantalum ethoxide is extremely rapid and goes to completion in ethanol. Condensation is also rapid, and goes to completion in toluene Multiple layers were applied by spin-coating up to thicknesses of 3000 Å before cracking of the coating during drying ensued. Densification occurs from room temperature to 450 C, with the original film thickness decreasing by about half in one hour at 450 C. No additional densification occurs upon heating to 750 C. The dielectric constant decreases from unfired samples to those fired at 450 C, and then increases on firing from 600 to 750 C. The value of the dielectric constant at 1 MHz for samples fired at 750 C for one hour is 20, similar to that of anodically grown Ta2O5. Leakage currents as low as 2 × 10−7 amp cm−2 have been measured for applied fields of 200,000 V cm−1.

Characterization of Mos Structures with Ultra-Thin Tunneling Oxynitride

1995 ◽  
Vol 405 ◽  
Author(s):  
H. Fujioka ◽  
C. Wann ◽  
D. Park ◽  
C. Hu
Keyword(s):  
Silicon Oxynitride ◽  
Gate Insulator ◽  
Leakage Currents ◽  
Tunneling Mechanism ◽  
Conventional Furnace ◽  
Pure Oxide ◽  
Boron Penetration ◽  
P Type ◽  
Mos Structures

AbstractCharacteristics of ultrathin silicon oxynitride (15–25Å) and its interface with Si have been investigated. Oxynitride films with thickness down to 15Å can be grown reproducibly in a conventional furnace. The leakage currents through these films can be well explained by the direct tunneling mechanism and can be fit by the same equation as that for pure oxide. This result indicates that incorporation of nitrogen atoms does not seriously affect the basic properties of the film and its interface such as the effective mass and the barrier height. A p-type poly gate MOS structure with 22Å oxynitride has also been fabricated successfully without boron penetration even using BF2+ ion implantation and a conventional furnace. Since the leakage current thorough oxynitride with this thickness is acceptable for circuit operation, thickness of the gate insulator in the dual poly-Si process can be scaled down at least to 22Å.

scholarly journals Characterization of Surface and Sub- Surface Defects on Devices using Complimentary Techniques

2008 ◽  
Vol 16 (6) ◽  
pp. 18-20
Author(s):  
Vincent S. Smentkowski ◽  
Sara G. Ostrowski ◽  
Lauraine Denault ◽  
Charles G. Woychik
Keyword(s):  
Gamma Ray ◽  
Surface Defects ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Surface Composition ◽  
Electrical Contacts ◽  
Leakage Currents ◽  
Contact Metallization ◽  
Secondary Ion

Being able to differentiate surface from bulk defects on devices requires the use of complimentary characterization tools. In this article, we show how light microscopy, scanning electron microscopy, energy dispersive X-ray analysis, and time of flight secondary ion mass spectrometry provides complimentary information about the surface and sub-surface composition, topography, and microstructure of a semiconductor device.To create a gamma-ray spectroscopy detector, electrical contacts consisting of a blanket coated cathode and a pixilated anode can be deposited directly on opposite faces of a cadmium zinc telluride (CZT) crystal. The contact metallization must adhere to the surfaces, and the streets between adjacent anode pads must be free of residual metal and contaminants to avoid excessive interpixel leakage currents. The analysis reported below was used to validate the structure and composition of the contact metal stack and to characterize the streets of the anode pad array.

Characterization of CMOS Devices in 0.5-μm Silicon-On-Sapphire Films Modified by Solid Phase Epitaxy and Regrowth (Spear)

1984 ◽  
Vol 33 ◽  
Author(s):  
P.K. Vasudev ◽  
D.C. Mayer
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Solid Phase Epitaxy ◽  
Epitaxial Silicon ◽  
Leakage Currents ◽  
Propagation Delays

ABSTRACTComplementary Metal-Oxide-Semiconductor (CMOS) devices and circuits with minimum feature sizes of about 1 μm were fabricated in 0.5-μm-thick epitaxial Silicon-On-Sapphire (SOS) films. The films were modified by ion implantation and subsequent solid phase recrystallization processes which reduced the total microtwin concentrations in the Si layers by more than a hundredfold, while increasing electron and hole channel mobilities between 40 to 50%. Leakage currents were reduced by over 2 orders of magnitude, while drive currents and subthreshold slopes showed significant improvements over as–grown SOS films. Propagation delays of less than 80 psec were obtained for CMOS/SOS inverters with Leff = 0.6 μm.

Characterization of Sol-Gel Derived Tantalum Oxide Films

1986 ◽  
Vol 72 ◽  
Author(s):  
L. A. Silverman ◽  
G. Teowee ◽  
D. R. Uhlmann
Keyword(s):  
Dielectric Constant ◽  
Original Film ◽  
Room Temperature ◽  
Sol Gel ◽  
Tantalum Oxide ◽  
Leakage Currents ◽  
Applied Fields ◽  
Mis Capacitors ◽  
Hydrolysis Of

AbstractWe have studied the densification and dielectric properties of sol-gel derived tantalum oxide thin films as the insulators in MIS capacitors. Hydrolysis of tantalum ethoxide is extremely rapid and goes to completion in ethanol. Condensation is also rapid, and goes to completion in toluene Multiple layers were applied by spin-coating up to thicknesses of 3000 Å before cracking of the coating during drying ensued. Densification occurs from room temperature to 450 C, with the original film thickness decreasing by about half in one hour at 450 C. No additional densification occurs upon heating to 750 C. The dielectric constant decreases from unfired samples to those fired at 450 C, and then increases on firing from 600 to 750 C. The value of the dielectric constant at 1 MHz for samples fired at 750 C for one hour is 20, similar to that of anodically grown Ta2O5. Leakage currents as low as 2 × 10−7 amp cm−2 have been measured for applied fields of 200,000 V cm−1.

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