Anchoring HFO nanoparticles on MWCNTs as high electron transfer composite adsorbent for the removal of H2S at low temperature

Author(s):  
Ke Ji ◽  
Yongchun Zhang ◽  
Hong Li ◽  
Tianqinji Qi ◽  
Xiaojing Li ◽  
...  
Molecules ◽  
2021 ◽  
Vol 26 (4) ◽  
pp. 1092
Author(s):  
Ban Chen ◽  
Xican Li ◽  
Xiaojian Ouyang ◽  
Jie Liu ◽  
Yangping Liu ◽  
...  

Synthetic arylamines and dietary phytophenolics could inhibit ferroptosis, a recently discovered regulated cell death process. However, no study indicates whether their inhibitory mechanisms are inherently different. Herein, the ferroptosis-inhibitory mechanisms of selected ferrostatin-1 (Fer-1) and two dietary stilbenes (piceatannol and astringin) were compared. Cellular assays suggested that the ferroptosis-inhibitory and electron-transfer potential levels decreased as follows: Fer-1 >> piceatannol > astringin; however, the hydrogen-donating potential had an order different from that observed by the antioxidant experiments and quantum chemistry calculations. Quantum calculations suggested that Fer-1 has a much lower ionization potential than the two stilbenes, and the aromatic N-atoms were surrounded by the largest electron clouds. By comparison, the C4′O-H groups in the two stilbenes exhibited the lowest bond disassociation enthalpies. Finally, the three were found to produce corresponding dimer peaks through ultra-performance liquid chromatography coupled with electrospray ionization quadrupole time-of-flight tandem mass spectrometry analysis. In conclusion, Fer-1 mainly depends on the electron transfer of aromatic N-atoms to construct a redox recycle. However, piceatannol and astringin preferentially donate hydrogen atoms at the 4′-OH position to mediate the conventional antioxidant mechanism that inhibits ferroptosis, and to ultimately form dimers. These results suggest that dietary phytophenols may be safer ferroptosis inhibitors for balancing normal and ferroptotic cells than arylamines with high electron-transfer potential.


2021 ◽  
Author(s):  
Mingming Su ◽  
Yajing Hu ◽  
Ao Yu ◽  
Zhiyao Peng ◽  
Wangtao Long ◽  
...  

Broadband photodetectors fabricated with organic molecules have the advantages of low cost, high flexibility, easy processing and low-temperature requirement. Fullerene molecules, due to the electron acceptor and photoinduced electron transfer...


Author(s):  
Tilman Beierlein ◽  
S. Strite ◽  
A. Dommann ◽  
D. J. Smith

We have investigated the properties of InGaN grown at low temperature on glass substrates by a plasma enhanced MBE process. The goal of this study was to evaluate the potential of InGaN as an oxide-free, transparent conductor material which could be deposited at or slightly above room temperature with minimal interaction or damage to the underlying material. InxGa1−xN films deposited on glass, even without substrate heating, are highly crystalline, but the crystallinity as measured by x-ray degrades at x < 0.5. The microstructure observed by TEM of InGaN films deposited on unheated substrates is highly columnar, with typical column widths of ~10 nm. The optical absorption spectra of InGaN/glass have a distinct absorption edge at the bandgap, but also high background absorption in the bandgap. InxGa1−xN grown on glass (x > 0.5) is conductive due to its high electron concentration. InN electron Hall mobilities > 20 cm2/Vs when grown at 400°C, and ~ 7 cm2/Vs on unheated substrates were obtained. The addition of GaN degraded the electrical properties of the films to a greater extent than it improved the transparency. As a result, the best transparent conductor films were pure InN which, when deposited at 400°C, were half as transparent in the green as an indium tin oxide film having the same sheet resistance.


Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1858
Author(s):  
Matthew Whiteside ◽  
Subramaniam Arulkumaran ◽  
Yilmaz Dikme ◽  
Abhinay Sandupatla ◽  
Geok Ing Ng

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT showed a maximum drain current (IDmax) of 708 mA/mm at a gate bias of 4 V and a maximum extrinsic transconductance (gmmax) of 129 mS/mm. The 400 °C annealed MISHEMT exhibited an increase of 15% in gmmax, an order of magnitude reduction in reverse gate leakage and about a 3% suppression of drain current (ID) collapse. The increase of gmmax by post-gate annealing is consistent with the increase of 2DEG mobility. The suppression of ID collapse and the reduction of gate leakage current is attributed to the reduction of interface state density (5.0 × 1011 cm−2eV−1) between the AlN/GaN interface after post-gate annealing at 400 °C. This study demonstrates that LTE grown AlN is a promising alternate material as gate dielectric for GaN-based MISHEMT application.


2002 ◽  
Vol 362 (3) ◽  
pp. 749-754 ◽  
Author(s):  
Ziedulla Kh. ABDULLAEV ◽  
Marina E. BODROVA ◽  
Boris V. CHERNYAK ◽  
Dmitry A. DOLGIKH ◽  
Ruth M. KLUCK ◽  
...  

A cytochrome c mutant lacking apoptogenic function but competent in electron transfer and antioxidant activities has been constructed. To this end, mutant species of horse and yeast cytochromes c with substitutions in the N-terminal α-helix or position 72 were obtained. It was found that yeast cytochrome c was much less effective than the horse protein in activating respiration of rat liver mitoplasts deficient in endogenous cytochrome c as well as in inhibition of H2O2 production by the initial segment of the respiratory chain of intact rat heart mitochondria. The major role in the difference between the horse and yeast proteins was shown to be played by the amino acid residue in position 4 (glutamate in horse, and lysine in yeast; horse protein numbering). A mutant of the yeast cytochrome c containing K4E and some other ‘horse’ modifications in the N-terminal α-helix, proved to be (i) much more active in electron transfer and antioxidant activity than the wild-type yeast cytochrome c and (ii), like the yeast cytochrome c, inactive in caspase stimulation, even if added in 400-fold excess compared with the horse protein. Thus this mutant seems to be a good candidate for knock-in studies of the role of cytochrome c-mediated apoptosis, in contrast with the horse K72R, K72G, K72L and K72A mutant cytochromes that at low concentrations were less active in apoptosis than the wild-type, but were quite active when the concentrations were increased by a factor of 2–12.


2015 ◽  
Vol 10 (1) ◽  
Author(s):  
Nurul Azzyaty Jayah ◽  
Hafizal Yahaya ◽  
Mohamad Rusop Mahmood ◽  
Tomoaki Terasako ◽  
Kanji Yasui ◽  
...  

2008 ◽  
Vol 1145 ◽  
Author(s):  
Michiharu Tabe ◽  
Zainal Arif Burhanudin ◽  
Ratno Nuryadi ◽  
Daniel Moraru ◽  
Maciej Ligowski ◽  
...  

AbstractWe have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described.


Sign in / Sign up

Export Citation Format

Share Document