Structural and optoelectronic properties of p-type semiconductor CuAlO2 thin films

2012 ◽  
Vol 526 ◽  
pp. 103-108 ◽  
Author(s):  
Ruei-Sung Yu ◽  
Hui-Hsun Yin
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
Type Semiconductor ◽  
P Type ◽  
Structural And Optoelectronic Properties

scholarly journals Synthesis and Characteristics of Zn-Doped CuCrO2 Transparent Conductive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 321
Author(s):  
Ruei-Sung Yu ◽  
Chen Chu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Optoelectronic Properties ◽  
Light Transmittance ◽  
Cross Sectional ◽  
Zinc Doping ◽  
Hall Effect Measurements ◽  
P Type ◽  
Conductive Thin Films ◽  
Structural And Optoelectronic Properties

The effects of doping a p-type CuCrO2 film with zinc on its structural and optoelectronic properties were investigated by experiments using CuCr1−xZnxO2 thin films (x = 0, 0.025, 0.065, 0.085). An increase in the amount of zinc dopant in the thin films affected the lattice constant and increased its Gibbs free energy of phase transformation. Cross-sectional images of the CuCrO2 thin film samples exhibited a dense polygonal microstructure and a surface morphology with protruding nanoscale granules. With the increase in the amount of Zn dopant, the surface roughness decreased, thereby increasing the amount of incident photons as well as the visible-light transmittance and ultraviolet-light absorption of the thin films. With the zinc doping in the CuCrO2 thin films, the band gap increased from 3.09 to 3.11 eV. The substitution of Cr3+ with Zn2+ forms hole carriers in the crystals, which was demonstrated by X-ray photoelectron spectroscopy and Hall effect measurements. The conductivities and carrier concentrations of the Zn-doped CuCrO2 thin films were greater than those of undoped CuCrO2. The CuCr1−xZnxO2 film (x = 0.065) exhibited the best optoelectronic properties; its carrier concentration and resistivity were 1.88 × 1017 cm−3 and 3.82 Ωcm, respectively.

Optoelectronic properties of transparent p-type semiconductor CuxS thin films

2010 ◽  
Vol 207 (7) ◽  
pp. 1652-1654 ◽  
Author(s):  
P. Parreira ◽  
G. Lavareda ◽  
J. Valente ◽  
F.T. Nunes ◽  
A. Amaral ◽  
...  
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
Type Semiconductor ◽  
P Type

Photoassisted Electrodeposition of Cuprous Oxide Thin Films

2021 ◽  
Vol 105 (1) ◽  
pp. 441-452
Author(s):  
Katharina Mairhofer ◽  
Bettina Kipper-Pires ◽  
Gerhard Leitner ◽  
Guenter Fafilek
Keyword(s):  
Thin Films ◽  
Cuprous Oxide ◽  
Sem Analysis ◽  
Sufficient Energy ◽  
Tenfold Increase ◽  
Absorption Of Light ◽  
Additional Illumination ◽  
Type Semiconductor ◽  
P Type ◽  
Deposited Films

Well-defined cuprous oxide (Cu2O) thin films can be electrodeposited from an electrolyte containing copper (II) sulfate, lactic acid and sodium hydroxide. As Cu2O is a p-type semiconductor, it is possible to accelerate the process through illumination with light of sufficient energy (>2.1eV). Cyclic voltammetry and transient potentiostatic measurements were performed in a three-electrode setup with copper metalized wafers as a working electrode. Illumination was performed through the electrolyte, therefore absorption of light by the electrolyte had to be taken into consideration. Potentiostatic measurements with a blue LED as a light source have shown an tenfold increase in layer thickness in comparison to depositions without additional illumination. The deposited films were investigated with SEM analysis.

scholarly journals Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 193560-193568
Author(s):  
Mohammad Aminul Islam ◽  
Md. Khan Sobayel Bin Rafiq ◽  
Halina Misran ◽  
Md. Akhtar Uzzaman ◽  
Kuaanan Techato ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Tin Oxide ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Solar Cell Application ◽  
Zinc Tin Oxide ◽  
Structural And Optoelectronic Properties

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Electrodeposition and Properties of CuInS2 Thin Films

2013 ◽  
Vol 690-693 ◽  
pp. 1659-1663
Author(s):  
Hai Fang Zhou ◽  
Xiao Hu Chen
Keyword(s):  
Thin Films ◽  
Photocurrent Density ◽  
Enhancement Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

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