Plasmonic enhancement of CO2 conversion to methane using sculptured copper thin films grown directly on TiO2

2014 ◽  
Vol 565 ◽  
pp. 105-110 ◽  
Author(s):  
Hyeonseok Lee ◽  
Suil In ◽  
Mark W. Horn
2020 ◽  
Vol 3 (7) ◽  
pp. 6670-6677
Author(s):  
Joo Yeon Kim ◽  
C. Hyun Ryu ◽  
Jeong Heon Lee ◽  
Amol U. Pawar ◽  
Woo-Dong Jang ◽  
...  

Author(s):  
Bablu Mukherjee ◽  
Sandipta Roy ◽  
Ergun Simsek ◽  
Sayantan Ghosh ◽  
Venu G. Achanta ◽  
...  

2016 ◽  
Vol 384 ◽  
pp. 18-26 ◽  
Author(s):  
Małgorzata Norek ◽  
Grzegorz Łuka ◽  
Maksymilian Włodarski

Materials ◽  
2019 ◽  
Vol 12 (17) ◽  
pp. 2840 ◽  
Author(s):  
Alexander Vahl ◽  
Salih Veziroglu ◽  
Bodo Henkel ◽  
Thomas Strunskus ◽  
Oleksandr Polonskyi ◽  
...  

TiO2 thin films are used extensively for a broad range of applications including environmental remediation, self-cleaning technologies (windows, building exteriors, and textiles), water splitting, antibacterial, and biomedical surfaces. While a broad range of methods such as wet-chemical synthesis techniques, chemical vapor deposition (CVD), and physical vapor deposition (PVD) have been developed for preparation of TiO2 thin films, PVD techniques allow a good control of the homogeneity and thickness as well as provide a good film adhesion. On the other hand, the choice of the PVD technique enormously influences the photocatalytic performance of the TiO2 layer to be deposited. Three important parameters play an important role on the photocatalytic performance of TiO2 thin films: first, the different pathways in crystallization (nucleation and growth); second, anatase/rutile formation; and third, surface area at the interface to the reactants. This study aims to provide a review regarding some strategies developed by our research group in recent years to improve the photocatalytic performance of TiO2 thin films. An innovative approach, which uses thermally induced nanocrack networks as an effective tool to enhance the photocatalytic performance of sputter deposited TiO2 thin films, is presented. Plasmonic and non-plasmonic enhancement of photocatalytic performance by decorating TiO2 thin films with metallic nanostructures are also briefly discussed by case studies. In addition to remediation applications, a new approach, which utilizes highly active photocatalytic TiO2 thin film for micro- and nanostructuring, is also presented.


2018 ◽  
Vol 25 ◽  
pp. 254-263 ◽  
Author(s):  
João A. Lima Perini ◽  
Juliano C. Cardoso ◽  
Juliana F. de Brito ◽  
Maria V. Boldrin Zanoni

2013 ◽  
Vol 1509 ◽  
Author(s):  
Akshta Rajan ◽  
Ayushi Paliwal ◽  
Vinay Gupta ◽  
Monika Tomar

ABSTRACTUltraviolet (UV) photoconductivity in pure ZnO thin films and metal (Ag, Au, Pt) nanoparticles (NPs) dispersed on ZnO thin films based UV photodetectors biased at 5 V for ultra violet radiation of λ = 365 nm and intensity = 24 µwatt/cm2 has been studied. All the three metal (Ag, Au, Pt) NPs synthesized by Polyol process when dispersed on the surface of 100 nm thin ZnO film results in enhanced photoconductive gain (K) in comparison to pure ZnO (3.1×103). An increase of about an order in K has been obtained in the case of Ag NPs/ZnO and Au NPs/ZnO UV photodetectors ( K = 6.9×104 and 5.3×104 respectively). On the other hand, Pt NPs enhance K by about two orders (5.0×105). Such an enhanced photoconductive gain has been achieved due to the lowering of dark current after dispersing the metal NPs on the surface of ZnO and increased photocurrent upon UV illumination. This may be attributed to the plasmon propagating property in metal NPs which enhances the light trapping through optical absorption in ZnO thin film surface (high photo current).


2019 ◽  
Vol 88 ◽  
pp. 372-377
Author(s):  
Vivek Garg ◽  
Brajendra S. Sengar ◽  
Vishnu Awasthi ◽  
Amitesh Kumar ◽  
Sushil K. Pandey ◽  
...  

Author(s):  
L.J. Chen ◽  
Y.F. Hsieh

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.


Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.


Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


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