Orientation in large-area semiconducting 2-amino-anthracene thin films fabricated by dynamic floating film transfer method

In this study, we have investigated the surface analysis and optoelectronic properties on the synthesis of N-CNT/TiO2 composites thin films, using sol gel method for a dye synthetized solar cell (DSSC) which is found to be simple and economical route. The titanium dioxide based solar cells are an exciting photovoltaic candidate; they are promising for the realization of large area devices. That can be synthetized by room temperature solution processing, with high photoactive performance. In the present work, we stated comparable efficiencies by directing our investigation on obtaining Sol Gel thin films based on N-CNT/TiO2, by dispersing nitrogen (N) doped carbon nanotubes (N-CNTs) powders in titanium tetraisopropoxyde (TTIP). The samples were assessed in terms of optical properties, using UV—visible absorption spectroscopic techniques. After careful analysis of the results, we have concluded that the mentioned route is good and more efficient in terms of optoelectronic properties. The gap of “the neat” 0.00w% N-CNT/TiO2 is of 3eV, which is in a good agreement with similar gap of semiconductors. The incorporated “w%NCNTs” led to diminishing the Eg with increasing N-CNTs amount. These consequences are very encouraging for optoelectronic field.

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Strong texture tuning along different crystalline directions in glass-supported CeO2 thin films by ultrasonic spray pyrolysis

Scientific Reports ◽

10.1038/s41598-021-81353-x ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Inti Zumeta-Dubé ◽

José Manuel García Rangel ◽

Jorge Roque ◽

Issis Claudette Romero-Ibarra ◽

Mario Fidel García Sánchez

Keyword(s):

Thin Films ◽

Spray Pyrolysis ◽

Spray Pyrolysis Technique ◽

Morphological Characteristics ◽

Ultrasonic Spray Pyrolysis ◽

Cost Effective ◽

Growth Direction ◽

Large Area ◽

Smart Windows ◽

Ultrasonic Spray

AbstractThe strong facet-dependent performance of glass-supported CeO2 thin films in different applications (catalysis, smart windows, etc.) has been the target of diverse fundamental and technological approaches. However, the design of accurate, cost-effective and scalable methods with the potential for large-area coverage that produce highly textured glass-supported CeO2 thin films remains a technological challenge. In the present work, it is demonstrated that under proper tuning conditions, the ultrasonic spray pyrolysis technique enables one to obtain glass-supported polycrystalline CeO2 films with noticeable texture along both the (100) and (111) directions, as well as with randomly oriented crystallites (no texture). The influence of flow rates, solution molarity, and substrate temperature on the texture and morphological characteristics, as well as optical absorption and Raman response of the deposited films, is evaluated. The obtained results are discussed on the basis of the combined dependence of the CeO2-exposed surfaces on the thermodynamic stability of the corresponding facets and the reaction kinetics, which modulate the crystallite growth direction.

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The Growth of Semiconductor Thin Films Studied by RHEED

Australian Journal of Physics ◽

10.1071/ph900583 ◽

1990 ◽

Vol 43 (5) ◽

pp. 583

Author(s):

GL Price

Keyword(s):

Thin Films ◽

Surface Science ◽

High Vacuum ◽

High Energy ◽

Ultra High Vacuum ◽

Large Area ◽

Growth Modes ◽

Semiconductor Thin Films ◽

Wide Range ◽

Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

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