Growth of Cubic SiC Thin Films on Silicon from Single Source Precursors by Supersonic Jet Epitaxy

1996 ◽  
Vol 441 ◽  
Author(s):  
Jin-Hyo Boo ◽  
Scott A. Ustin ◽  
Wilson Ho ◽  
H. Paul Maruska ◽  
Peter E. Norris ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Supersonic Jet ◽  
Silicon On Insulator ◽  
X Ray Diffraction ◽  
Molecular Precursors ◽  
Transmission Electron ◽  
Supersonic Jet Epitaxy ◽  
Soi Substrates

AbstractCubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780 - 1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH3)2CHSiH(CH3)2, and diethylmethylsilane, (CH3CH2)2SiHCH3. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Classification of the Modes of Dissociation in Immiscible Cu-Alloy Thin Films

1999 ◽  
Vol 564 ◽  
Author(s):  
K. Barmak ◽  
G. A. Lucadamo ◽  
C. Cabral ◽  
C. Lavoie ◽  
J. M. E. Harper
Keyword(s):  
Thin Films ◽  
Driving Forces ◽  
Texture Evolution ◽  
Substantial Reduction ◽  
Alloying Elements ◽  
X Ray Diffraction ◽  
Cu Alloy ◽  
Transmission Electron ◽  
Evolution Of Microstructure

AbstractWe have found the dissociation behavior of immiscible Cu-alloy thin films to fall into three broad categories that correlate most closely with the form of the Cu-rich end of the binary alloy phase diagrams. The motivation for these studies was to use the energy released by the dissociation of an immiscible alloy, in addition to other driving forces commonly found in thin films and lines, to promote grain growth and texture evolution. In this work, the dissociation behavior of eight dilute (3.3 ± 0.5 at% solute) binary Cu-systems was investigated, with five alloying elements selected from group VB and VIB, two from group VillA, and one from group 1B. These alloying elements are respectively V, Nb, Ta, Cr, Mo, Fe, Ru and Ag. Several experimental techniques, including in situ resistance and stress measurements as well as in situ synchrotron x-ray diffraction, were used to follow the progress of solute precipitation in approximately 500 nm thick films. In addition, transmission electron microscopy was used to investigate the evolution of microstructure of Cu(Ta) and Cu(Ag). For all eight alloys, dissociation occurred upon heating, with the rejection of solute and evolution of microstructure and texture often occurring in multiple steps that range over several hundred degrees between approximately 100 and 900°C. However, in most cases, substantial reduction in resistivity of the films took place at temperatures of interest to metallization schemes, namely below 400°C.

Large Area Supersonic Jet Epitaxy of AlN, GaN, and SiC on Silicon

1996 ◽  
Vol 449 ◽  
Author(s):  
L.J. Lauhon ◽  
S. A. Ustin ◽  
W. Ho
Keyword(s):  
Supersonic Jet ◽  
X Ray Diffraction ◽  
Large Area ◽  
Free Jets ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Supersonic Jet Epitaxy ◽  
Carrier Gases

ABSTRACTAlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

scholarly journals Donald William Pashley. 21 April 1927 — 16 May 2009

2010 ◽  
Vol 56 ◽  
pp. 317-340 ◽  
Author(s):  
Bruce A. Joyce ◽  
Michael J. Stowell
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Film Growth ◽  
Epitaxial Thin Films ◽  
Disorder Effects ◽  
Transmission Electron ◽  
Innovative Materials ◽  
Low Dimensional

Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investigations, work that contributed enormously to our understanding of film growth processes. He pioneered the use of moiré patterns to reveal dislocations and other defects. He also made important contributions to long-range disorder effects on semiconductor surfaces and to the structure of low-dimensional semiconductor systems.

Nanostructured Silicon thin films Deposited by PECVD in the Presence of Silicon Nanoparticles

1997 ◽  
Vol 467 ◽  
Author(s):  
G. Viera ◽  
P. Roca i Cabarrocas ◽  
S. Hamma ◽  
S. N. Sharma ◽  
J. Costa ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nanoparticles ◽  
Film Growth ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Silicon Matrix ◽  
Silicon Thin Films ◽  
Nanostructured Silicon ◽  
Transmission Electron

ABSTRACTNanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 °C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1–2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

Single Crystal Gallium Nitride on Silicon Using SiC as an Intermediate Layer

1997 ◽  
Vol 482 ◽  
Author(s):  
S. A. Ustin ◽  
W. Ho
Keyword(s):  
Supersonic Jet ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Rocking Curve ◽  
Intermediate Layers ◽  
Transmission Electron ◽  
Single Source Precursor ◽  
Supersonic Jet Epitaxy

AbstractGaN films have been grown atop SiC intermediate layers on Si(001) and Si(111) substrates using supersonic jet epitaxy (SJE). GaN growth temperatures ranged between 600 °C and 775 °C. Methylsilane (H3SiCH3) was used as the single source precursor for SiC growth and triethylgallium (TEG) and ammonia (NH 3) were the sources for GaN epitaxy. The GaN growth rate was found to depend strongly on substrate orientation, growth temperature, and flux. Structural characterization of the films was done by transmission electron diffraction (TED) and x-ray diffraction (XRD). Growth of GaN on SiC(002) produces a cubic or mixed phase of cubic and wurtzite depending on growth conditions. Growth on SiC(111) produces predominantly wurtzite GaN(0002). Minimum rocking curve widths for GaN(0002) on SiC/Si(111) and GaN(002) on SiC/Si(001) are 0.6° and 1.5°, respectively. Cross Sectional Transmission Electron Microscopy (XTEM) was also performed.

scholarly journals X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

2013 ◽  
Vol 46 (4) ◽  
pp. 868-873 ◽  
Author(s):  
Peter Zaumseil ◽  
Grzegorz Kozlowski ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Thomas Schroeder
Keyword(s):  
Tensile Strain ◽  
Chemical Vapour ◽  
Grazing Incidence ◽  
Silicon On Insulator ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Soi Substrates ◽  
Nanostructured Si

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

Microstructures of Cu- and Y-rich YBa2Cu3O7−x thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 38-39
Author(s):  
A.F. Marshall
Keyword(s):  
Thin Films ◽  
Critical Currents ◽  
Electron Beam Evaporation ◽  
Second Phase ◽  
X Ray Diffraction ◽  
Transmission Electron Microscopy Analysis ◽  
Transmission Electron ◽  
Electron Microscopy Analysis ◽  
Defect Microstructure

The defect microstructure of Cu- and Y-rich thin films of the high Tc superconductor YBa2Cu3O7−x (123) is of interest for several reasons. The highest Tc' reported for well-ordered stoichiometric films are typically 90-91 K. Post-annealed Cu- and Y-rich films may exhibit Tc's of 95-96 K. X-ray diffraction showed these non-stoichiometric films to be a highly faulted mixture of the 123 and 248 (Y2Ba4Cu8O16,Tc=80 K) phases. In situ films made by sputtering or electron beam evaporation typically show sharp but depressed Tc's (75-85 K); for our films these values approach 90 K when the films are Cu- and Y-rich. Both post annealed and in situ films exhibit high critical currents on and off stoichiometry; the pinning characteristics, which may be highly influenced by the defect microstructure, are superior for the in situ techniques.Transmission electron microscopy analysis shows that excess Cu and Y can be incorporated both as stacking fault (SF) defects and as second phase precipitates.

Atomic Layer Deposition of thin Films Using Sequential Surface Reactions

2000 ◽  
Vol 616 ◽  
Author(s):  
S. M. George ◽  
J.D. Ferguson ◽  
J.W. Klaus
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Single Element ◽  
Transmission Electron ◽  
Layer Deposition

AbstractThin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.

Role of Ag in the Epitaxial Growth of Oxide Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
Clinton B. Lee ◽  
D. Kumar ◽  
Rajiv K. Singh ◽  
Derrick Mathis ◽  
Donovan Moxey
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Optical Emission ◽  
X Ray Diffraction ◽  
Additional Source ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Emission Studies

ABSTRACTIn this paper, we have reported our investigations related to the growth of high temperature superconducting YBa2Cu3O7-δ (YBCO) and colossal magnetoresistive La0.7MnxO3-δ (LMO) thin films in presence of silver. The films were grown using pulsed laser deposition (PLD) techniques and characterized using x-ray diffraction, scanning electron microscopy, Squid magnetometer. The focus of our work is on the realization of significant improvement in microstructural and physical properties of these films by the addition of a common material (silver) to the films during their in-situ formation. Optical emission studies of plumes emanating from Ag target have been carried out to find the role of Ag acting as additional source of oxygen-supply to oxide lattices during film-growth.

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