An overview to integrated power module design for high power electronics packaging

2000 ◽  
Vol 40 (3) ◽  
pp. 365-379 ◽  
Author(s):  
A.B. Lostetter ◽  
F. Barlow ◽  
A. Elshabini
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Electronics Packaging ◽  
Power Module ◽  
Module Design

Die-Attach Bonding with Etched Micro Brass Metal Pigment Flakes for High-Power Electronics Packaging

2021 ◽  
Author(s):  
Sri Krishna Bhogaraju ◽  
Hiren R. Kotadia ◽  
Fosca Conti ◽  
Armin Mauser ◽  
Thomas Rubenbauer ◽  
...  
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Electronics Packaging ◽  
Die Attach

Thermal Decoupling in Power Electronics Modules Using Thermal Pyrolytic Graphite

2019 ◽  
Vol 2019 (1) ◽  
pp. 000183-000187
Author(s):  
Riya Paul ◽  
Amol Deshpande ◽  
Fang Luo
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Heat Dissipation ◽  
Pyrolytic Graphite ◽  
High Density ◽  
Junction Temperature ◽  
Heat Extraction ◽  
Maximum Temperature ◽  
Thermal Coupling ◽  
Power Module

Abstract The device within a power electronics module package will fail if the maximum junction temperature is not within the device's permissible maximum temperature rating specified by the manufacturer. Modern electronic miniaturization demands multi-chip module (MCM) packaging providing different semiconductor technology integration, reduced number of component interconnects, and lower power supply. But the huge amount of heat generated by each chip produces thermal coupling among devices, leading to an increase in the junction temperature. The power device specifications in the datasheet assume the devices being mounted on a suitable heatsink. Wide bandgap (WBG) devices like silicon carbide (SiC) devices can generally sustain a maximum junction temperature of about 175 °C – 200 °C. The junction temperature of the WBG devices becomes severe in a high-density high-power module. This highlights the need for a thermal management system to limit the maximum junction temperature within the device's permissible range. As a result, the power module needs to be connected to a heatsink to effectively increase the surface area of the heat dissipation junctions. A high conductivity material based heatsink extracts heat effectively from the module as the thermal resistance value remains low. In this paper, preliminary thermal analysis is done for a high density high-power module where the high in-plane thermal conductivity of thermal pyrolytic graphite (TPG) is exploited in substrate as well as heatsink designs. TPG brings down the junction temperature to a considerably lower level, leading to a safer power module functioning. This paper focuses on the design and proper alignment of the substrate and heatsink with respect to the module layout so that maximum junction temperature is reduced by proper heat extraction far below the operating temperature of the devices and also extent of reduction of the thermal coupling among the power devices placed next to each other on the same plane within the power module.

Embedded Power Modules – A new approach using Power Core and High Power PCB

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000906-000937 ◽  
Author(s):  
Lars Boettcher ◽  
Lars Boettcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
A. Ostmann
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Electronics Packaging ◽  
Switching Frequency ◽  
Automotive Applications ◽  
New Approach ◽  
Power Semiconductors ◽  
Power Modules ◽  
Bond Wires ◽  
Embedded Power

Power electronics packaging applications has strong demands regarding reliability and cost. The fields of developments reach from low power converter modules, over single or multichip MOSFET or IGBT packages, up to high power applications, like needed e.g. for solar inverters and automotive applications. This paper will give an overview about these applications and a description of each ones demand. The spectrum of conventional power electronics packaging reaches from SMD packages for power chips to large power modules. In most of these packages the power semiconductors are connected by bond wires, resulting in large resistances and parasitic inductance. Additionally bond wires result in a high stray inductance which limits the switching frequency. The embedding of chips using Printed Circuit Board (PCB) technology offers a solution for many of the problems in power packaging. This paper will show today's available power packages and power modules, realized in industrial production as well as in European research projects. All technologies which are used are based on PCB materials and processes. Chips are mounted to Cu foils, lead frames, high power PCBs or even ceramic substrates, embedded by vacuum lamination of laminate sheets and electrically connected by laser drilling and Cu plating. A new approach for embedded power modules will be presented in detail. In this project, different application fields are covered, ranging from 50 W over 500 W to 50kW power modules for different applications like single chip packages, over power control units for pedelec (Pedal Electric Cycle), to inverter modules for automotive applications. This approach will focus on a power core base structure for the embedded semiconductor, which is then connected to a high power PCB. The connection to the embedded die is realized by direct copper connection only. The technology principle will be described in detail. Frist manufactured demonstrators will be presented. The presented new approach for the realization of a power core structure offers new possibilities for the module manufacturing, avoiding soldering or Ag sintering of the power semiconductors and the handling of thick copper substrates during the embedding process.

Comparative Study on Power Module Architectures for Modularity and Scalability

2019 ◽  
Author(s):  
Mei-Chien Lu
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Electric Vehicles ◽  
Hybrid Electric Vehicle ◽  
Department Of Energy ◽  
Power Module ◽  
Module Design ◽  
Power Modules ◽  
Hybrid Electric ◽  
Silicon Based

Abstract Silicon carbide wide bandgap power electronics have gained application spaces in hybrid electric vehicle and electrical vehicles. The Department of Energy has set target performance goals for 2025 to promote electric vehicles and hybrid electric vehicles as a means of carbon emission reduction and long term sustainability. Silicon carbide technology is well suited to reach these goals. Challenges include higher expectations on power density, performance, efficiency, thermal management, compactness, cost, and reliability. This study will benchmark state of the art silicon and silicon carbide technologies. Power modules of commercial traction inverters are analyzed for their within-package interconnect scheme, module architecture, and cooling methods. A few power module package architectures from both industry adopted standards and proposed patented technologies are compared for modularity and scalability for integration into inverters. The within package interconnect schemes are crucial elements to support power module design. Current trends of power module architectures and their integration into inverter are discussed. The development of an eco-system to support the transition from silicon-based to silicon carbide-based power electronics is additionally discussed as an ongoing challenge.

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