Synthesis of stoichiometric titania films by oxygen ion assistance of growing titanium

1997 ◽  
Vol 91 (3) ◽  
pp. 153-157 ◽  
Author(s):  
A. Rizzo ◽  
L. Mirenghi ◽  
A. Quirini ◽  
S. Scaglione
Keyword(s):  
Oxygen Ion ◽  
Titania Films ◽  
Ion Assistance

Mechanical and Optical Properties of The Films of Tantalum Oxide Deposited by Ion-Assisted Deposition

1993 ◽  
Vol 308 ◽  
Author(s):  
PJ. Martin ◽  
A. Bendavid ◽  
M.V. Swain ◽  
R.P. Netterfield ◽  
T.J. Kinder ◽  
...  
Keyword(s):  
Optical Properties ◽  
Tantalum Oxide ◽  
Ion Bombardment ◽  
Electron Beam Evaporation ◽  
Glass Substrates ◽  
Oxygen Ion ◽  
Film Hardness ◽  
Ion Assistance ◽  
Micro Indentation ◽  
Hardness Values

ABSTRACTThin films of tantalum oxide 1 μm thick were deposited by oxygen ion-assisted electron-beam evaporation onto silicon and glass substrates. The packing density and optical properties of the films were controlled by the degree of ion assistance during growth. The films were characterized for hardness by ultra-micro indentation measurement and density by RBS. A strong correlation of hardness, and optical properties was found with the ion-to-vapor arrival ratio at the substrate during deposition. Evaporated films without ion assistance were found to be relatively soft with hardness values of 5.3 GPa and 6.5 GPa on glass and silicon respectively when measured with a Berkovich indenter. When the ion bombardment was increased the film hardness increased to a maximum hardness of 10 GPa for 1000 eV O2 ion bombardment. The measured microhardness of the films was found to be influenced by the nature of the substrate for all depositions with higher microhardness values being recorded for films deposited onto silicon. The films were found to be amorphous and homogeneous. Additional ultra-microhardness measurements with a spherical tipped indenter enabled the depth dependence of hardness and modulus to be determined.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

scholarly journals Fast oxygen ion migration in Cu–In–oxide bulk and its utilization for effective CO2 conversion at lower temperature

2021 ◽  
Author(s):  
Jun-Ichiro Makiura ◽  
Takuma Higo ◽  
Yutaro Kurosawa ◽  
Kota Murakami ◽  
Shuhei Ogo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Water Gas Shift ◽  
Chemical Looping ◽  
Co2 Conversion ◽  
Ion Migration ◽  
Oxygen Ion ◽  
Reverse Water Gas Shift ◽  
Oxygen Ion Migration ◽  
Lower Temperature ◽  
Water Gas

Efficient activation of CO2 at low temperature was achieved by reverse water–gas shift via chemical looping (RWGS-CL) by virtue of fast oxygen ion migration in a Cu–In structured oxide, even at lower temperatures.

Assembly of thin mesoporous titania films and their effects on the voltammetry of weakly adsorbing redox systems

2005 ◽  
Vol 579 (2) ◽  
pp. 267-275 ◽  
Author(s):  
Katy J. McKenzie ◽  
Pauline M. King ◽  
Frank Marken ◽  
Catherine E. Gardner ◽  
Julie V. Macpherson
Keyword(s):  
Mesoporous Titania ◽  
Redox Systems ◽  
Titania Films

scholarly journals Transport and Electromechanical Properties of Ca3TaGa3Si2O14 Piezoelectric Crystals at Extreme Temperatures

MRS Advances ◽  
2019 ◽  
Vol 4 (09) ◽  
pp. 515-521
Author(s):  
Yuriy Suhak ◽  
Ward L. Johnson ◽  
Andrei Sotnikov ◽  
Hagen Schmidt ◽  
Holger Fritze
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Tone Burst ◽  
Total Conductivity ◽  
Transport Mechanisms ◽  
Electromechanical Properties ◽  
Self Diffusion ◽  
Oxygen Ion ◽  
Piezoelectric Strain ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTTransport mechanisms in structurally ordered piezoelectric Ca3TaGa3Si2O14 (CTGS) single crystals are studied in the temperature range of 1000-1300 °C by application of the isotope 18O as a tracer and subsequent analysis of diffusion profiles of this isotope using secondary ion mass spectrometry (SIMS). Determined oxygen self-diffusion coefficients enable calculation of oxygen ion contribution to the total conductivity, which is shown to be small. Since very low contributions of the cations have to be expected, the total conductivity must be dominated by electron transport. Ion and electron conductivities are governed by different mechanisms with activation energies (1.9±0.1) eV and (1.2±0.07) eV, respectively. Further, the electromechanical losses are studied as a function of temperature by means of impedance spectroscopy on samples with electrodes and a contactless tone-burst excitation technique. At temperatures above 650 °C the conductivity-related losses are dominant. Finally, the operation of CTGS resonators is demonstrated at cryogenic temperatures and materials piezoelectric strain constants are determined from 4.2 K to room temperature.

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