Design of an L1 band low noise single-chip GPS receiver in 0.18 μ m CMOS technology

Author(s):  
Ying-mei CHEN ◽  
Zhi-qun LI ◽  
Zhi-gong WANG ◽  
Yong-kang JING ◽  
Li ZHANG
2015 ◽  
Vol 24 (03) ◽  
pp. 1550036 ◽  
Author(s):  
Zhengfei Hu ◽  
Li Zhang ◽  
Mindi Huang

An L1 band highly integrated low noise GPS receiver in 0.18-μm CMOS is presented in this paper. The receiver adopts double conversion structure and two dynamic range control modes of variable gain amplifier (VGA) and programmable gain amplifier (PGA). The receiver includes the blocks of LNA, down-conversion mixers, band pass filter, received signal strength indicator (RSSI), VGA, PGA, 2-bit ADC, two frequency synthesizers and so on. The LNA adopts source inductive degeneration technique to achieve good noise performance, and a novel positive feedback capacitor is introduced to enhance gain. The novel gain-boosting charge pump (CP) structure acquires accurate current matching of 0.1% error which improves the output phase noise of frequency synthesizer. The measured radio performances of noise figure (NF) is only 4 dB and the maximum gain is 110 dB. The gain control range achieves 50 dB provided by PGA and VGA. The receiver occupies an area of 1.875 mm × 1.575 mm including all needed voltage reference and the 1.8 V low dropout regulator.


2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.


2009 ◽  
Vol 18 (03) ◽  
pp. 487-495 ◽  
Author(s):  
VINCENZO STORNELLI ◽  
GIUSEPPE FERRI ◽  
KING PACE

This work presents a single chip integrated pulse generator-modulator to be utilized in a short range wireless radio sensors remote control applications. The circuit, which can generate single pulses, modulated in BPSK, OOK, PAM, and also PPM, has been developed in a standard CMOS technology (AMS 0.35 μm). Typical pulse duration is about 1 ns while pulse repetition frequency is until 200 MHz (5 ns "chip" time). The operating supply voltage is ± 2.5 V, while the whole power consumption is about 15 mW. Post-layout parametric and corner analyses have confirmed the theoretical expectations.


2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.


2021 ◽  
Author(s):  
Matthew Al Disi ◽  
Alireza Mohammad Zaki ◽  
Qinwen Fan ◽  
Stoyan Nihtianov

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  


2017 ◽  
Vol 7 (1.3) ◽  
pp. 69
Author(s):  
M. Ramana Reddy ◽  
N.S Murthy Sharma ◽  
P. Chandra Sekhar

The proposed work shows an innovative designing in TSMC 130nm CMOS technology. A 2.4 GHz common gate topology low noise amplifier (LNA) using an active inductor to attain the low power consumption and to get the small chip size in layout design. By using this Common gate topology achieves the noise figure of 4dB, Forward gain (S21) parameter of 14.7dB, and the small chip size of 0.26 mm, while 0.8mW power consuming from a 1.1V in 130nm CMOS gives the better noise figure and improved the overall performance.


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