Chromium deposition by sputtering

Author(s):  
R. C. Specht ◽  
G. J. Lutz

Previous works have shown the benefits of depositing ultrathin films (0.5-3.0 nm) of chromium onto SEM specimens to permit improved resolution at higher magnification. The finer grain structure of the chromium permits closer replication of the specimen surface topography than is possible with the conventional 10 nm of gold. This paper presents the results of an ongoing program at Denton Vacuum to develop guidelines for successful, repeatable deposition of ultrathin chromium films by sputtering.Chromium can be deposited using a high vacuum evaporator by either evaporation of chips from baskets or sputtering. Sputtering is the more desirable method since it has the potential for better rate control, coverage, repeatability and least specimen exposure to radiant heat.

Author(s):  
Klaus-Ruediger Peters

Only recently it became possible to expand scanning electron microscopy to low vacuum and atmospheric pressure through the introduction of several new technologies. In principle, only the specimen is provided with a controlled gaseous environment while the optical microscope column is kept at high vacuum. In the specimen chamber, the gas can generate new interactions with i) the probe electrons, ii) the specimen surface, and iii) the specimen-specific signal electrons. The results of these interactions yield new information about specimen surfaces not accessible to conventional high vacuum SEM. Several microscope types are available differing from each other by the maximum available gas pressure and the types of signals which can be used for investigation of specimen properties.Electrical non-conductors can be easily imaged despite charge accumulations at and beneath their surface. At high gas pressures between 10-2 and 2 torr, gas molecules are ionized in the electrical field between the specimen surface and the surrounding microscope parts through signal electrons and, to a certain extent, probe electrons. The gas provides a stable ion flux for a surface charge equalization if sufficient gas ions are provided.


2000 ◽  
Vol 14 (25n27) ◽  
pp. 3145-3152 ◽  
Author(s):  
E. VILLA ◽  
A. TUISSI ◽  
R. TOMOV ◽  
J. E. EVETTS

For the production of HTS coated conductor devices, NiV and NiCr (Ni-based alloys) are the most important, non-magnetic, high strength and biaxially textured substrates developed from pure Ni. The Ni 88 V 12 and Ni 85 Cr 15 (at. %) alloys have been melted in Plasma Arc Furnace and textured tapes have been prepared, after heavy cold rolling, by recrystallization heat treatment under high vacuum. The suitable working conditions have been found to obtain not only the {100} <001> cube texture but also the correct grain shape and size for the following deposition process. Out of plane orientation of these substrates has been investigated by θ-2θ X-ray diffraction measurements and in plane orientation study has been completed by pole figures. The microstructure has been observed by optical microscopy: it has been carried out on samples obtained after an annealing treatment (Grain Size Adjustment) and on recrystallized samples in different conditions. As preliminary mechanical investigation the microhardness values have been detected for each step of the working procedure. The accuracy of the cubic texture and the grain structure are affected by the processing condition, in particular the temperature of the GSA seems a very important parameter which influences the final characteristics of the tapes.


Author(s):  
R.M. Fisher ◽  
J.Z. Duan ◽  
Crispin J. Hetherington ◽  
Norman Fowler

The resistance of deposited thin films to cracking or delamination from substrates during production or service, crucial to the long term reliability of IC devices, is under study as part of a broad program on interfacial bonding and adhesion. Chromium films, of particular interest because of their widespread use in microelectronics, are especially prone to mechanical failure due to the high residual stresses that are generally present and their low fracture toughness. Transmission and scanning electron microscopy are being used to define the columnar grain structure and failure modes and x-ray diffraction is being employed to determine the nature of through-thickness stress gradients that occur in such films.The intrinsic stress, as distinguished from the extrinsic stress caused by differential contraction between film and substrate during cooling from the deposition temperature, results from the presence of vacancies and diffuse “voids” trapped between the columns during deposition. Transmission electron microscopy of plan-view and cross-sections is being used in efforts to observe and define the structure of the inter-columnar regions.


1990 ◽  
Vol 202 ◽  
Author(s):  
M.A. Lawn ◽  
R.G. Elliman ◽  
M.C. Ridgway ◽  
R. Leckey ◽  
J.D. Riley

ABSTRACTA study of the growth of thin Ir silicide films on (111)Si substrates has been undertaken. Thin (2.0nm) ir films deposited onto Si substrates under ultra-high vacuum conditions have been observed to display remarkable film continuity and fine grain structure (lnm). In situ annealing at 1000°C resulted in the formation of large regions (>10µm) of epitaxial IrSi3 islands (∼1µm) with identical epitaxial orientations. By means of annealing an as-deposited (2.0nm) Ir film stepwise to 1000°C within a transmission electron microscope the evolution of Ir silicide phases and morphologies were observed. The epitaxial growth of the semiconducting IrSi1.75 phase is reported along with the formation of Ir silicide islands at temperatures between 700°C and 800°C.


2011 ◽  
Vol 1344 ◽  
Author(s):  
Cécile Delacour ◽  
Luc Ortega ◽  
Bernard Pannetier ◽  
Vincent Bouchiat

ABSTRACTWe report on a combined structural and electronic analysis of niobium ultrathin films (from 2.5 to 10 nm) epitaxially grown in ultra-high vacuum on atomically flat sapphire wafers. We demonstrate a structural transition in the early stages of Nb growth, which coincides with the onset of a superconducting-metallic transition (SMT). The SMT takes place on a very narrow thickness range (1 ML). The thinnest superconducting sample (3 nm/ 9ML) has an offset critical temperature above 4.2K and allows to be processed by standard nanofabrication techniques to generate air and time stable superconducting nanostructures.


2018 ◽  
Vol 6 (33) ◽  
pp. 8885-8889 ◽  
Author(s):  
Matteo Atzori ◽  
Lorenzo Poggini ◽  
Lorenzo Squillantini ◽  
Brunetto Cortigiani ◽  
Mathieu Gonidec ◽  
...  

Herein, we report the identification of a novel high-vacuum processable spin-crossover complex which can be efficiently used to prepare continuous ultrathin films with retention of switchable magnetic properties.


2001 ◽  
Vol 711 ◽  
Author(s):  
Timothy M. Fulghum ◽  
Hiroyuki Yamagami ◽  
Kuniaki Tanaka ◽  
Hiroaki Usui ◽  
Kiyotaka Shigehara ◽  
...  

ABSTRACTPolypeptide ultrathin films covalently grafted on solid substrates have attracted considerable attention in the interfacial polymer science community over the past couple of years. The potential applications of these films ranges from applications in liquid crystal displays, biosensors, optical devices, etc.. Their study may address important biocompatibility issues. We have synthesized polypeptide ultrathin films through the use of the physical vapor deposition technique. We expect to gain better insight into the polymerization process of the NCA monomers, as well as, possible control of the secondary structure.Through use of the vapor deposition technique and the amino acid n-carboxy anhydride (NCA) benzyl serine we have been able to prepare polymeric amino acids for analysis. Benzyl serine NCA was evaporated in high vacuum at a temperature of 95-130°C. Different substrates have been used to examine the effects of chemical binding sites on polymerization and secondary structure formation. From IR-spectroscopy and optical microscopy it was evident that without a free amine initiator on the surface of the substrate, polymerization would not occur. Analysis of the films with IR and optical microscopy were used to determine optimum deposition and polymerization conditions. The methyl peak around 3000 cm-1, amide peak at 1650 cm-1 and the carbonyl stretching at 1750 cm-1 evidence of the monomer are greatly reduced or disappear in the deposition range of 40-100nm/min.Analysis of the films with attenuated total reflectance (ATR) Infrared spectroscopy was used to examine the secondary structure. Values of amide 1 peak at 1632 cm-1, representing the carbonyl stretching, and the peak at 1530 cm-1, representing the carbon nitrogen stretching, match with literature values of beta sheet conformation.


1993 ◽  
Vol 318 ◽  
Author(s):  
George O. Ramseyer ◽  
Joseph V. Beasock ◽  
William K. Sylla ◽  
Lois H. Walsh

ABSTRACTThermal and electromigration effects on the thicknesses of aluminum oxide at the aluminum-1% silicon/thermal silicon dioxide interface were quantitatively determined by AES. Void sites corresponded with thinner aluminum oxide thicknesses at this interface. Changes in surface topography and grain structure were quantitatively determined for thermally annealed aluminum-1% silicon metallizations by AFM.


2020 ◽  
Vol 854 ◽  
pp. 140-147
Author(s):  
Vladimir N. Malikov ◽  
Alexey V. Ishkov ◽  
Alexey A. Grigorev ◽  
Denis A. Fadeev ◽  
Mihail A. Ryasnoi

The article describes the results of studies of Ni-Al ultrathin films obtained by the resistive thermal evaporation method and having the characteristic dimensions of islands of 700-1000 nm with a film thickness of about 500 nm. This paper presents a method of obtaining a film using a unit for creating high vacuum and the subsequent deposition of the film. The obtained film sample was studied using an optical microscope, a scanning probe microscope and a Fourier analyzer. The kinetic characteristics of the film, the film relief, and the characteristic dimensions of the islands were established; the search for regularities in the island structure of films was carried out and its electrical conductivity was determined.


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