Electronic Structure Investigations of γ-Tial.

1997 ◽  
Vol 3 (S2) ◽  
pp. 995-996
Author(s):  
K. Lie ◽  
R. Holmestad ◽  
K. Marthinsen ◽  
R. Høier
Keyword(s):  
Electronic Structure ◽  
High Stress ◽  
Mean Free Path ◽  
Edge Structure ◽  
Transmission Electron ◽  
Nominal Voltage ◽  
Lower Temperature ◽  
Convergent Beam ◽  
Structure Investigations ◽  
Inelastic Mean Free Path

The intermetallic compound TiAl is a promising material for applications at high stress and high temperature. It has good balance between lightness, strength and oxidation resistance, but suffers of an intrinsic brittleness at lower temperature. Small, ternary additions of V, Cr or Mn are known to increase the ductility of this material. In the present and a recent study we have used electron energy loss spectroscopy as a sensitive test to investigate the electronic structure in these materials. The near edge structure (NES) may give complementary information to e.g. convergent beam electron diffraction (CBED) about the bonding character in these materials.EELS spectra were collected using a Gatan 666 spectrometer with parallel recording fitted to a Philips CM 30 transmission electron microscope operating at a nominal voltage of 150 kV. The energy resolution (measured as full width at half maximum) was typically around 1 eV. Spectra from areas of similar thickness, as measured relative to the total inelastic mean free path of the 150-keV electrons were obtained.

Quantitative energy-filtered tem imaging of interfaces

1996 ◽  
Vol 54 ◽  
pp. 542-543 ◽  
Author(s):  
J. Bentley ◽  
E. A. Kenik ◽  
K. Siangchaew ◽  
M. Libera
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Unit Volume ◽  
Core Loss ◽  
Mean Free Path ◽  
Slit Width ◽  
Elemental Mapping ◽  
Low Loss ◽  
Transmission Electron ◽  
Inelastic Mean Free Path

Quantitative elemental mapping by inner shell core-loss energy-filtered transmission electron microscopy (TEM) with a Gatan Imaging Filter (GIF) interfaced to a Philips CM30 TEM operated with a LaB6 filament at 300 kV has been applied to interfaces in a range of materials. Typically, 15s exposures, slit width Δ = 30 eV, TEM magnifications ∼2000 to 5000×, and probe currents ≥200 nA, were used. Net core-loss maps were produced by AE−r background extrapolation from two pre-edge windows. Zero-loss I0 (Δ ≈ 5 eV) and “total” intensity IT (unfiltered, no slit) images were used to produce maps of t/λ = ln(IT/I0), where λ is the total inelastic mean free path. Core-loss images were corrected for diffraction contrast by normalization with low-loss images recorded with the same slit width, and for changes in thickness by normalization with t/λ, maps. Such corrected images have intensities proportional to the concentration in atoms per unit volume. Jump-ratio images (post-edge divided by pre-edge) were also produced. Spectrum lines across planar interfaces were recorded with TEM illumination by operating the GIF in the spectroscopy mode with an area-selecting slit oriented normal to the energy-dispersion direction. Planar interfaces were oriented normal to the area-selecting slit with a specimen rotation holder.

Determination of the Inelastic Mean-Free-Path and Mean Inner Potential for AlAs and GaAs Using Off-Axis Electron Holography and Convergent Beam Electron Diffraction

2007 ◽  
Vol 13 (5) ◽  
pp. 329-335 ◽  
Author(s):  
Suk Chung ◽  
David J. Smith ◽  
Martha R. McCartney
Keyword(s):  
Electron Diffraction ◽  
Theoretical Calculations ◽  
Mean Free Path ◽  
High Energy ◽  
Convergent Beam Electron Diffraction ◽  
Electron Holography ◽  
Beam Electron ◽  
The Mean ◽  
Convergent Beam ◽  
Inelastic Mean Free Path

The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.

Investigations on electronic structure of YMnO3 by electron energy loss spectra and first-principle calculations

2019 ◽  
Vol 34 (4) ◽  
pp. 339-344
Author(s):  
S. Wang ◽  
J. Cai ◽  
H. D. Xu ◽  
H. L. Tao ◽  
Y. Cui ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Energy Loss ◽  
Experimental Spectrum ◽  
X Ray Diffraction ◽  
Edge Structure ◽  
Transmission Electron ◽  
The Individual ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra ◽  
Good Agreement

Crystal structure and electronic structure of YMnO3 were investigated by X-ray diffraction and transmission electron microscopy related techniques. According to the density of states (DOS), the individual interband transitions to energy loss peaks in the low energy loss spectrum were assigned. The hybridization of O 2p with Mn 3d and Y 4d analyzed by the partial DOS was critical to the ferroelectric nature of YMnO3. From the simulation of the energy loss near-edge structure, the fine structure of O K-edge was in good agreement with the experimental spectrum. The valence state of Mn (+3) in YMnO3 was determined by a comparison between experiment and calculations.

scholarly journals Degradation of Creep Resistant Ni - Alloy During Aging at Elevated Temperature Part II: Structure Investigations

2015 ◽  
Vol 15 (4) ◽  
pp. 45-50
Author(s):  
M. Kaczorowski ◽  
P. Skoczylas ◽  
A. Krzyńska
Keyword(s):  
Mechanical Properties ◽  
Cell Structure ◽  
High Stress ◽  
Dislocation Cell ◽  
Hydrogen Atmosphere ◽  
Structure Degradation ◽  
Transmission Electron ◽  
Δ Phase ◽  
Structure Investigations

Abstract The results of structure observations of Ni base superalloy subjected to long-term influence of high pressure hydrogen atmosphere at 750K and 850K are presented. The structure investigation were carried out using conventional light-, scanning- (SEM) and transmission electron microscopy (TEM). The results presented here are supplementary to the mechanical studies given in part I of this investigations. The results of study concerning mechanical properties degradation and structure observations show that the differences in mechanical properties of alloy subjected different temperature are caused by more advanced processes of structure degradation during long-term aging at 850K, compare to that at 750K. Higher service temperature leads to formation of large precipitates of δ phase. The nucleation and growth of needle- and/or plate-like, relative large delta precipitates proceed probably at expense strengthening γʺ phases. Moreover, it can’t be excluded that the least stable γʺ phase is replaced with more stable γʹ precipitates. TEM observations have disclosed differences in dislocation structure of alloy aged at 750K and 850K. The dislocation observed in alloy subjected to 750K are were seldom observed only, while in that serviced at high stress and 850K dislocation array and dislocation cell structure was typical.

Parameterization of the mean free path for inelastic scattering of fast electrons

1987 ◽  
Vol 45 ◽  
pp. 122-123
Author(s):  
R. F. Egerton ◽  
S. C. Cheng ◽  
T. Malis
Keyword(s):  
Energy Loss ◽  
Free Path ◽  
Mean Free Path ◽  
Fast Electrons ◽  
Before And After ◽  
The Mean ◽  
Convergent Beam ◽  
Inelastic Mean Free Path ◽  
Electron Energy Loss ◽  
Beam Diffraction

The areas, Iz and It, under the zero-loss peak and under the entire energy-loss spectrum (of a sample of thickness t) are related by the formula:t/ƛ(β) = ln (It/Iz) (1)where ƛ(β) is the inelastic mean free path for all energy losses and for scattering into the collection aperture, of semiangle β. We have used Eq.(l) to experimentally determine ƛ(β) by electron energy-loss spectroscopy of specimens of known composition and thickness. In the case of crystalline samples, the local thickness t was measured by convergent-beam diffraction. In the case of evaporated thin-film specimens, the average thickness was obtained by accurately weighing the substrate before and after deposition. The energy-loss spectroscopy was carried out in CTEM mode with incident energies Eo between 20keV and 120keV, and with collection semiangles in the range 0.2 mrad to 100 mrad.

Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination

2015 ◽  
Vol 21 (6) ◽  
pp. 1406-1412 ◽  
Author(s):  
Zhaofeng Gan ◽  
Michael DiNezza ◽  
Yong-Hang Zhang ◽  
David J. Smith ◽  
Martha R. McCartney
Keyword(s):  
Free Path ◽  
Incident Beam ◽  
Mean Free Path ◽  
Bloch Wave ◽  
Electron Holography ◽  
Phase Imaging ◽  
Phase Measurements ◽  
Specimen Orientation ◽  
Convergent Beam ◽  
Inelastic Mean Free Path

AbstractThe mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.

Electronic Structure Investigations of Metal / SrtiO3 Interfaces Using EELS

2001 ◽  
Vol 7 (S2) ◽  
pp. 304-305
Author(s):  
Klaus van Benthem ◽  
Christina Scheu ◽  
Wilfried Sigle ◽  
Christian Elsässer ◽  
Manfred Rühle
Keyword(s):  
Electronic Structure ◽  
Energy Loss ◽  
Electron Energy ◽  
Scanning Transmission Electron Microscope ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Analytical Microscopy ◽  
Structure Investigations ◽  
Electron Energy Loss

Ni, Pd and Cr thin films were grown on (100)SrTiO3 surfaces by molecular beam epitaxy at substrate temperatures of TNJ, pd=650°C and Tcr =150°C. Electron energy-loss spectroscopy (EELS) and high resolution transmission electron microscopy (HRTEM) were applied to investigate the local electronic structure and the atomic structure of the interfaces, respectively. Analytical microscopy was carried out with a parallel energy-loss spectrometer (PEELS766) attached to a dedicated scanning transmission electron microscope (STEM) operated at 100keV, which has a point resolution of 0.22 nm. HRTEM studies were performed on a Jeol JEM ARM 1250 operated at 1250keV (0.12 nm point resolution). Conventional TEM and HRTEM experiments showed epitaxial orientation relationships between the thin metal films and the substrate for each interface.The electronic structure of the interfaces in terms of the site- and symmetry projected density of states (PDOS) above the Fermi-level can be extracted from the electron energy-loss near-edge structures (ELNES).

Elemental Mapping of Co-Based Magnetic Recording Media: EFTEM and STEM Spectrum Imaging

2001 ◽  
Vol 7 (S2) ◽  
pp. 1140-1141
Author(s):  
J. Bentley ◽  
J.E. Wittig ◽  
J.F. Al-Sharab ◽  
N.D. Evans
Keyword(s):  
Magnetic Recording ◽  
Mean Free Path ◽  
Recording Media ◽  
Elemental Mapping ◽  
Magnetic Recording Media ◽  
Commercial Media ◽  
Transmission Electron ◽  
Spectrum Imaging ◽  
Data Acquisition And Processing ◽  
Inelastic Mean Free Path

The optimized performance of Co(CrTaPt) thin-film longitudinal magnetic recording media (for computer hard discs) depends critically on the grain size distribution and on intergranular Cr segregation that magnetically isolates the grains. These microstructural aspects of both model and commercial media have been extensively investigated at ∽1 nm resolution with quantitative elemental mapping by energy-filtered transmission electron microscopy (EFTEM) of Cr, Co, and O, but not Ta and Pt which unfortunately are not amenable to quantitative elemental mapping by EFTEM. Procedures for data acquisition and processing have been refined in order to provide robust methods for measuring intergranular compositions for statistically significant numbers of grains. Figure 1 shows results obtained with a Gatan imaging filter (GIF) interfaced to a LaB6 Philips CM30 for a carbon-capped 25-nm-thick film of Co80Cr16Ta4 grown on a Cr underlayer. Typical acquisition parameters have been described previously. to avoid the Cr underlayer, foil thicknesses t<0.2X are used, including the carbon overlayer (λ = inelastic mean free path ≌100 nm).

Prospects for convergent beam electron diffraction with a 200kV cold field-emission transmission electron microscope

1991 ◽  
Vol 49 ◽  
pp. 466-467
Author(s):  
J W Steeds ◽  
R Vincent
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Small Diameter ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Medium Voltage ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Special Modification ◽  
Convergent Beam

We review the analytical powers which will become more widely available as medium voltage (200-300kV) TEMs with facilities for CBED on a nanometre scale come onto the market. Of course, high performance cold field emission STEMs have now been in operation for about twenty years, but it is only in relatively few laboratories that special modification has permitted the performance of CBED experiments. Most notable amongst these pioneering projects is the work in Arizona by Cowley and Spence and, more recently, that in Cambridge by Rodenburg and McMullan.There are a large number of potential advantages of a high intensity, small diameter, focussed probe. We discuss first the advantages for probes larger than the projected unit cell of the crystal under investigation. In this situation we are able to perform CBED on local regions of good crystallinity. Zone axis patterns often contain information which is very sensitive to thickness changes as small as 5nm. In conventional CBED, with a lOnm source, it is very likely that the information will be degraded by thickness averaging within the illuminated area.

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