Nonlinear Lock-In Infrared Microscopy: A Complementary Investigation Technique for the Analysis of Functional Electroceramic Components

2015 ◽  
Vol 21 (5) ◽  
pp. 1145-1152 ◽  
Author(s):  
Michael Hofstätter ◽  
Nadine Raidl ◽  
Bernhard Sartory ◽  
Peter Supancic

AbstractUsing lock-in infrared microscopy as a tool for current detection on the micrometer scale in AC-driven specimens in combination with iterative grinding procedure allows preparation of current dominating microstructure regions on well-polished surfaces. This technique is applied successfully on varistor components based on specially doped ZnO-based varistor ceramics. This peculiar electroceramic material exhibits exceptional high nonlinear current–voltage (I-V) characteristics, described by a power law according I~Vα, caused by double Schottky barriers at the grain boundaries. As a novelty the thermographic response is used to evaluate local electrical properties, namely the nonlinearity coefficient α, on basis of higher order harmonics with respect to the basic electrical driving AC-frequency.To correlate the observed electrical properties to the microstructure, the polar crystal orientation of the relevant ZnO grains is determined by combining electron backscatter diffraction and orientation-dependent patterns as a result of a chemical etching procedure. These findings support a modified new model for describing the grain boundary controlled current flow in a varistor microstructure including orientation-dependent barrier properties. Hence, the experimentally observed current direction-dependent behavior can be described consistently.

2005 ◽  
Vol 475-479 ◽  
pp. 1857-1860
Author(s):  
B.I. Seo ◽  
No Jin Park ◽  
Sung Jin Kim ◽  
B. Yang ◽  
Y.H. Oh ◽  
...  

Issues of ferroelectric high-density memories (>64Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than 0.1um2 and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by an electron backscatter diffraction (EBSD) technique. Ferroelectric domain characteristics by a piezoresponse force microscope (PFM) were also performed to study the dependence of reliabilities on the grain orientations and distributions.


Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.


2020 ◽  
Vol 837 ◽  
pp. 41-45
Author(s):  
Shuai Sun ◽  
Kai Hua Liu

In order to determine the evolution features of deformation twins for TA2 commercial pure titanium (cp-TA2), the TA2 samples were bent under different bending angles in three-point bending tests via a universal testing machine. The electron backscatter diffraction (EBSD) technique was applied to identify the grain boundaries (GBs) and twin boundaries (TBs) in the bending areas. The results reveal that the type of deformation area would effect the evolution of different deformation twins. It is inferred that the state of stress would promote the multiplication of the same type of deformation twins.


Author(s):  
A. Leineweber ◽  
M. Löffler ◽  
S. Martin

Abstract Cu6Sn5 intermetallic occurs in the form of differently ordered phases η, η′ and η′′. In solder joints, this intermetallic can undergo changes in composition and the state of order without or while interacting with excess Cu and excess Sn in the system, potentially giving rise to detrimental changes in the mechanical properties of the solder. In order to study such processes in fundamental detail and to get more detailed information about the metastable and stable phase equilibria, model alloys consisting of Cu3Sn + Cu6Sn5 as well as Cu6Sn5 + Sn-rich melt were heat treated. Powder x-ray diffraction and scanning electron microscopy supplemented by electron backscatter diffraction were used to investigate the structural and microstructural changes. It was shown that Sn-poor η can increase its Sn content by Cu3Sn precipitation at grain boundaries or by uptake of Sn from the Sn-rich melt. From the kinetics of the former process at 513 K and the grain size of the η phase, we obtained an interdiffusion coefficient in η of (3 ± 1) × 10−16 m2 s−1. Comparison of this value with literature data implies that this value reflects pure volume (inter)diffusion, while Cu6Sn5 growth at low temperature is typically strongly influenced by grain-boundary diffusion. These investigations also confirm that η′′ forming below a composition-dependent transus temperature gradually enriches in Sn content, confirming that Sn-poor η′′ is metastable against decomposition into Cu3Sn and more Sn-rich η or (at lower temperatures) η′. Graphic Abstract


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