Formation of Nanoporous Gold Studied by Transmission Electron Backscatter Diffraction

AbstractTransmission electron backscatter diffraction (t-EBSD) was used to investigate the effect of dealloying on the microstructure of 140-nm thin gold foils. Statistical and local comparisons of the microstructure between the nonetched and nanoporous gold foils were made. Analyses of crystallographic texture, misorientation distribution, and grain structure clearly prove that during the dealloying manufacturing process of nanoporous materials the crystallographic texture is enhanced significantly with a clear decrease of internal strain, whereas maintaining the grain structure.

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Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0039 ◽

2012 ◽

Author(s):

Frank Altmann ◽

Jens Beyersdorfer ◽

Jan Schischka ◽

Michael Krause ◽

German Franz ◽

...

Keyword(s):

High Resolution ◽

Cross Section ◽

High Throughput ◽

Cross Sections ◽

Electron Backscatter Diffraction ◽

Grain Structure ◽

Electron Backscatter ◽

Section Surface ◽

Backscatter Diffraction ◽

Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

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Where are the geometrically necessary dislocations accommodating small imprints?

Journal of Materials Research ◽

10.1557/jmr.2009.0131 ◽

2009 ◽

Vol 24 (3) ◽

pp. 647-651 ◽

Cited By ~ 10

Author(s):

M. Rester ◽

C. Motz ◽

R. Pippan

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Twin Boundary ◽

Crystal Orientation ◽

Electron Backscatter Diffraction ◽

Transmission Electron ◽

Electron Backscatter ◽

Copper Single Crystals ◽

Backscatter Diffraction ◽

Small Misorientation

Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) analyses of small indentations in copper single crystals exhibit only slight changes of the crystal orientation in the surroundings of the imprints. Far-reaching dislocations might be the reason for these small misorientation changes. Using EBSD and TEM technique, this work makes an attempt to visualize the far-propagating dislocations by introducing a twin boundary in the vicinity of small indentations. Because dislocations piled up at the twin boundary produce a misorientation gradient, the otherwise far-propagating dislocations can be detected.

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Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

MRS Advances ◽

10.1557/adv.2016.517 ◽

2016 ◽

Vol 1 (43) ◽

pp. 2947-2952

Author(s):

L. Chen ◽

Z.-H. Lu ◽

T.-M. Lu ◽

I. Bhat ◽

S.B. Zhang ◽

...

Keyword(s):

Buffer Layer ◽

High Efficiency ◽

Electron Backscatter Diffraction ◽

Low Cost ◽

High Quality ◽

Tem Analysis ◽

Transmission Electron ◽

Electron Backscatter ◽

Image Position ◽

Backscatter Diffraction

ABSTRACTEpitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[$\bar 1$10]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (∼50 μm) with small angle grain boundaries (< 8o). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.

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Microstructure and Texture Evolutions During Deep Drawing of Mg–Al–Mn Sheets at Elevated Temperatures

Materials ◽

10.3390/ma13163608 ◽

2020 ◽

Vol 13 (16) ◽

pp. 3608 ◽

Cited By ~ 1

Author(s):

Jae-Hyung Cho ◽

Sang-Ho Han ◽

Geon Young Lee

Keyword(s):

Dynamic Recrystallization ◽

Deep Drawing ◽

Elevated Temperatures ◽

Tensile Deformation ◽

Electron Backscatter Diffraction ◽

Texture Evolution ◽

Grain Structure ◽

Transmission Electron ◽

Backscatter Diffraction ◽

Twin Roll

Texture and microstructure evolution of ingot and twin-roll casted Mg–Al–Mn magnesium sheets were examined during deep drawing at elevated temperatures. The twin-roll casted sheets possessed smaller grain sizes and weaker basal intensity levels than the ingot-casted sheets. The strength and elongation at room temperature for the twin-roll casted sheets were greater than those of the ingot-casted sheets. At elevated temperatures, the ingot-casted sheets showed better elongation than the twin-roll casted sheets. Different size and density of precipitates were examined using transmission electron microscopy (TEM) for both ingot-casted and twin-roll-casted sheets. The deep drawing process was also carried out at various working temperatures and deformation rates, 225 °C to 350 °C and 30 mm/min to 50 mm/min, respectively. The middle wall part of cups were mainly tensile deformation, and the lower bent regions of drawn cups were most thinned region. Overall, the ingot-casted sheets revealed better deep drawability than the twin-roll casted sheets. Microstructure and texture evolution of the top, middle and lower parts of drawn cups were investigated using electron backscatter diffraction. Increased deformation rate is important to activate tensile twins both near the bent and flange areas. Ingot casted sheets revealed more tensile twins than twin-roll casted sheets. Increased working temperature is important to activate non-basal slips and produce the DRXed grain structure in the flange. Dynamic recrystallization were frequently found in the top flanges of the cups. Both tensile twins and non-basal slips contributed to occurrence of the dynamic recrystallization in the flange.

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Shear Pressing for Grain Refinement of Al-Mg-Li Sheet

Materials Science Forum ◽

10.4028/www.scientific.net/msf.546-549.885 ◽

2007 ◽

Vol 546-549 ◽

pp. 885-888

Author(s):

Yu Xuan Du ◽

Xin Ming Zhang ◽

Ling Ying Ye ◽

Zhi Hui Luo

Keyword(s):

Shear Deformation ◽

Grain Refinement ◽

Electron Backscatter Diffraction ◽

Grain Structure ◽

Grain Refining ◽

Metallic Materials ◽

Inclined Plane ◽

Fine Grained ◽

Electron Backscatter ◽

Backscatter Diffraction

A novel shear-deformation technique, named ‘shear pressing’ (SP), was developed for fabrication of plate-shaped fine grained metallic materials. The principle of SP is that a material is subjected to shear deformation by utilizing pressing with inclined plane dies. A micrometer order grain structure was obtained in an Al-Mg-Li alloy at strain of ε = -2.3 by utilizing this technique. The grain refinement sequences during pressing were examined by electron backscatter diffraction. The enhancement of grain refinement to the Al-Mg-Li alloy was compared with plane strain compression (PSC) at similar strains. The effect of the shear strain on the accelerated grain refining during compressing has been discussed.

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Resolution of transmission electron backscatter diffraction in aluminum and silver: Effect of the atomic number

Ultramicroscopy ◽

10.1016/j.ultramic.2018.06.019 ◽

2018 ◽

Vol 193 ◽

pp. 126-136 ◽

Cited By ~ 1

Author(s):

Chia-Wei Kuo ◽

Jui-Chao Kuo ◽

Sheng-Chang Wang

Keyword(s):

Atomic Number ◽

Electron Backscatter Diffraction ◽

Transmission Electron ◽

Electron Backscatter ◽

Backscatter Diffraction

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Coupling Automated Electron Backscatter Diffraction with Transmission Electron and Atomic Force Microscopies

Microscopy and Microanalysis ◽

10.1017/s1431927600037193 ◽

2000 ◽

Vol 6 (S2) ◽

pp. 940-941

Author(s):

A.J. Schwartz ◽

M. Kumar ◽

P.J. Bedrossian ◽

W.E. King

Keyword(s):

Grain Boundary ◽

Grain Boundaries ◽

Thermomechanical Processing ◽

Electron Backscatter Diffraction ◽

Grain Boundary Character Distribution ◽

Atomic Force ◽

Transmission Electron ◽

Electron Backscatter ◽

Network Engineering ◽

Backscatter Diffraction

Grain boundary network engineering is an emerging field that encompasses the concept that modifications to conventional thermomechanical processing can result in improved properties through the disruption of the random grain boundary network. Various researchers have reported a correlation between the grain boundary character distribution (defined as the fractions of “special” and “random” grain boundaries) and dramatic improvements in properties such as corrosion and stress corrosion cracking, creep, etc. While much early work in the field emphasized property improvements, the opportunity now exists to elucidate the underlying materials science of grain boundary network engineering. Recent investigations at LLNL have coupled automated electron backscatter diffraction (EBSD) with transmission electron microscopy (TEM)5 and atomic force microscopy (AFM) to elucidate these fundamental mechanisms.An example of the coupling of TEM and EBSD is given in Figures 1-3. The EBSD image in Figure 1 reveals “segmentation” of boundaries from special to random and random to special and low angle grain boundaries in some grains, but not others, resulting from the 15% compression of an Inconel 600 polycrystal.

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