scholarly journals Negative Piezoelectric Coefficient in Ferromagnetic 1H-LaBr2 Monolayer

2022 ◽  
Author(s):  
Mohammad Noor-A-Alam ◽  
Michael Nolan
Keyword(s):  
Piezoelectric Coefficient

scholarly journals First experimental evidence of the piezoelectric nature of struvite

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jolanta Prywer ◽  
Rafał Kruszyński ◽  
Marcin Świątkowski ◽  
Andrzej Soszyński ◽  
Dariusz Kajewski ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Experimental Evidence ◽  
Heating Rate ◽  
Transformation Temperature ◽  
Room Temperature ◽  
Piezoelectric Coefficient ◽  
Piezoelectric Properties ◽  
Parallel Plates ◽  
Gel Growth ◽  
Growth Technique

AbstractIn this paper, we present the first experimental evidence of the piezoelectric nature of struvite (MgNH4PO4·6H2O). Using a single diffusion gel growth technique, we have grown struvite crystals in the form of plane parallel plates. For struvite crystals of this shape, we measured the piezoelectric coefficients d33 and d32. We have found that at room temperature the value of piezoelectric coefficient d33 is 3.5 pm/V, while that of d32 is 4.7 pm/V. These values are comparable with the values for other minerals. Struvite shows stable piezoelectric properties up to the temperature slightly above 350 K, for the heating rate of 0.4 K/min. For this heating rate, and above this temperature, the thermal decomposition of struvite begins, which, consequently, leads to its transformation into dittmarite with the same non-centrosymmetric symmetry as in case of struvite. The struvite-dittmarite transformation temperature is dependent on the heating rate. The higher the heating rate, the higher the temperature of this transformation. We have also shown that dittmarite, like struvite exhibits piezoelectric properties.

scholarly journals Flexible Multiscale Pore Hybrid Self-Powered Sensor for Heart Sound Detection

Sensors ◽  
2021 ◽  
Vol 21 (13) ◽  
pp. 4508
Author(s):  
Boyan Liu ◽  
Liuyang Han ◽  
Lyuming Pan ◽  
Hongzheng Li ◽  
Jingjing Zhao ◽  
...  
Keyword(s):  
Piezoelectric Coefficient ◽  
Heart Sound ◽  
Piezoelectric Materials ◽  
Ferroelectric Material ◽  
Flexible Sensor ◽  
Β Phase ◽  
Short Processing Time ◽  
Sound Detection ◽  
Corona Poling ◽  
Self Powered

This research introduces an idea of producing both nanoscale and microscale pores in piezoelectric material, and combining the properties of the molecular β-phase dipoles in ferroelectric material and the space charge dipoles in order to increase the sensitivity of the sensor and modulate the response frequency bandwidth of the material. Based on this idea, a bi-nano-micro porous dual ferro-electret hybrid self-powered flexible heart sound detection sensor is proposed. Acid etching and electrospinning were the fabrication processes used to produce a piezoelectric film with nanoscale and microscale pores, and corona poling was used for air ionization to produce an electret effect. In this paper, the manufacturing process of the sensor is introduced, and the effect of the porous structure and corona poling on improving the performance of the sensor is discussed. The proposed flexible sensor has an equivalent piezoelectric coefficient d33 of 3312 pC/N, which is much larger than the piezoelectric coefficient of the common piezoelectric materials. Experiments were carried out to verify the function of the flexible sensor together with the SS17L heart sound sensor (BIOPAC, Goleta, CA, USA) as a reference. The test results demonstrated its practical application for wearable heart sound detection and the potential for heart disease detection. The proposed flexible sensor in this paper could realize batch production, and has the advantages of flexibility, low production cost and a short processing time compared with the existing heart sound detection sensors.

Preparation of highly c-axis oriented AlN thin films on Hastelloy tapes with Y2O3 buffer layer for flexible SAW sensor applications

2016 ◽  
Vol 09 (02) ◽  
pp. 1650023 ◽  
Author(s):  
Bin Peng ◽  
Jianying Jiang ◽  
Guo Chen ◽  
Lin Shu ◽  
Jie Feng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Smooth Surface ◽  
Piezoelectric Coefficient ◽  
Piezoelectric Properties ◽  
Mean Square ◽  
Full Width ◽  
Half Maximum ◽  
Sensor Applications ◽  
Saw Sensor ◽  
Y2o3 Buffer Layer

Highly c-axis oriented aluminum nitrade (AlN) films were successfully deposited on flexible Hastelloy tapes by middle-frequency magnetron sputtering. The microstructure and piezoelectric properties of the AlN films were investigated. The results show that the AlN films deposited directly on the bare Hastelloy substrate have rough surface with root mean square (RMS) roughness of 32.43[Formula: see text]nm and its full width at half maximum (FWHM) of the AlN (0002) peak is [Formula: see text]. However, the AlN films deposited on the Hastelloy substrate with Y2O3 buffer layer show smooth surface with RMS roughness of 5.46[Formula: see text]nm and its FWHM of the AlN (0002) peak is only [Formula: see text]. The piezoelectric coefficient d[Formula: see text] of the AlN films deposited on the Y2O3/Hastelloy substrate is larger than three times that of the AlN films deposited on the bare Hastelloy substrate. The prepared highly c-axis oriented AlN films can be used to develop high-temperature flexible SAW sensors.

Sb5+ Modified Phase Transition in (Li, Na, K)(Nb1-xSbx)O3 Piezoelectric Ceramics

2016 ◽  
Vol 848 ◽  
pp. 339-343
Author(s):  
Xiao Kun Zhao ◽  
Bo Ping Zhang ◽  
Lei Zhao ◽  
Li Feng Zhu
Keyword(s):  
Phase Transition ◽  
Phase Boundary ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Piezoelectric Coefficient ◽  
Electromechanical Coupling Coefficient ◽  
Second Phase ◽  
Phase Transition Temperatures ◽  
Two Peaks ◽  
Planar Mode

The modified behavior of the phase transition temperatures (TO-T and/or TC) between orthorhombic (O), tetragonal (T) and cubic (C) that caused by doping Sb5+ in (Li0.052Na0.493K0.455)(Nb1-xSbx)O3 (LNKNSx) ceramics was reported in the present investigation. The results show that differing from the insensitive TO-T to the Sb5+ content, TC splits into two peaks TCI and TCII when doping Sb5+. The decreased TCI by raising x may be ascribed to the Sb-rich grains and the settled TCII round 480 °C resulting from the Sb-lack ones. The enhanced piezoelectric coefficient d33 value of 263 pC/N and planar mode electromechanical coupling coefficient kp value of 42.5% at x=0.052 can be attributed to the polymorphic phase boundary (PPB) behavior with an appropriate ratio between T and O phases without any second phase.

Research of the PZT Polarization for Deformable Mirror

2014 ◽  
Vol 609-610 ◽  
pp. 1331-1335
Author(s):  
Jun Jie Chen ◽  
Ying Liu ◽  
Jian Qiang Ma ◽  
Ji Cong Deng ◽  
Bao Qing Li ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
Deformable Mirror ◽  
Pzt Film ◽  
Zirconate Titanate

This paper demonstrates that the deformation of the piezoelectric deformable mirror (DM) is proportional to the transverse piezoelectric coefficient of the lead zirconate titanate (PZT) by the theoretical analysis. The optimal polarization conditions were obtained by experiments to optimize the performance of the DM. After the optimal polarization, the transverse piezoelectric coefficient of the PZT film increases from 350 pm/V to 431 pm/V, which will improve the deformation of the DM.

Enhanced piezoelectric coefficient of HfO2-modified (K0.44Na0.56)0.94Li0.06(Nb0.94Sb0.06)O3 lead-free ceramics

2014 ◽  
Vol 40 (2) ◽  
pp. 3755-3759 ◽  
Author(s):  
Tao Chen ◽  
Hongli Wang ◽  
Ting Zhang ◽  
Guangchang Wang ◽  
Jifang Zhou ◽  
...  
Keyword(s):  
Piezoelectric Coefficient ◽  
Lead Free ◽  
Lead Free Ceramics

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

The Displacement Characteristics of Piezoelectric Ceramic Micro Actuators Evaluated by Laser Interferometer

2015 ◽  
Vol 645-646 ◽  
pp. 920-925 ◽  
Author(s):  
Hong Wu ◽  
Long Biao He ◽  
Jing Lin Zhou ◽  
Ping Yang
Keyword(s):  
Piezoelectric Ceramic ◽  
Piezoelectric Coefficient ◽  
Laser Interferometer ◽  
Piezoelectric Effect ◽  
Influence Factors ◽  
Energy Transformation ◽  
Measurement Results ◽  
Loading Sequence ◽  
Converse Piezoelectric Effect ◽  
Key Parameter

Understanding and measuring the displacement characteristics of piezoelectric ceramic with electric field exciting are particularly important. The piezoelectric coefficient d33 as the indication of its displacement characteristics, is the key parameter of its energy transformation. In this paper, the characteristics of two kinds of piezoelectric ceramics, PZT4 and PZT5 were studied by the laser interferometer measurement. The influence factors of d33 were studied, including the frequency and amplitude of the exciting signal, the ways of holding, and the loading sequence. Then the measurement results of piezoelectric ceramic with laser interferometer and the quasi-static method were compared, the results showed they had consistence and the analysis of the piezoelectric coefficient d33 measurement by converse piezoelectric effect and by piezoelectric effect was discussed.

scholarly journals Thermal Expansion and Electro-Elastic Features of Ba2TiSi2O8 High Temperature Piezoelectric Crystal

Crystals ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 11 ◽  
Author(s):  
Chao Jiang ◽  
Feifei Chen ◽  
Fapeng Yu ◽  
Shiwei Tian ◽  
Xiufeng Cheng ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Elastic Properties ◽  
Piezoelectric Coefficient ◽  
Linear Thermal Expansion ◽  
Temperature Stability ◽  
Promising Candidate ◽  
Temperature Range ◽  
Sensor Applications ◽  
High Temperature Sensor

A high-quality Ba2TiSi2O8 (BTS) single crystal was grown using the Czochralski (Cz) pulling method. The thermal expansion and electro-elastic properties of BTS crystal were studied for high temperature sensor applications. The relative dielectric permittivities ε 11 T / ε 0 and ε 33 T / ε 0 were determined to be 16.3 and 11.8, while the piezoelectric coefficients d15, d31, d33 were found to be 17.8, 2.9, and 4.0 pC/N, respectively. Temperature dependence of electro-elastic properties were investigated, where the variation of elastic compliance s 55 E (= s 44 E ) was found to be <6% over temperature range of 20–700 °C. Taking advantage of the anisotropic thermal expansion, linear thermal expansion comparable to insulating alumina ceramic was achieved over temperature range up to 650 °C. The optimum crystal cut with large effective piezoelectric coefficient (>8.5 pC/N) and linear thermal expansion coefficient (8.03 ppm/°C) achieved for BTS crystal along the (47°, φ) direction (φ is arbitrary in 0–360°), together with its good temperature stability up to 650 °C, make BTS crystal a promising candidate for high temperature piezoelectric sensors.

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