Precise Regulation of Carrier Concentration in Thermoelectric BiSbTe Alloys via Magnetic Doping

2020 ◽  
Vol 12 (18) ◽  
pp. 20653-20663 ◽  
Author(s):  
Zichen Wei ◽  
Chenyang Wang ◽  
Jiye Zhang ◽  
Jiong Yang ◽  
Zhili Li ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Magnetic Doping

Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 1228-1231
Author(s):  
K Matsushita
Keyword(s):  
Carrier Concentration ◽  
Annealing Process ◽  
Mocvd Growth ◽  
P Type

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Determination of drift mobility and carrier concentration in semiconductors using surface acoustic wave amplifier structure

1985 ◽  
Vol 21 (1) ◽  
pp. 32-33 ◽  
Author(s):  
H. Baudrand ◽  
T.E. Taha ◽  
M. Benslama
Keyword(s):  
Acoustic Wave ◽  
Carrier Concentration ◽  
Surface Acoustic Wave ◽  
Drift Mobility

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

scholarly journals Restructured single parabolic band model for quick analysis in thermoelectricity

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Jianbo Zhu ◽  
Xuemei Zhang ◽  
Muchun Guo ◽  
Jingyu Li ◽  
Jinsuo Hu ◽  
...  
Keyword(s):  
Fermi Level ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Optimization Design ◽  
State Of The Art ◽  
Band Model ◽  
Carrier Effective Mass ◽  
Intermediate Variables ◽  
Level Calculation ◽  
Spb Model

AbstractThe single parabolic band (SPB) model has been widely used to preliminarily elucidate inherent transport behaviors of thermoelectric (TE) materials, such as their band structure and electronic thermal conductivity, etc. However, in the SPB calculation, it is necessary to determine some intermediate variables, such as Fermi level or the complex Fermi-Dirac integrals. In this work, we establish a direct carrier-concentration-dependent restructured SPB model, which eliminates Fermi-Dirac integrals and Fermi level calculation and emerges stronger visibility and usability in experiments. We have verified the reliability of such restructured model with 490 groups of experimental data from state-of-the-art TE materials and the relative error is less than 2%. Moreover, carrier effective mass, intrinsic carrier mobility and optimal carrier concentration of these materials are systematically investigated. We believe that our work can provide more convenience and accuracy for thermoelectric data analysis as well as instructive understanding on future optimization design.

scholarly journals Utilizing complex oxide substrates to control carrier concentration in large-area monolayer MoS2 films

2021 ◽  
Vol 118 (9) ◽  
pp. 093103
Author(s):  
Xudong Zheng ◽  
Eli Gerber ◽  
Jisung Park ◽  
Don Werder ◽  
Orrin Kigner ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Complex Oxide ◽  
Monolayer Mos2 ◽  
Large Area ◽  
Oxide Substrates

scholarly journals Scattering Mechanisms and Suppression of Bipolar Diffusion Effect in Bi2Te2.85Se0.15Ix Compounds

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1564
Author(s):  
Jin Hee Kim ◽  
Song Yi Back ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong-Soo Rhyee
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Lattice Distortion ◽  
Phonon Scattering ◽  
Iodine Concentration ◽  
Mean Free Path ◽  
Bandgap Energy ◽  
Diffusion Effect ◽  
Iodine Doping

We investigated the anisotropic thermoelectric properties of the Bi2Te2.85Se0.15Ix (x = 0.0, 0.1, 0.3, 0.5 mol.%) compounds, synthesized by ball-milling and hot-press sintering. The electrical conductivities of the Bi2Te2.85Se0.15Ix were significantly improved by the increase of carrier concentration. The dominant electronic scattering mechanism was changed from the mixed (T ≤ 400 K) and ionization scattering (T ≥ 420 K) for pristine compound (x = 0.0) to the acoustic phonon scattering by the iodine doping. The Hall mobility was also enhanced with the increasing carrier concentration. The enhancement of Hall mobility was caused by the increase of the mean free path of the carrier from 10.8 to 17.7 nm by iodine doping, which was attributed to the reduction of point defects without the meaningful change of bandgap energy. From the electron diffraction patterns, a lattice distortion was observed in the iodine doped compounds. The modulation vector due to lattice distortion increased with increasing iodine concentration, indicating the shorter range lattice distortion in real space for the higher iodine concentration. The bipolar thermal conductivity was suppressed, and the effective masses were increased by iodine doping. It suggests that the iodine doping minimizes the ionization scattering giving rise to the suppression of the bipolar diffusion effect, due to the prohibition of the BiTe1 antisite defect, and induces the lattice distortion which decreases lattice thermal conductivity, resulting in the enhancement of thermoelectric performance.

Optimizing physical properties of Co-doped ZnO nanoparticles: Controlling oxygen vacancy and carrier concentration

Vacuum ◽  
2021 ◽  
pp. 110488
Author(s):  
Huying Yan ◽  
Jian Xue ◽  
Wenjing Chen ◽  
Jialing Tang ◽  
Ling zhong ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Physical Properties ◽  
Carrier Concentration ◽  
Zno Nanoparticles ◽  
Doped Zno ◽  
Co Doped

Thermoelectric Performance of Cr Doped and Cr–Fe Double-Doped Higher Manganese Silicides with Adjusted Carrier Concentration and Significant Electron–Phonon Interaction

2021 ◽  
Vol 13 (7) ◽  
pp. 8574-8583
Author(s):  
Quansheng Guo ◽  
Wenhao Zhang ◽  
Zihang Liu ◽  
Xiuwei Fu ◽  
Sylvain Le Tonquesse ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance ◽  
Phonon Interaction ◽  
Higher Manganese Silicides ◽  
Electron Phonon Interaction
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