Co-evaporation of CH3NH3PbI3: How Growth Conditions Impact Phase Purity, Photostriction, and Intrinsic Stability

We have investigated effect of the In- and N-rich growth conditions on the structural modification of cubic-phase InN (c-InN) films grown on GaAs (001) substrates by rf-plasmaassisted molecular beam epitaxy (RF-MBE). High resolution x-ray diffraction (HRXRD) and Raman scattering measurements were performed to examine the hexagonal phase generation in the c-InN grown films. It is evident that higher crystal quality c-InN films with higher cubic phase purity (~82%) were achieved under the In-rich growth condition. On the other hand, for the N-rich growth condition, the c-InN films exhibited higher incorporation of hexagonal phase, which is generated in the cubic phase through the incidental stacking faults on the c-InN (111) planes. Our results demonstrate that the In-rich growth condition plays a critical role in the growth of high quality c-InN films with higher cubic phase purity.

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Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118692 ◽

1985 ◽

Vol 43 ◽

pp. 364-365

Author(s):

K.M. Hones ◽

P. Sheldon ◽

B.G. Yacobi ◽

A. Mason

Keyword(s):

High Efficiency ◽

Lattice Mismatch ◽

Low Cost ◽

Growth Conditions ◽

Nonradiative Recombination ◽

Device Structure ◽

Si Substrates ◽

Transmission Electron ◽

Dislocation Densities ◽

Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

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Diffraction from arrays of antiphase boundaries in ordered III-V alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126378 ◽

1987 ◽

Vol 45 ◽

pp. 312-313

Author(s):

T. S. Kuan

Keyword(s):

High Surface ◽

Growth Conditions ◽

Ternary Alloys ◽

Local Growth ◽

Antiphase Boundaries ◽

Surface Mobility ◽

Ordered Phases ◽

Diffraction Patterns ◽

Atomically Flat ◽

Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

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The value of Electron Microscope studies of imperfect natural diamonds

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100174102 ◽

1990 ◽

Vol 48 (4) ◽

pp. 194-195

Author(s):

J C Walmsley ◽

A R Lang

Keyword(s):

Electron Microscope ◽

Classification Scheme ◽

Natural Diamond ◽

Sudden Change ◽

Growth Conditions ◽

Diamond Growth ◽

Major Constituent ◽

Natural Diamonds ◽

Type Ia ◽

Platelet Defects

Interest in the defects and impurities in natural diamond, which are found in even the most perfect stone, is driven by the fact that diamond growth occurs at a depth of over 120Km. They display characteristics associated with their origin and their journey through the mantle to the surface of the Earth. An optical classification scheme for diamond exists based largely on the presence and segregation of nitrogen. For example type Ia, which includes 98% of all natural diamonds, contain nitrogen aggregated into small non-paramagnetic clusters and usually contain sub-micrometre platelet defects on {100} planes. Numerous transmission electron microscope (TEM) studies of these platelets and associated features have been made e.g. . Some diamonds, however, contain imperfections and impurities that place them outside this main classification scheme. Two such types are described.First, coated-diamonds which possess gem quality cores enclosed by a rind that is rich in submicrometre sized mineral inclusions. The transition from core to coat is quite sharp indicating a sudden change in growth conditions, Figure 1. As part of a TEM study of the inclusions apatite has been identified as a major constituent of the impurity present in many inclusion cavities, Figure 2.

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Role of the exosporial membrane in attachment and germination of C. sporogenes

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100146035 ◽

1993 ◽

Vol 51 ◽

pp. 38-39

Author(s):

B.J. Panessa-Warren ◽

G.T. Tortora ◽

J.B. Warren

Keyword(s):

Enzymatic Degradation ◽

Light Transmission ◽

Extended Period ◽

Growth Conditions ◽

Clostridium Sporogenes ◽

Radiation Chemical ◽

Physical Trauma ◽

Extended Contact ◽

Cold Pressure

Some bacteria are capable of forming highly resistant spores when environmental conditions are not adequate for growth. Depending on the genus and species of the bacterium, these endospores are resistant in varying degrees to heat, cold, pressure, enzymatic degradation, ionizing radiation, chemical sterilants,physical trauma and organic solvents. The genus Clostridium, responsible for botulism poisoning, tetanus, gas gangrene and diarrhea in man, produces endospores which are highly resistant. Although some sporocides can kill Clostridial spores, the spores require extended contact with a sporocidal agent to achieve spore death. In most clinical situations, this extended period of treatment is not possible nor practical. This investigation examines Clostridium sporogenes endospores by light, transmission and scanning electron microscopy under various dormant and growth conditions, cataloging each stage in the germination and outgrowth process, and analyzing the role played by the exosporial membrane in the attachment and germination of the spore.

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TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176496 ◽

1990 ◽

Vol 48 (4) ◽

pp. 672-673

Author(s):

N.A. Bert ◽

A.O. Kosogov

Keyword(s):

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Chemical Vapor ◽

Growth Conditions ◽

Dark Field ◽

Organic Chemical ◽

Simple Liquid ◽

Cross Sectional ◽

Conventional Procedure ◽

Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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Defect morphology in thick relaxed layers of InGaAs on GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176472 ◽

1990 ◽

Vol 48 (4) ◽

pp. 668-669

Author(s):

R H Dixon ◽

P Kidd ◽

P J Goodhew

Keyword(s):

Electron Microscopy ◽

Surface Morphology ◽

Growth Conditions ◽

X Ray Diffraction ◽

Double Crystal ◽

Strained Layers ◽

Good Surface ◽

Transmission Electron ◽

Device Structures ◽

Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

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Exploring the Validity and Operational Impact of Using Allied Health Assistants to Conduct Dysphagia Screening for Low-Risk Patients Within the Acute Hospital Setting

American Journal of Speech-Language Pathology ◽

10.1044/2020_ajslp-19-00060 ◽

2020 ◽

Vol 29 (4) ◽

pp. 1944-1955 ◽

Cited By ~ 1

Author(s):

Maria Schwarz ◽

Elizabeth C. Ward ◽

Petrea Cornwell ◽

Anne Coccetti ◽

Pamela D'Netto ◽

...

Keyword(s):

At Risk ◽

Allied Health ◽

Assessment Tool ◽

Hospital Setting ◽

Low Risk ◽

False Negatives ◽

Exact Agreement ◽

Risk Patients ◽

Impact Phase ◽

Operational Impact

Purpose The purpose of this study was to examine (a) the agreement between allied health assistants (AHAs) and speech-language pathologists (SLPs) when completing dysphagia screening for low-risk referrals and at-risk patients under a delegation model and (b) the operational impact of this delegation model. Method All AHAs worked in the adult acute inpatient settings across three hospitals and completed training and competency evaluation prior to conducting independent screening. Screening (pass/fail) was based on results from pre-screening exclusionary questions in combination with a water swallow test and the Eating Assessment Tool. To examine the agreement of AHAs' decision making with SLPs, AHAs ( n = 7) and SLPs ( n = 8) conducted an independent, simultaneous dysphagia screening on 51 adult inpatients classified as low-risk/at-risk referrals. To examine operational impact, AHAs independently completed screening on 48 low-risk/at-risk patients, with subsequent clinical swallow evaluation conducted by an SLP with patients who failed screening. Results Exact agreement between AHAs and SLPs on overall pass/fail screening criteria for the first 51 patients was 100%. Exact agreement for the two tools was 100% for the Eating Assessment Tool and 96% for the water swallow test. In the operational impact phase ( n = 48), 58% of patients failed AHA screening, with only 10% false positives on subjective SLP assessment and nil identified false negatives. Conclusion AHAs demonstrated the ability to reliably conduct dysphagia screening on a cohort of low-risk patients, with a low rate of false negatives. Data support high level of agreement and positive operational impact of using trained AHAs to perform dysphagia screening in low-risk patients.

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