High-Efficiency Removal of Calcium and Magnesium from Lithium-Concentrated Solution via Counter-Current Extraction Using Di-(2-ethylhexyl)phosphinic Acid

Author(s):  
Tianchi Liu ◽  
Ji Chen ◽  
Hailian Li ◽  
Yaxing Han ◽  
Mingyang Liu
2019 ◽  
Vol 9 (2) ◽  
pp. 138-143
Author(s):  
Tianyun Li ◽  
Xiling Dai ◽  
Yichen Li ◽  
Guozheng Huang ◽  
Jianguo Cao

Background:Stenoloma chusanum (L.) Ching is a Chinese traditional medicinal fern with high total flavonoid and total phenolic content. Traditionally, phenolic compounds were separated by using column chromatography, which is relatively inefficient. </P><P> Objective: This study aims to use an efficient method to separate natural products from S. chusanum by Medium-Pressure Liquid Chromatography (MPLC) and High-Speed Counter-Current Chromatography (HSCCC).Methods:In the present research, firstly, a sample (2.5 g) from the dichloromethane extract of S. chusanum was separated by MPLC. Next, fraction P5 was purified by HSCCC with a two-phase solvent system composed of hexane-ethyl acetate-methanol-water (HEMWat) at a volume ratio of 2:4:1:4 (v/v/v/v). </P><P> Result: Four phenolic acids were obtained and their structures were identified by means of NMR and ESI-mass analysis. They were identified as: 1) protocatechuic acid (34 mg, purity 90.1%), 2) syringic acid (66 mg, purity 99.0%), 3) p-hydroxybenzoic acid (5 mg, purity 91.2%) and 4) vanillic acid (6 mg, purity 99.3%).Conclusion:The combination of MPLC and HSCCC is a high-efficiency separation method for natural products. This is the first report with regard to the separation of four phenolic acids in one step by MPLC and HSCCC from S. chusanum (L.) Ching.


2022 ◽  
Vol 964 (1) ◽  
pp. 012030
Author(s):  
Pham-Hung Duong ◽  
Ngoc-Han T. Huynh ◽  
Yong-Soo Yoon

Abstract This study was carried out to assess the treatment ability of color, dye, and COD in the dyeing wastewater containing C.I Reactive Blue 160 by ozonation system. Both batch and continuous operating modes with concurrent and counter-current flows were investigated. The effects of the ozone gas flow rate, pH, temperature, Na2CO3 concentration, and initial dye concentration were evaluated. The decolorization, dye removal efficiencies, and mineralization ability of COD by ozonation were determined. The results indicated that ozonation had high efficiency in the treatment of dyeing wastewater containing C.I Reactive Blue 160. The treatment performance was affected by the ozone gas flow rate, pH, temperature, Na2CO3 concentration, and initial dye concentration. The removal efficiency of color, dye, and COD were 98.04%, 99.84%, and 87.31% for the treatment of 200 mg/L initial dye concentration in batch mode with 30 min ozonation time, respectively. In the continuous operation and counter-current flow, the color, dye, and COD removal efficiencies reached 97.24%, 99.76%, and 86.38% after 30 min HRT, respectively, and higher than concurrent flow. The reaction of ozone and C. I Reactive Blue 160 was the first-order reaction in both batch and continuous operation. The complete mineralization required 90 min ozonation time.


2016 ◽  
Vol 162 ◽  
pp. 9-15 ◽  
Author(s):  
Sami Virolainen ◽  
Mojtaba Fallah Fini ◽  
Ville Miettinen ◽  
Antero Laitinen ◽  
Mika Haapalainen ◽  
...  

Desalination ◽  
2020 ◽  
Vol 479 ◽  
pp. 114306 ◽  
Author(s):  
Dong Shi ◽  
Bin Cui ◽  
Lijuan Li ◽  
Min Xu ◽  
Yuze Zhang ◽  
...  

2018 ◽  
Vol 931 ◽  
pp. 949-953 ◽  
Author(s):  
Evgeny V. Alekseev

In the general balance of water consumption, a considerable part falls on softened water. The processes of obtaining softened water form a significant amount of liquid waste containing calcium and magnesium salts. We show the possibility of using wastewater from water softening installations for the treatment of wastewater containing dyes. The obtained results demonstrate high efficiency of wastewater treatment in textile factories. An additional advantage of the use of sewage water softening plants is the economy of reagents for the removal of dyes.


1958 ◽  
Author(s):  
R.P. Jr. Levey ◽  
A. de la Garza ◽  
S.C. Jacobs ◽  
H.M. Heidt ◽  
P.E. Trent

1988 ◽  
Vol 102 ◽  
pp. 41
Author(s):  
E. Silver ◽  
C. Hailey ◽  
S. Labov ◽  
N. Madden ◽  
D. Landis ◽  
...  

The merits of microcalorimetry below 1°K for high resolution spectroscopy has become widely recognized on theoretical grounds. By combining the high efficiency, broadband spectral sensitivity of traditional photoelectric detectors with the high resolution capabilities characteristic of dispersive spectrometers, the microcalorimeter could potentially revolutionize spectroscopic measurements of astrophysical and laboratory plasmas. In actuality, however, the performance of prototype instruments has fallen short of theoretical predictions and practical detectors are still unavailable for use as laboratory and space-based instruments. These issues are currently being addressed by the new collaborative initiative between LLNL, LBL, U.C.I., U.C.B., and U.C.D.. Microcalorimeters of various types are being developed and tested at temperatures of 1.4, 0.3, and 0.1°K. These include monolithic devices made from NTD Germanium and composite configurations using sapphire substrates with temperature sensors fabricated from NTD Germanium, evaporative films of Germanium-Gold alloy, or material with superconducting transition edges. A new approache to low noise pulse counting electronics has been developed that allows the ultimate speed of the device to be determined solely by the detector thermal response and geometry. Our laboratory studies of the thermal and resistive properties of these and other candidate materials should enable us to characterize the pulse shape and subsequently predict the ultimate performance. We are building a compact adiabatic demagnetization refrigerator for conveniently reaching 0.1°K in the laboratory and for use in future satellite-borne missions. A description of this instrument together with results from our most recent experiments will be presented.


Author(s):  
J. M. Cowley ◽  
R. Glaisher ◽  
J. A. Lin ◽  
H.-J. Ou

Some of the most important applications of STEM depend on the variety of imaging and diffraction made possible by the versatility of the detector system and the serial nature, of the image acquisition. A special detector system, previously described, has been added to our STEM instrument to allow us to take full advantage of this versatility. In this, the diffraction pattern in the detector plane may be formed on either of two phosphor screens, one with P47 (very fast) phosphor and the other with P20 (high efficiency) phosphor. The light from the phosphor is conveyed through a fiber-optic rod to an image intensifier and TV system and may be photographed, recorded on videotape, or stored digitally on a frame store. The P47 screen has a hole through it to allow electrons to enter a Gatan EELS spectrometer. Recently a modified SEM detector has been added so that high resolution (10Å) imaging with secondary electrons may be used in conjunction with other modes.


Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.


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