scholarly journals Reducing the impact of Auger recombination in quasi-2D perovskite light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuanzhi Jiang ◽  
Minghuan Cui ◽  
Saisai Li ◽  
Changjiu Sun ◽  
Yanmin Huang ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Quantum Yields ◽  
Excitation Density ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Order Of Magnitude ◽  
The Impact ◽  
Auger Recombination Rate

AbstractRapid Auger recombination represents an important challenge faced by quasi-2D perovskites, which induces resulting perovskite light-emitting diodes’ (PeLEDs) efficiency roll-off. In principle, Auger recombination rate is proportional to materials’ exciton binding energy (Eb). Thus, Auger recombination can be suppressed by reducing the corresponding materials’ Eb. Here, a polar molecule, p-fluorophenethylammonium, is employed to generate quasi-2D perovskites with reduced Eb. Recombination kinetics reveal the Auger recombination rate does decrease to one-order-of magnitude lower compared to its PEA+ analogues. After effective passivation, nonradiative recombination is greatly suppressed, which enables resulting films to exhibit outstanding photoluminescence quantum yields in a broad range of excitation density. We herein demonstrate the very efficient PeLEDs with a peak external quantum efficiency of 20.36%. More importantly, devices exhibit a record luminance of 82,480 cd m−2 due to the suppressed efficiency roll-off, which represent one of the brightest visible PeLEDs yet.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

scholarly journals High-performance quasi-2D perovskite light-emitting diodes: from materials to devices

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Li Zhang ◽  
Changjiu Sun ◽  
Tingwei He ◽  
Yuanzhi Jiang ◽  
Junli Wei ◽  
...  
Keyword(s):  
Energy Transfer ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Structural Characteristics ◽  
Quantum Yields ◽  
Research Directions ◽  
Light Emitting ◽  
Perovskite Materials ◽  
Quantum Confinement Effects ◽  
Semiconducting Properties

AbstractQuasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards developing high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.

scholarly journals Efficient and large-area all vacuum-deposited perovskite light-emitting diodes via spatial confinement

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Peipei Du ◽  
Jinghui Li ◽  
Liang Wang ◽  
Liang Sun ◽  
Xi Wang ◽  
...  
Keyword(s):  
High Resolution ◽  
Large Scale ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Scale Production ◽  
Nonradiative Recombination ◽  
Large Area ◽  
Spatial Confinement ◽  
Light Emitting ◽  
Large Scale Production

AbstractWith rapid advances of perovskite light-emitting diodes (PeLEDs), the large-scale fabrication of patterned PeLEDs towards display panels is of increasing importance. However, most state-of-the-art PeLEDs are fabricated by solution-processed techniques, which are difficult to simultaneously achieve high-resolution pixels and large-scale production. To this end, we construct efficient CsPbBr3 PeLEDs employing a vacuum deposition technique, which has been demonstrated as the most successful route for commercial organic LED displays. By carefully controlling the strength of the spatial confinement in CsPbBr3 film, its radiative recombination is greatly enhanced while the nonradiative recombination is suppressed. As a result, the external quantum efficiency (EQE) of thermally evaporated PeLED reaches 8.0%, a record for vacuum processed PeLEDs. Benefitting from the excellent uniformity and scalability of the thermal evaporation, we demonstrate PeLED with a functional area up to 40.2 cm2 and a peak EQE of 7.1%, representing one of the most efficient large-area PeLEDs. We further achieve high-resolution patterned perovskite film with 100 μm pixels using fine metal masks, laying the foundation for potential display applications. We believe the strategy of confinement strength regulation in thermally evaporated perovskites provides an effective way to process high-efficiency and large-area PeLEDs towards commercial display panels.

Assessing the impact of the transition to Light Emitting Diodes based solar lighting systems in India

2013 ◽  
Vol 17 (4) ◽  
pp. 363-370 ◽  
Author(s):  
Santosh M. Harish ◽  
Shuba V. Raghavan ◽  
Milind Kandlikar ◽  
Gireesh Shrimali
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Solar Lighting ◽  
Lighting Systems ◽  
The Impact

A formalism for the indirect Auger effect. II

1976 ◽  
Vol 347 (1651) ◽  
pp. 565-573 ◽  
Keyword(s):  
Band Structure ◽  
Auger Recombination ◽  
Preceding Paper ◽  
Recombination Coefficient ◽  
Overlap Integrals ◽  
Estimated Parameters ◽  
Order Of Magnitude ◽  
Auger Effect ◽  
First Time ◽  
Auger Recombination Rate

The Auger recombination rate in indirect semiconductors with zincblende and diamond lattices is investigated, account being taken, for the first time, the properties of overlap integrals near symmetry points and axes. The effect of using theoretically estimated parameters is a reduction of the recombination coefficient by a factor 10. It is explained that the results, and those of the preceding paper, are still subject to uncertainties arising from the band structure so that only the order of magnitude of these coefficients can so far be regarded as known theoretically.

Studies of Degradation in Nichia AlGaN/InGaN/GaN Blue Light Emitting Diodes Under Close to Normal Operating Conditions

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Osiński ◽  
D. L. Barton ◽  
C. J. Helms ◽  
P. Perlin ◽  
N. H. Berg ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Defect Density ◽  
Degradation Process ◽  
Operating Conditions ◽  
Similar Amount ◽  
Life Testing ◽  
Light Emitting ◽  
High Pulsed Current ◽  
The Impact

AbstractThe reliability of devices fabricated in GaN and related alloys, especially under high current densities as would be found in lasers, has yet to be fully characterized. Our previous work [1] investigated the degradation of GaN-based blue light emitting diodes (LEDs) under high pulsed current stress. This work indicated a possible correlation between the high crystal defect density and failures caused by metal migration along these defect tubes. To assess the impact of this data on devices under more normal conditions, several LEDs from both older and more recent production lots were placed in a controlled temperature and current environment for several thousand hours. The test started with a constant 20 mA current for the first 1000 hours and continued for another 1650 hours at various currents up to 70 mA, all at a temperature of 23 °C. During this test, one of the older generation LED's output degraded by more than 50%. Subsequent failure analysis showed that this was caused by a crack which isolated part of the active region from the p-contact. The remaining LEDs were returned to life testing where the temperature was subsequently increased by 5 °C after each 500 hours of testing. The output from one of the newer LEDs dreiven at 70 mA degraded to 55% of its original value after 3600 hours and a second newer LED degraded by a similar amount after 4400 hours. The first failure, LED #16, did not exhibit a significant change in its I-V characteristics indicating that a change in the package transparency was a likely cause for the observed degradation. The second failure, LED #17, did show a noticeable change in its I-V characteristics. This device was subsequently returned to life testing where the degradation process will be monitored for further changes.

Using phosphorescent PtAu3 clusters for superior solution-processable organic light emitting diodes with very small efficiency roll-off

2018 ◽  
Vol 6 (33) ◽  
pp. 8966-8976 ◽  
Author(s):  
Nagarajan Natarajan ◽  
Lin-Xi Shi ◽  
Hui Xiao ◽  
Jin-Yun Wang ◽  
Li-Yi Zhang ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Quantum Yields ◽  
Light Emitting ◽  
Cluster Complexes ◽  
Organic Light ◽  
Solution Processable

Tetraphosphine-supported PtAu3 cluster complexes display intense phosphorescence with quantum yields of over 90% in doped films. High-efficiency solution-processable OLEDs are successfully achieved with extremely small EQE roll-off at a practical brightness over 1000 cd m−2.

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