scholarly journals Laser soliton microcombs heterogeneously integrated on silicon

Science ◽  
2021 ◽  
Vol 373 (6550) ◽  
pp. 99-103
Author(s):  
Chao Xiang ◽  
Junqiu Liu ◽  
Joel Guo ◽  
Lin Chang ◽  
Rui Ning Wang ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Low Cost ◽  
High Capacity ◽  
Complementary Metal Oxide Semiconductor ◽  
Laser Frequency ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Mobile Platforms ◽  
Frequency Combs ◽  
On Chip

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection and ranging, or photonics-assisted signal processing. We report heterogeneously integrated laser soliton microcombs combining both indium phospide/silicon (InP/Si) semiconductor lasers and ultralow-loss silicon nitride (Si3N4) microresonators on a monolithic silicon substrate. Thousands of devices can be produced from a single wafer by using complementary metal-oxide-semiconductor–compatible techniques. With on-chip electrical control of the laser-microresonator relative optical phase, these devices can output single-soliton microcombs with a 100-gigahertz repetition rate. Furthermore, we observe laser frequency noise reduction due to self-injection locking of the InP/Si laser to the Si3N4 microresonator. Our approach provides a route for large-volume, low-cost manufacturing of narrow-linewidth, chip-based frequency combs for next-generation high-capacity transceivers, data centers, space and mobile platforms.

scholarly journals A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Popa ◽  
Richard Hopper ◽  
Syed Zeeshan Ali ◽  
Matthew Thomas Cole ◽  
Ye Fan ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Light Sources ◽  
Mir Spectroscopy ◽  
Sensing Applications ◽  
Cmos Mems ◽  
Extended Operation ◽  
On Chip

AbstractThe gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 $$^{\circ }$$ ∘ C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 $$^{\circ }$$ ∘ C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.

scholarly journals A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing

2021 ◽  
Author(s):  
Daniel Popa ◽  
Richard Hopper ◽  
Syed Zeeshan Ali ◽  
Matthew Cole ◽  
Ye Fan ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Light Sources ◽  
Mir Spectroscopy ◽  
Sensing Applications ◽  
Cmos Mems ◽  
Extended Operation ◽  
On Chip

Abstract The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 • C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 • C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Sensors.

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

scholarly journals Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3610
Author(s):  
Adrián J. Torregrosa ◽  
Emir Karamehmedović ◽  
Haroldo Maestre ◽  
María Luisa Rico ◽  
Juan Capmany
Keyword(s):  
Optical Communications ◽  
Near Infrared ◽  
Nonlinear Crystal ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Infrared Image ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Oxide Semiconductor ◽  
Free Space Optical

Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-semiconductor devices). This work is an extension of a previous study where we recently introduced this technique in the context of optical communications, in particular in FSOC (free-space optical communications). Herein, we present an image up-conversion system based on a 1064 nm Nd3+: YVO4 solid-state laser with a KTP (potassium titanyl phosphate) nonlinear crystal located intra-cavity where a laser beam at 1550 nm 2D spatially-modulated with a binary Quick Response (QR) code is mixed, giving an up-converted code image at 631 nm that is detected with an Si-based camera. The underlying technology allows for the extension of other IR spectral allocations, construction of compact receivers at low cost, and provides a natural way for increased protection against eavesdropping.

scholarly journals Light-Free Cross-Talk Analysis of a CMOS Infrared Detector Array

Proceedings ◽  
2020 ◽  
Vol 56 (1) ◽  
pp. 10
Author(s):  
Ying Dai ◽  
Syed Zeeshan Ali ◽  
Richard Hopper ◽  
Claudio Falco ◽  
Daniel Popa ◽  
...  
Keyword(s):  
Cross Talk ◽  
Low Cost ◽  
Infrared Detector ◽  
Complementary Metal Oxide Semiconductor ◽  
High Volume ◽  
Oxide Semiconductor ◽  
Simple Method ◽  
Monolithically Integrated ◽  
Thermal Cameras ◽  
Thermal Imagers

Low-cost infrared (IR) thermal cameras are powering a rising market of industrial and consumer applications. Complementary metal-oxide-semiconductor (CMOS)-based thermopile arrays are proven thermal imagers that can be monolithically integrated into low-cost and low-power-consumption formats for high-volume manufacturability. Here we present a simple method to evaluate the cross-talk of these arrays and propose a numerical model for device optimization.

scholarly journals A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

2019 ◽  
Vol 9 (2) ◽  
pp. 255 ◽  
Author(s):  
Quentin Wilmart ◽  
Houssein El Dirani ◽  
Nicola Tyler ◽  
Daivid Fowler ◽  
Stéphane Malhouitre ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Photonics ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Combs ◽  
High Data ◽  
Core Technology ◽  
Rate Transmission ◽  
Optical Phased Arrays ◽  
Integration Strategies

Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.

scholarly journals Low-Cost 2D Index and Straightness Measurement System Based on a CMOS Image Sensor

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5461 ◽  
Author(s):  
Alain Küng ◽  
Benjamin A. Bircher ◽  
Felix Meli
Keyword(s):  
Measurement System ◽  
Degrees Of Freedom ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Measurement Systems ◽  
Starting Point ◽  
Sensor Properties

Accurate traceable measurement systems often use laser interferometers for position measurements in one or more dimensions. Since interferometers provide only incremental information, they are often combined with index sensors to provide a stable reference starting point. Straightness measurements are important for machine axis correction and for systems having several degrees of freedom. In this paper, we investigate the accuracy of an optical two-dimensional (2D) index sensor, which can also be used in a straightness measurement system, based on a fiber-coupled, collimated laser beam pointing onto an image sensor. Additionally, the sensor can directly determine a 2D position over a range of a few millimeters. The device is based on a simple and low-cost complementary metal–oxide–semiconductor (CMOS) image sensor chip and provides sub-micrometer accuracy. The system is an interesting alternative to standard techniques and can even be implemented on machines for real-time corrections. This paper presents the developed sensor properties for various applications and introduces a novel error separation method for straightness measurements.

scholarly journals Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Nanophotonics ◽  
2017 ◽  
Vol 6 (6) ◽  
pp. 1343-1352 ◽  
Author(s):  
Chuantong Cheng ◽  
Beiju Huang ◽  
Xurui Mao ◽  
Zanyun Zhang ◽  
Zan Zhang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Low Cost ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Optical Signal ◽  
Optical Interconnect ◽  
Optical Receiver ◽  
Oxide Semiconductor ◽  
Experimental Realization ◽  
Operation Speed

AbstractOptical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

scholarly journals Fully integrated CMOS-compatible polarization analyzer

Nanophotonics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 467-474 ◽  
Author(s):  
Wenhao Wu ◽  
Yu Yu ◽  
Wei Liu ◽  
Xinliang Zhang
Keyword(s):  
Polarization State ◽  
Complementary Metal Oxide Semiconductor ◽  
Polarization Measurement ◽  
Oxide Semiconductor ◽  
Polarization Angle ◽  
Fully Integrated ◽  
Polarization Analyzer ◽  
On Chip ◽  
Easy Integration ◽  
Silicon Based

AbstractPolarization measurement has been widely used in material characterization, medical diagnosis and remote sensing. However, existing commercial polarization analyzers are either bulky schemes or operate in non-real time. Recently, various polarization analyzers have been reported using metal metasurface structures, which require elaborate fabrication and additional detection devices. In this paper, a compact and fully integrated silicon polarization analyzer with a photonic crystal-like metastructure for polarization manipulation and four subsequent on-chip photodetectors for light-current conversion is proposed and demonstrated. The input polarization state can be retrieved instantly by calculating four output photocurrents. The proposed polarization analyzer is complementary metal oxide semiconductor-compatible, making it possible for mass production and easy integration with other silicon-based devices monolithically. Experimental verification is also performed for comparison with a commercial polarization analyzer, and deviations of the measured polarization angle are <±1.2%.

scholarly journals A Smart Floating Gate Transistor with Two Control Gates for Active Noise Control

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 722
Author(s):  
Mao ◽  
Yang ◽  
Ma ◽  
Yan ◽  
Zhang
Keyword(s):  
Large Scale ◽  
Noise Control ◽  
Low Cost ◽  
Active Noise Control ◽  
Complementary Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Active Noise ◽  
Floating Gate Transistor

A smart floating gate transistor with two control gates was proposed for active noise control in bioelectrical signal measurement. The device, which is low cost and capable of large-scale integration, was implemented in a standard single-poly complementary metal–oxide–semiconductor (CMOS) process. A model of the device was developed to demonstrate the working principle. Theoretical analysis and simulation results proved the superposition of the two control gates. A series of test experiments were carried out and the results showed that the device was in accordance with the basic electrical characteristics of a floating gate transistor, including the current–voltage (I–V) characteristics and the threshold characteristics observed on the two control gates. Based on the source follower circuit, the experimental results proved that the device can reduce interference by more than 29 dB, which demonstrates the feasibility of the proposed device for active noise control.

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