scholarly journals Interface atom mobility and charge transfer effects on CuO and Cu2O formation on Cu3Pd(111) and Cu3Pt(111)

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yasutaka Tsuda ◽  
Jessiel Siaron Gueriba ◽  
Takamasa Makino ◽  
Wilson Agerico Diño ◽  
Akitaka Yoshigoe ◽  
...  

AbstractWe bombarded $$\mbox{$\text{Cu}_{3}\text{Pd}(111)$}$$ Cu 3 Pd ( 111 ) and $$\mbox{$\text{Cu}_{3}\text{Pt}(111)$}$$ Cu 3 Pt ( 111 ) with a 2.3 eV hyperthermal oxygen molecular beam (HOMB) source, and characterized the corresponding (oxide) surfaces with synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS). At $$300\,\text{K}$$ 300 K , CuO forms on both $$\mbox{$\text{Cu}_{3}\text{Pd}(111)$}$$ Cu 3 Pd ( 111 ) and $$\mbox{$\text{Cu}_{3}\text{Pt}(111)$}$$ Cu 3 Pt ( 111 ) . When we increase the surface temperature to $$500\,\text{K}$$ 500 K , $$\mbox{$\text{Cu}_{2}\text{O}$}$$ Cu 2 O also forms on $$\mbox{$\text{Cu}_{3}\text{Pd}(111)$}$$ Cu 3 Pd ( 111 ) , but not on $$\mbox{$\text{Cu}_{3}\text{Pt}(111)$}$$ Cu 3 Pt ( 111 ) . For comparison, $$\mbox{$\text{Cu}_{2}\text{O}$}$$ Cu 2 O forms even at $$300\,\text{K}$$ 300 K on Cu(111). On $$\mbox{$\text{Cu}_{3}\text{Au}(111)$}$$ Cu 3 Au ( 111 ) , $$\mbox{$\text{Cu}_{2}\text{O}$}$$ Cu 2 O forms only after $$500\,\text{K}$$ 500 K , and no oxides can be found at $$300\,\text{K}$$ 300 K . We ascribe this difference in Cu oxide formation to the mobility of the interfacial species (Cu/Pd/Pt) and charge transfer between the surface Cu oxides and subsurface species (Cu/Pd/Pt).

1989 ◽  
Vol 70 (5) ◽  
pp. 567-571 ◽  
Author(s):  
Jun Kawai ◽  
Yoshimasa Nihei ◽  
Masanori Fujinami ◽  
Yasuhiro Higashi ◽  
Sei Fukushima ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Qiyang Lu ◽  
Henrique Martins ◽  
Juhan Matthias Kahk ◽  
Gaurab Rimal ◽  
Seongshik Oh ◽  
...  

AbstractWhen a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO2, which consists of alternating layers of metallic Pd and Mott-insulating CoO2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properties of PdCoO2, we revealed its layer-resolved electronic structure combining standing-wave X-ray photoemission spectroscopy and ab initio many-body calculations. Experimentally, we have decomposed the measured VB spectrum into contributions from Pd and CoO2 layers. Computationally, we find that many-body interactions in Pd and CoO2 layers are highly different. Holes in the CoO2 layer interact strongly with charge-transfer excitons in the same layer, whereas holes in the Pd layer couple to plasmons in the Pd layer. Interestingly, we find that holes in states hybridized across both layers couple to both types of excitations (charge-transfer excitons or plasmons), with the intensity of photoemission satellites being proportional to the projection of the state onto a given layer. This establishes satellites as a sensitive probe for inter-layer hybridization. These findings pave the way towards a better understanding of complex many-electron interactions in layered quantum materials.


1989 ◽  
Vol 159 ◽  
Author(s):  
Koichi Akimoto ◽  
Jun'Ichiro Mizuki ◽  
Ichiro Hirosawa ◽  
Junji Matsui

ABSTRACTSurface superstructures (reconstructed structures) have been observed by many authors. However, it is not easy to confirm that a superstructure does exist at an interface between two solid layers. The present paper reports a direct observation, by a grazing incidence x-ray diffraction technique with use of synchrotron radiation, of superstructures at the interface. Firstly, the boron-induced R30° reconstruction at the Si interface has been investigated. At the a Si/Si(111) interface, boron atoms at 1/3 ML are substituted for silicon atoms, thus forming a R30° lattice. Even at the interface between a solid phase epitaxial Si(111) layer and a Si(111) substrate, the boron-induced R30° reconstruction has been also observed. Secondly, SiO2/Si(100)-2×l interfacial superstructures have been investigated. Interfacial superstructures have been only observed in the samples of which SiO2 layers have been deposited with a molecular beam deposition method. Finally, the interfaces of MOCVD-grown AIN/GaAs(100) have been shown to have 1×4 and 1×6 superstructures.


2019 ◽  
Vol 61 (12) ◽  
pp. 2294
Author(s):  
С.Н. Тимошнев ◽  
А.М. Мизеров ◽  
Г.В. Бенеманская ◽  
С.А. Кукушкин ◽  
А.Д. Буравлев

The results of experimental studies of the electronic and photoemission properties of an epitaxial GaN layer grown on a SiC/Si(111) substrate by plasma assisted molecular beam epitaxy are presented. The electronic structure of the GaN surface and ultrathin Li/GaN interface was first studied in situ under ultrahigh vacuum conditions under different Li coverages. The experiments were performed using photoelectron spectroscopy with synchrotron radiation in the photon energy range of 75–850 eV. The photoemission spectra in the region of the valence band and surface states and the photoemission spectra from the N 1s, Ga 3d, Li 2s core levels were studied for different submonolayer Li coverages. It is established that Li adsorption causes significant changes in the general form of the spectra induced by charge transfer between the Li layer and the lower N and Ga layers. It is established that the GaN surface has predominantly N-polarity. The semiconductor character of the Li / GaN interface is shown.


2020 ◽  
Vol 128 (13) ◽  
pp. 135702
Author(s):  
Niloy Chandra Saha ◽  
Kazutoshi Takahashi ◽  
Masaki Imamura ◽  
Makoto Kasu

2010 ◽  
Vol 114 (49) ◽  
pp. 21450-21456 ◽  
Author(s):  
J.-J. Gallet ◽  
F. Bournel ◽  
D. Pierucci ◽  
M. Bonato ◽  
A. Khaliq ◽  
...  

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