scholarly journals Control parameters for electrochemically relevant materials: the significance of size and complexity

2014 ◽  
Vol 176 ◽  
pp. 17-29 ◽  
Author(s):  
J. Maier
Keyword(s):  
Integrated Circuits ◽  
Phase Distribution ◽  
Ex Situ ◽  
Control Parameters ◽  
Complex Situation ◽  
Equilibrium Situation ◽  
Number Ratio ◽  
Electrochemical Storage ◽  
Storage Properties

This contribution is concerned with the control parameters for arriving at defined, electrochemically relevant materials. The treatment is precise as far as the equilibrium situation of simple crystals is concerned, but becomes more and more qualitative if the distance from equilibrium or the (structural or compositional) complexity increases. It proves useful to distinguish between in situ parameters and ex situ parameters, the number ratio of which decreases with increasing distance from equilibrium. A particularly complex situation is met if not only size, shape and phase distribution are important, but even morphological details are of relevance, as it is the case for modern battery electrodes (“electrochemical integrated circuits”). For such cases archetypical examples along with their advantages or disadvantages for electrochemical storage properties are discussed. In this context, special emphasis is placed upon the dimensionality and distribution topology of building elements.

scholarly journals Characterization of in Situ Zirconium Diboride (Zrb2) Reinforced by Aluminium-Copper (Al-Cu) Metal Matrix Composites

2019 ◽  
Vol 7 (4.14) ◽  
pp. 406
Author(s):  
N. H. Mustafa ◽  
N. N. A. Basir ◽  
R. E. Ibrahim ◽  
M. M. Mahat ◽  
N. N. Bonnia ◽  
...  
Keyword(s):  
Phase Distribution ◽  
Microstructural Analysis ◽  
Metallic Matrix ◽  
Ex Situ ◽  
Homogeneous Distribution ◽  
Second Phase ◽  
Matrix Composites ◽  
In Situ Reaction ◽  
Clean Interface

Aluminium matrix composites by way of in-situ reaction has arisen as a preference conducive to knock out imperfections and defects exiting within ex situ MMC. In the present work, Al-Cu-ZrB2 have been develop through in situ reaction which boost mechanical properties over dispersion strengthening together with grain refinement obtained by the existence of each particulates inside the melt all along solidification. Al-Cu reinforced among different proportion of ZrB2 (0, 3 and 6 wt. %) synthesized using in situ fabrication at 800 °C of molten aluminum-copper alloys by inorganic salts K2ZrF6 together with KBF4. The amalgam were specified using XRD, FESEM together with mechanical test on appropriately sectioned and metallographically prepared surface to examine and inspect phase distribution, hardness together with tensile properties. From result acquired, raised ZrB2 amount will increase rate of tensile and hardness characteristics of Al-Cu alloy. XRD patterns exposed development of ZrB2 particulates without existence of unspecified other compounds. Most of ZrB2 granular were located near grain boundaries of Al dendrites. Microstructural analysis exposed the homogeneous and consistent allocation of second phase particles, clean interface and favorable bonding. It is support that ZrB2 molecules are predominantly in nano size among hexagonal either tetragonal shape, yet minor molecules in micron size are also noticed. For that reason, composite synthesized using in situ techniques exhibit homogeneous distribution of reinforcing tend to be superlative associated within clean interface along the metallic matrix. In order to accomplish better mechanical features, it is necessary to regulate and control phase arrangement all along fabrication of Al-Cu with higher contents of ZrB2.  

A Jeolco 200A Cartridge with Specimen Heating, Tilting, and Power Provisions

1975 ◽  
Vol 33 ◽  
pp. 152-153
Author(s):  
R. M. Anderson ◽  
J. K. Howard ◽  
P. Fullam
Keyword(s):  
Integrated Circuits ◽  
Thin Metal Film ◽  
Ex Situ ◽  
In Situ Observation ◽  
Electron Microscopic ◽  
Transmission Electron Microscopic Study ◽  
Transmission Electron ◽  
Heat Treated ◽  
Gradient Effects

The transmission electron microscopic study of thin metal film interconnections on electronic integrated circuits requires a sophisticated in-situ capability. Electromigration, particularly, cannot be investigated solely by viewing static heat-treated or electrically stressed specimens ex-situ. The key to the early electromigration studies by Blech, and others, was the in-situ observation of material movement in anelectrical-powering-stage equipped TEM. Blech's approach was insensitive to structure effects because of an absence of heating capability; he therefore relied on joule heating and temperature gradient effects.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Atomic Layer Deposition of LiF and Lithium Ion Conducting (AlF3)(LiF)x Alloys Using Trimethylaluminum, Lithium Hexamethyldisilazide and Hydrogen Fluoride

2017 ◽  
Author(s):  
Younghee Lee ◽  
Daniela M. Piper ◽  
Andrew S. Cavanagh ◽  
Matthias J. Young ◽  
Se-Hee Lee ◽  
...  
Keyword(s):  
Lithium Ion ◽  
Atomic Layer ◽  
Mass Gain ◽  
Alloy Film ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Ion Conducting ◽  
Good Agreement

<div>Atomic layer deposition (ALD) of LiF and lithium ion conducting (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloys was developed using trimethylaluminum, lithium hexamethyldisilazide (LiHMDS) and hydrogen fluoride derived from HF-pyridine solution. ALD of LiF was studied using in situ quartz crystal microbalance (QCM) and in situ quadrupole mass spectrometer (QMS) at reaction temperatures between 125°C and 250°C. A mass gain per cycle of 12 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C and decreased at higher temperatures. QMS detected FSi(CH<sub>3</sub>)<sub>3</sub> as a reaction byproduct instead of HMDS at 150°C. LiF ALD showed self-limiting behavior. Ex situ measurements using X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) showed a growth rate of 0.5-0.6 Å/cycle, in good agreement with the in situ QCM measurements.</div><div>ALD of lithium ion conducting (AlF3)(LiF)x alloys was also demonstrated using in situ QCM and in situ QMS at reaction temperatures at 150°C A mass gain per sequence of 22 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C. Ex situ measurements using XRR and SE showed a linear growth rate of 0.9 Å/sequence, in good agreement with the in situ QCM measurements. Stoichiometry between AlF<sub>3</sub> and LiF by QCM experiment was calculated to 1:2.8. XPS showed LiF film consist of lithium and fluorine. XPS also showed (AlF<sub>3</sub>)(LiF)x alloy consists of aluminum, lithium and fluorine. Carbon, oxygen, and nitrogen impurities were both below the detection limit of XPS. Grazing incidence X-ray diffraction (GIXRD) observed that LiF and (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film have crystalline structures. Inductively coupled plasma mass spectrometry (ICP-MS) and ionic chromatography revealed atomic ratio of Li:F=1:1.1 and Al:Li:F=1:2.7: 5.4 for (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film. These atomic ratios were consistent with the calculation from QCM experiments. Finally, lithium ion conductivity (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film was measured as σ = 7.5 × 10<sup>-6</sup> S/cm.</div>

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

PROPUESTA DE CONSERVACIÓN DE TRES ESPECIES MEXICANAS DE PICEA EN PELIGRO DE EXTINCIÓN

2015 ◽  
Vol 38 (3) ◽  
pp. 235 ◽  
Author(s):  
Eduardo Mendoza-Maya ◽  
Judith Espino-Espino ◽  
Carmen Z. Quiñones-Pérez ◽  
Celestino Flores-López ◽  
Christian Wehenkel ◽  
...  
Keyword(s):  
Ex Situ

Picea mexicana Martínez, P. chihuahuana Martínez y P. martinezii Patterson son especies endémicas de México en peligro de extinción. Se presenta una síntesis de su situación actual y una propuesta de manejo para su conservación in situ y ex situ, con base en la diversidad y estructura genética de las poblaciones y la ubicación de las áreas en donde se predice existirá el hábitat climático que les es propicio en el futuro (años 2030, 2060 y 2090; al promediar los modelos Canadiense, Hadley y Geofísica de Fluidos con escenarios de emisiones A y B). Para la conservación in situ se plantea la protección, el incremento de la diversidad genética y la expansión de las tres únicas poblaciones de P. mexicana, las cuatro únicas de P. martinezii y ocho poblaciones designadas prioritarias de las 40 poblaciones de P. chihuahuana, mediante la plantación de individuos originados de otras poblaciones hasta alcanzar un tamaño mínimo de población genéticamente viable (entre 1035 a 3836 individuos). Para la conservación ex situ se propone el establecimiento de poblaciones en sitios fuera del rango de distribución natural de las especies, en donde se ha proyectado que ocurrirá el clima que les es propicio, con al menos 3606 individuos de P. mexicana en el volcán Cofre de Perote, Veracruz; 2431 individuos de P. chihuahuana en el municipio de Guanaceví, Durango; y 3092 individuos de P. martinezii en la región de Tlatlauquitepec, Puebla, con plantas originadas de una mezcla de semillas colectadas de árboles al azar de poblaciones específicas.

scholarly journals Hot Workability of 300M Steel Investigated by In Situ and Ex Situ Compression Tests

Metals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 880 ◽  
Author(s):  
Rongchuang Chen ◽  
Haifeng Xiao ◽  
Min Wang ◽  
Jianjun Li
Keyword(s):  
Flow Stress ◽  
Strain Rate ◽  
Hot Working ◽  
Ex Situ ◽  
Lower Strain Rate ◽  
Hot Workability ◽  
Compression Tests ◽  
300M Steel ◽  
Lower Strain

In this work, hot compression experiments of 300M steel were performed at 900–1150 °C and 0.01–10 s−1. The relation of flow stress and microstructure evolution was analyzed. The intriguing finding was that at a lower strain rate (0.01 s−1), the flow stress curves were single-peaked, while at a higher strain rate (10 s−1), no peak occurred. Metallographic observation results revealed the phenomenon was because dynamic recrystallization was more complete at a lower strain rate. In situ compression tests were carried out to compare with the results by ex situ compression tests. Hot working maps representing the influences of strains, strain rates, and temperatures were established. It was found that the power dissipation coefficient was not only related to the recrystallized grain size but was also related to the volume fraction of recrystallized grains. The optimal hot working parameters were suggested. This work provides comprehensive understanding of the hot workability of 300M steel in thermal compression.

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