scholarly journals Thermoelectric properties of pulsed current sintered nanocrystalline Al-doped ZnO by chemical vapour synthesis

2015 ◽  
Vol 3 (1) ◽  
pp. 189-197 ◽  
Author(s):  
Devendraprakash Gautam ◽  
Markus Engenhorst ◽  
Carolin Schilling ◽  
Gabi Schierning ◽  
Roland Schmechel ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Elevated Temperatures ◽  
Chemical Vapour ◽  
Pulsed Current ◽  
Oxide Thermoelectric Material ◽  
Doped Zno ◽  
Chemical Vapour Synthesis

ZnO is a promising n-type oxide thermoelectric material, which is stable in air at elevated temperatures.

scholarly journals Localized double phonon scattering and DOS induced thermoelectric enhancement of degenerate nonstoichiometric Li1−xNbO2 compounds

RSC Advances ◽  
2017 ◽  
Vol 7 (84) ◽  
pp. 53255-53264 ◽  
Author(s):  
Jamil Ur Rahman ◽  
Nguyen Van Du ◽  
Gul Rahman ◽  
V. M. García-Suárez ◽  
Won-Seon Seo ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Significant Role ◽  
Phonon Scattering ◽  
Thermoelectric Performance ◽  
Oxide Thermoelectric Material ◽  
P Type

We report the synthesis and thermoelectric properties of a new p-type oxide thermoelectric material (Li1−xNbO2, with x = 0–0.6), in which Li-vacancies play a significant role in the enhancement of the thermoelectric performance.

Multiple doped ZnO with enhanced thermoelectric properties

2021 ◽  
Vol 41 (7) ◽  
pp. 4182-4188
Author(s):  
BeiBei Zhu ◽  
Cong Chen ◽  
ZhiChao Yao ◽  
JiaYi Chen ◽  
Chuang Jia ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Doped Zno

Thermoelectric properties of Al-doped ZnO: experiment and simulation

2016 ◽  
Vol 37 (9) ◽  
pp. 092002 ◽  
Author(s):  
S. Jantrasee ◽  
P. Moontragoon ◽  
S. Pinitsoontorn
Keyword(s):  
Thermoelectric Properties ◽  
Doped Zno ◽  
Experiment And Simulation

Mechanisms for Defect Creation and Removal in Hydrogenated and Deuterated Amorphous Silicon Studied using Thin Film Transistors

2006 ◽  
Vol 910 ◽  
Author(s):  
Andew Flewitt ◽  
Shufan Lin ◽  
William I Milne ◽  
Ralf B Wehrspohn ◽  
Martin J Powell
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Elevated Temperatures ◽  
Chemical Vapour ◽  
Rf Plasma ◽  
Gate Bias ◽  
Removal Process ◽  
Defect Creation

AbstractIt has been widely observed that thin film transistors (TFTs) incorporating an hydrogenated amorphous silicon (a-Si:H) channel exhibit a progressive shift in their threshold voltage with time upon application of a gate bias. This is attributed to the creation of metastable defects in the a-Si:H which can be removed by annealing the device at elevated temperatures with no bias applied to the gate, causing the threshold voltage to return to its original value. In this work, the defect creation and removal process has been investigated using both fully hydrogenated and fully deuterated amorphous silicon (a-Si:D) TFTs. In both cases, material was deposited by rf plasma enhanced chemical vapour deposition over a range of gas pressures to cover the a-g transition. The variation in threshold voltage as a function of gate bias stressing time, and annealing time with no gate bias, was measured. Using the thermalisation energy concept, it has been possible to quantitatively determine the distribution of energies required for defect creation and removal as well as the associated attempt-to-escape frequencies. The defect creation and removal process in a-Si:H is then discussed in the light of these results.

scholarly journals Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

2018 ◽  
Vol 6 (3) ◽  
pp. 588-597 ◽  
Author(s):  
Dominic B. Potter ◽  
Michael J. Powell ◽  
Ivan P. Parkin ◽  
Claire J. Carmalt
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Zno Thin Films ◽  
Glass Substrates ◽  
Doped Zno ◽  
Indium Gallium ◽  
Co Doped

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD).

Thermoelectric transport in conductive poly(3,4-ethylenedioxythiophene)

2021 ◽  
Author(s):  
Meng Li ◽  
Zuzhi Bai ◽  
Xiao Chen ◽  
Cong-Cong Liu ◽  
Jing-Kun Xu ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Flexible Electronics ◽  
Theoretical Research ◽  
Thermoelectric Transport ◽  
The Future ◽  
Basic Physics ◽  
Insight Into ◽  
Theory And Experiment

Abstract Poly(3,4-ethylenedioxythiophene) (PEDOT) has proved its quite competitive thermoelectric properties in flexible electronics with its excellent electrical and mechanical properties. Since the early discovery of PEDOT, considerable experimental progress has been achieved in optimizing and improving thermoelectric properties as a promising organic thermoelectric material (OTE). Among them, theoretical research has made significant contributions to its development. Here the basic physics of conductive PEDOT are reviewed based on the combination of theory and experiment. Its purpose is to provide a new insight into the development of PEDOT, so as to effectively design and preparation of advanced thermoelectric PEDOT material in the future.

scholarly journals Impact of the iron substitution on the thermoelectric properties of Co 1− x Fe x S 2 ( x  ≤ 0.30)

2019 ◽  
Vol 377 (2152) ◽  
pp. 20180337 ◽  
Author(s):  
Ulises Acevedo Salas ◽  
Ismail Fourati ◽  
Jean Juraszek ◽  
Fabienne Richomme ◽  
Denis Pelloquin ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Power Factor ◽  
Room Temperature ◽  
Low Carbon ◽  
Energy Materials ◽  
Work Samples ◽  
Lattice Part

The strong interplay between magnetism and transport can tune the thermoelectric properties in chalcogenides and oxides. In the case of ferromagnetic CoS 2 pyrite, it was previously shown that the power factor is large at room temperature, reaching 1 mW m −1  K −2 and abruptly increases for temperatures below the Curie transition ( T C ), an increase potentially due to a magnonic effect on the Seebeck ( S ) coefficient. The too large thermal conductivity approximately equal to 10.5 W m −1  K −1 at room temperature prevents this pyrite from being a good thermoelectric material. In this work, samples belonging to the Co 1− x Fe x S 2 pyrite family ( x  = 0, 0.15 and 0.30) have thus been investigated in order to modify the thermal properties by the introduction of disorder on the Co site. We show here that the thermal conductivity can indeed be reduced by such a substitution, but that this substitution predominantly induces a reduction of the electronic part of the thermal conductivity and not of the lattice part. Interestingly, the magnonic contribution to S below T C disappears as x increases, while at high T , S tends to a very similar value (close to −42 µV K −1 ) for all the samples investigated. This article is part of a discussion meeting issue ‘Energy materials for a low carbon future’.

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