The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices
2015 ◽
Vol 3
(34)
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pp. 8804-8809
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Keyword(s):
P Type
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This communication reports for the first time, the impact of device geometry on the stress-dependent offset voltage of single crystal p-type 3C–SiC four terminal devices.