Effect of Fe ion implantation on the thermoelectric properties and electronic structures of CoSb3 thin films

The influence of substrate type in boosting thermoelectric properties of co-evaporated Bi2Te3 and Sb2Te3 films (with 400 nm-thick) is here reported. Optimized power factor values are 2.7 × 10−3 W K−2 m−1 and 1.4 × 10−3 W K−2 m−1 for flexible Bi2Te3 and Sb2Te3 films, respectively. This is an important result as it is at least 2 times higher than the power factor found in the literature for flexible Bi2Te3 and Sb2Te3 films. A flexible infrared thermopile sensor was developed with high detectivity (2.50 × 107 cm √HzW−1).

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Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

Journal of Nanomaterials ◽

10.1155/2013/201017 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 8

Author(s):

Jyun-Min Lin ◽

Ying-Chung Chen ◽

Chi-Pi Lin

Keyword(s):

Thin Films ◽

Seebeck Coefficient ◽

Thermoelectric Properties ◽

Power Factor ◽

Room Temperature ◽

Annealing Temperature ◽

Thermal Evaporation ◽

Thermal Evaporation Method ◽

Si Substrates ◽

Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

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Decrease in Work Function of Boron Ion-Implanted ZnO Thin Films

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.086 ◽

2007 ◽

Vol 7 (11) ◽

pp. 4021-4024 ◽

Cited By ~ 4

Author(s):

Gi-Seok Heo ◽

Sang-Jin Hong ◽

Jong-Woon Park ◽

Bum-Ho Choi ◽

Jong-Ho Lee ◽

...

Keyword(s):

Thin Films ◽

Ion Implantation ◽

Work Function ◽

Carrier Density ◽

Carrier Mobility ◽

Optical Transmittance ◽

Zno Thin Films ◽

Electrical And Optical Properties ◽

Visible Wavelength Range ◽

Ion Implanted

We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA)time, while decreasing as the ion dose increases. Without any RTA process, the variation of the carrier density is insensitive to the ion dose. With the RTA process, however, the carrier density of the implanted films increases and approaches that of the un-implanted ZnO film as the ion dose increases. On the other hand, the carrier mobility is shown to decrease with increasing ion doses when no RTA process is applied. With the RTA process, however, there is almost no change in the mobility. We have achieved the optical transmittance as high as 87% within the visible wavelength range up to 800 nm. It is also demonstrated that the work function can be engineered by changing the ion dose during the ion implantation process. We have found that the work function decreases as the ion dose increases.

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Investigation of Structural and Thermoelectric Properties of Bismuth Selenide Thin Films

Current Physical Chemistry ◽

10.2174/1877946810999200831101239 ◽

2020 ◽

Vol 10 ◽

Author(s):

Harsha Sharma ◽

Yogesh Chandra Sharma

Keyword(s):

Thin Films ◽

Seebeck Coefficient ◽

Thermoelectric Properties ◽

Thermoelectric Material ◽

Power Factor ◽

High Performance ◽

Compositional Variation ◽

Bismuth Selenide ◽

Thermoelectric Devices ◽

Composition Ratio

Background: Thermoelectric material with high performance and low cost is the basic need of today. Bismuth selenide is a thermoelectric material. A set of bismuth selenide thin films having different stoichiometry ratio varying Bi/Se ratio from 0.123 to 0.309 have been prepared. Objective: Present work deals with the synthesis and characterization of various thin films of bismuth selenide. Thermoe-lectric properties of thin films were also investigated. Aim of this work is to investigate the effect of composition ratio on the structural and thermoelectric properties and to find out the best stoichiometry ratio of bismuth selenide thin films which can be used in application of thermoelectric devices. Method: The set of bismuth selenide thin films having different elemental compositions were prepared by employing thermal evaporation technique. Crystal structure and elemental composition of thin films were investigated by XRD and EDAX respectively. Roughness of films were analysed by AFM. Thermoelectric properties of various thin films were al-so measured. Results: XRD spectrum confirms the formation of phases formed in thin films which slightly matched with standard data. AFM results indicate that surface of films are smooth and nanoparticles are generated on surface. AFM results indicate that the surfaces of annealed thin films are smoother than as-deposited thin films. Seebeck coefficient found negative throughout the temperature rang. Power factor is also calculated by Seebeck coefficient and results reveal effect of com-position ratio on Seebeck coefficient , electrical conductivity and power factor. Thin films having the composition ratio of 0.182 exhibited the highest power factor. Conclusion: This study provides relevant basic information of the thermoelectric property of thin films. As well as pre-sents the effect of compositional variation on thermoelectric measurements. From the application point of view in the thermoelectric devices the best stoichiometric thin films out of four prepared thin films have been presented.

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Thermoelectric Properties of Zn-Sb Thin Films Grown by Ion Beam Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.538-541.154 ◽

2012 ◽

Vol 538-541 ◽

pp. 154-157

Author(s):

Peng Juan Liu ◽

Ping Fan ◽

Zhuang Hao Zheng ◽

Dong Ping Zhang ◽

Xing Min Cai ◽

...

Keyword(s):

Thin Films ◽

Seebeck Coefficient ◽

Thermoelectric Properties ◽

Power Factor ◽

Room Temperature ◽

Ion Beam ◽

Composition Analysis ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Sputter Deposited

Antimony (Sb) and zinc (Zn) bilayer was sputter-deposited at room temperature with various Zn contents by ion-beam sputtering and transformed into Antimony zinc after post thermal annealed at 573K for 60 min. A power factor of 6.18×10-4 W/mK2 at 473 K has been obtained when the sputtering time of the Zn was 20 minutes. The maximum Seebeck coefficient is 42.0 μVK-1. Composition analysis shows that the compound of SbZn is achieved and the small Seebeck coefficient is due to the deviation of stoichiometric.

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In2O3-Based Thin Films Deposited by Spray Pyrolysis as Promising Thermoelectric Material

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1043.40 ◽

2014 ◽

Vol 1043 ◽

pp. 40-44 ◽

Cited By ~ 1

Author(s):

Ghenadii Korotcenkov ◽

V. Brinzari ◽

L. Trakhtenberg ◽

B.K. Cho

Keyword(s):

Thin Films ◽

Spray Pyrolysis ◽

Thermoelectric Properties ◽

Thermoelectric Material ◽

Power Factor ◽

Promising Material ◽

Spray Pyrolysis Method ◽

Metal Chlorides ◽

Water Solutions ◽

Pyrolysis Method

Structural, electrophysical and thermoelectric properties of nanoscaled In2O3films doped by Sn and Zn were studied. Thin films based on In2O3-SnO2and In2O3-SnO2-ZnO systems were prepared by spray pyrolysis method from water solutions of metal chlorides. It was confirmed that In2O3-based films, especially the In2O3:Sn ones, are promising material for applications related to thermoelectricity. The power factor of obtained films was found to be on the level of the best samples prepared on the base of ITO system.

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Enhanced thermoelectric properties of Al-doped ZnO thin films

MRS Proceedings ◽

10.1557/opl.2013.989 ◽

2013 ◽

Vol 1543 ◽

Author(s):

P. Mele ◽

S. Saini ◽

H. Abe ◽

H. Honda ◽

K. Matsumoto ◽

...

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Low Temperature ◽

Thermoelectric Properties ◽

Power Factor ◽

Pulsed Laser ◽

Laser Deposition ◽

Superior Performance ◽

Zno Thin Films ◽

Doped Zno

ABSTRACTWe have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C – 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

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Interplay Among Thermoelectric Properties, Atmospheric Stability, and Electronic Structures in Solution‐Deposited Thin Films of P(Na X [Niett])

Advanced Electronic Materials ◽

10.1002/aelm.201901172 ◽

2020 ◽

Vol 6 (3) ◽

pp. 1901172

Author(s):

Sunbin Hwang ◽

William J. Potscavage ◽

Tae‐Wook Kim ◽

Chihaya Adachi

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

Electronic Structures ◽

Atmospheric Stability

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Post Annealing Studies of C60 Ion Implanted Thin Films

MRS Proceedings ◽

10.1557/proc-650-r9.8/o14.8 ◽

2000 ◽

Vol 650 ◽

Author(s):

Nethaji Dharmarasu ◽

Kannan L. Narayanan ◽

Nabuaki Kojima ◽

Yoshio Ohshita ◽

Masafumi Yamaguchi

Keyword(s):

Thin Films ◽

Ion Implantation ◽

Optical Absorption Coefficient ◽

Carbon Phase ◽

Optical Gap ◽

Conductivity Type ◽

Implantation Temperature ◽

P Type ◽

Induced Defects ◽

Ion Implanted

ABSTRACTPhysical properties of multiple-energy B-ion implanted C60 thin films were investigated for various doses. Fourier Transform Infra-red Spectroscopy (FTIR) results indicate the structural transformation of C60 to amorphous carbon phase during implantation. The conductivity type of the implanted films is found to be p-type and the conductivity measurements reveal a dramatic increase in the conductivity with ion implantation. Temperature dependent conductivity shows the semiconducting nature of the B-ion implanted films. The optical absorption coefficient and optical gap of the implanted films have been observed as a function of B-ion dose. Measurements on implanted films subjected to thermal annealing indicate the removal of the defects caused during the implantation. Ion implantation-induced defects are found to partially annihilate with the annealing temperature. Electrical conductivity and optical gap are determined in the post-implanted films. The observation of the systematic increase in the conductivity of the annealed films is due to the removal of the defects and the formation of defect free boron impurity acceptor.

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