A multilevel vertical photonic memory transistor based on organic semiconductor/inorganic perovskite quantum dot blends

2020 ◽  
Vol 8 (8) ◽  
pp. 2861-2869 ◽  
Author(s):  
Huihuang Yang ◽  
Yujie Yan ◽  
Xiaomin Wu ◽  
Yaqian Liu ◽  
Qizhen Chen ◽  
...  

A vertical photonic memory transistor based on organic semiconductor/inorganic perovskite quantum dots blends was fabricated, which presents new routes for low operational conditions for high-performance photonic memory with high storage density.

Nanoscale ◽  
2021 ◽  
Author(s):  
Shao-Huan Hong ◽  
Shakil N. Afraj ◽  
Ping-Yu Huang ◽  
Yi-Zi Yeh ◽  
Shih-Huang Tung ◽  
...  

Low-dimensional all-inorganic perovskite quantum dots (QDs) have been increasingly developed as photo-sensing materials in the field of photodetectors because of their strong light-absorption capability and broad bandgap tunability. Here, solution-processed...


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  

AbstractAll-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.


2019 ◽  
Vol 10 (41) ◽  
pp. 9530-9541 ◽  
Author(s):  
Dibyendu Ghosh ◽  
Dhirendra K. Chaudhary ◽  
Md. Yusuf Ali ◽  
Kamlesh Kumar Chauhan ◽  
Sayan Prodhan ◽  
...  

Grain boundaries in bulk perovskite films are considered as giant trapping sites for photo-generated carriers. Surface engineering via inorganic perovskite quantum dots has been employed for creating monolithically grained, pin-hole free perovskite films.


2017 ◽  
Vol 29 (44) ◽  
pp. 1704062 ◽  
Author(s):  
Yantao Chen ◽  
Yingli Chu ◽  
Xiaohan Wu ◽  
Wei Ou-Yang ◽  
Jia Huang

2019 ◽  
Vol 7 (11) ◽  
pp. 6134-6142 ◽  
Author(s):  
Kai Shen ◽  
Xiao Li ◽  
Hao Xu ◽  
Mingqing Wang ◽  
Xiao Dai ◽  
...  

ZnO nanoparticle decorated all-inorganic perovskite quantum dots exhibit improved photoresponse and long-term stability.


2020 ◽  
Vol 7 (11) ◽  
pp. 2000360
Author(s):  
Muhammad Imran Saleem ◽  
Shengyi Yang ◽  
Ruonan Zhi ◽  
Muhammad Sulaman ◽  
Perumal Veeramalai Chandrasekar ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 22766-22774 ◽  
Author(s):  
Ruxue Li ◽  
Zhipeng Wei ◽  
Haixia Zhao ◽  
Hongrui Yu ◽  
Xuan Fang ◽  
...  

All-inorganic perovskite quantum dots (QDs) have been considered as outstanding candidates for high-performance optoelectronic device applications.


Author(s):  
Haibo Zeng ◽  
Dandan Yang ◽  
Zhiheng Xu ◽  
Chunhui Gong ◽  
Xiaoming Li ◽  
...  

One of the main reasons for the stability issue of inorganic perovskite quantum dots (PQDs) is the fragile protection of surface ligands. Here, an armor-like passivation strategy is proposed to...


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