scholarly journals Unraveling the antisolvent dripping delay effect on the Stranski–Krastanov growth of CH3NH3PbBr3 thin films: a facile route for preparing a textured morphology with improved optoelectronic properties

2020 ◽  
Vol 22 (45) ◽  
pp. 26592-26604 ◽  
Author(s):  
Jitendra Kumar ◽  
Ramesh Kumar ◽  
Kyle Frohna ◽  
Dhanashree Moghe ◽  
Samuel D. Stranks ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nucleation And Growth ◽  
Optoelectronic Properties ◽  
Film Morphology ◽  
Delay Effect ◽  
Controlled Nucleation ◽  
Facile Route

Controlled nucleation and growth by delaying the antisolvent dripping time leads to the formation of a textured perovskite thin film morphology with improved optoelectronic properties.

scholarly journals Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films

Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 112
Author(s):  
Qais M. Al-Bataineh ◽  
Mahmoud Telfah ◽  
Ahmad A. Ahmad ◽  
Ahmad M. Alsaad ◽  
Issam A. Qattan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Mixed Oxide ◽  
Visible Region ◽  
Functional Materials ◽  
Crystal Defects ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Pure Ceo2

We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.

scholarly journals Orientation transitions during the growth of imine covalent organic framework thin films

2017 ◽  
Vol 5 (21) ◽  
pp. 5090-5095 ◽  
Author(s):  
H. Wang ◽  
B. He ◽  
F. Liu ◽  
C. Stevens ◽  
M. A. Brady ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Experimental Observation ◽  
Growth Kinetic ◽  
Film Growth ◽  
Nucleation And Growth ◽  
Thin Film Growth ◽  
Covalent Organic Framework ◽  
Kinetic Processes ◽  
Organic Framework

The first experimental observation of a rare re-entrant transition during COF thin film growth reveals independent nucleation and growth kinetic processes.

Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Vapor

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

scholarly journals Ceramic Oxide Thin Film Formation Utilizing Biological Processes

1989 ◽  
Vol 174 ◽  
Author(s):  
B. J. Tarasevich ◽  
P. C. Rieke
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Formation ◽  
Nucleation And Growth ◽  
Oxide Thin Film ◽  
Biological Processes ◽  
Oxide Materials ◽  
Ceramic Oxide ◽  
Mineralization Processes ◽  
Properties Of Materials

AbstracMineralization processes used by bioorganisms have been adapted for the nucleation and growth of ceramic oxide thin films onto surfaces from aqueous solutions. These strategies include the use of surfaces derivatized with specific functional groups that control the nucleation and growth and properties of materials deposited. Iron oxide materials were deposited onto functionalized polystyrene surfaces, resulting in the formation of thin films composed of densely packed, nanometer-sized crystallites. Evidence for the formation of oriented crystallites was found. This process may have advantages over conventional thin film processing methods due to the ability to systematically control properties of materials deposited.

Potentiostatic controlled nucleation and growth modes of electrodeposited cobalt thin films on n-Si(1 1 1)

2016 ◽  
Vol 75 (3) ◽  
pp. 30301 ◽  
Author(s):  
Fayçal Mechehoud ◽  
Abdelbacet Khelil ◽  
Nour Eddine Hakiki ◽  
Jean-Luc Bubendorff
Keyword(s):  
Thin Films ◽  
Nucleation And Growth ◽  
Growth Modes ◽  
Cobalt Thin Films ◽  
Controlled Nucleation

scholarly journals Fullerene Aggregation in Thin Films of Polymer Blends for Solar Cell Applications

2018 ◽  
Author(s):  
Camilla Lindqvist ◽  
Ellen Moons ◽  
Jan van Stam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Emission Band ◽  
Fluorescence Spectra ◽  
Emission Peak ◽  
Fullerene Derivative ◽  
Broad Emission Band ◽  
Film Morphology ◽  
Broad Emission ◽  
Main Emission Peak

We report on the effects of the film morphology on the fluorescence spectra for a thin film including a quinoxaline-based co-polymer (TQ1) and a fullerene derivative (PC70BM). The ratio between the polymer and the fullerene derivative, as well as the processing solvent were varied. Beside the main emission peak at 700 nm in the fluorescence spectra of thin films of this phase-separated blend, a broad emission band is observed with a maximum at 520 - 550 nm. The intensity of this emission band decreases with an increasing degree of mixing in the film and becomes most prominent in thicker films, films with high PC70BM content, and films that were spin-coated from solvents with lower PC70BM solubility. We assign this emission band to aggregated PC70BM.

scholarly journals Vapor transport deposition of Sb2Se3 thin films for photodetector application

2020 ◽  
Vol 10 (04) ◽  
pp. 2050016
Author(s):  
Sen Wen ◽  
Xingtian Yin ◽  
Haixia Xie ◽  
Yuxiao Guo ◽  
Jie Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Temperature ◽  
Optoelectronic Devices ◽  
Vapor Transport ◽  
Film Morphology ◽  
Maximum Value ◽  
Application Potential ◽  
Antimony Selenide ◽  
Vapor Transport Deposition

Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300–1000[Formula: see text]nm with a maximum value of 312[Formula: see text]mA W[Formula: see text] at 750[Formula: see text]nm.

scholarly journals Water-triggered spontaneous surface patterning in thin films of mexylaminotriazine molecular glasses

2015 ◽  
Vol 3 (18) ◽  
pp. 4729-4736 ◽  
Author(s):  
Elizabeth Melito ◽  
Audrey Laventure ◽  
Gabriela Aldea-Nunzi ◽  
Christian Pellerin ◽  
Erwin Buncel ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Patterning ◽  
Film Morphology ◽  
Molecular Glasses ◽  
Nanoscale Level

Surface patterning that occurs spontaneously during the formation of a thin film is a powerful tool for controlling film morphology at the nanoscale level because it avoids the need for further processing.

scholarly journals Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Jae Hyo Park ◽  
Hyung Yoon Kim ◽  
Gil Su Jang ◽  
Ki Hwan Seok ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundaries ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ferroelectric Thin Film ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Test Results ◽  
Effect Transistor

Abstract The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films.

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