Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

Wafer-size SnSe thin films with high uniformity and high crystal quality were grown by magnetron sputtering technique, and exhibit a highly sensitive to a broadband wavelength with high responsivity of 277.3 AW−1 and detectivity of 7.6 × 1011 Jones.

Download Full-text

Properties of Cu2ZnSnS4 thin films prepared by magnetron sputtering and sulfurizing the precursors with different stacking sequences

Modern Physics Letters B ◽

10.1142/s0217984914502108 ◽

2014 ◽

Vol 28 (26) ◽

pp. 1450210 ◽

Cited By ~ 2

Author(s):

Zhong Hua ◽

Xiangcheng Meng ◽

Yaming Sun ◽

Wanqiu Yu ◽

Dong Long

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

X Ray Diffraction ◽

Electrical And Optical Properties ◽

X Ray ◽

Glass Substrates ◽

Stacking Order ◽

Microstructure Morphology ◽

Hall Effect Measurements ◽

Uv Visible

The stacked precursors were deposited on glass substrates from Cu , Sn and ZnS targets by magnetron sputtering with six kinds of stacking sequences. The precursors were sulfurized at 500°C for 2 h in an atmosphere of sulfur. The properties of thin films such as microstructure, morphology, chemical composition, electrical and optical properties of the films were investigated by X-ray diffraction (XRD), scanning election microscopy (SEM), energy dispersive spectroscopy (EDS), Hall effect measurements and UV-visible spectrophotometer (UV-VIS). The results show that the thin film after sulfurizing at 500°C using the stacking order of Cu / Sn / ZnS /glass is the best absorber layer for Cu 2 ZnSnS 4 thin films solar cell among the six kinds of stacking sequences.

Download Full-text

High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

Journal of Materials Chemistry C ◽

10.1039/c9tc03613j ◽

2019 ◽

Vol 7 (38) ◽

pp. 11834-11844 ◽

Cited By ~ 6

Author(s):

Shun Han ◽

Xiaoling Huang ◽

Mingzhi Fang ◽

Weiguo Zhao ◽

Shijie Xu ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

High Performance ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Sensitive Material ◽

Uv Detectors ◽

Highly Sensitive ◽

Solar Blind

Room-temperature-fabricated amorphous Ga2O3 is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology.

Download Full-text

INFLUENCE OF THE SUBSTRATE TEMPERATURE ON TiO2 THIN LAYERS DEPOSITED BY THE DIRECT CURRENT MAGNETRON SPUTTERING TECHNOLOGY

Surface Review and Letters ◽

10.1142/s0218625x20500547 ◽

2020 ◽

pp. 2050054

Author(s):

RADOUANE GRAINE ◽

KHOULOUD BEDOUD ◽

NADJETTE SEHAB ◽

DJAMEL ZELMATI

Keyword(s):

Thin Films ◽

Refractive Index ◽

Optical Properties ◽

Magnetron Sputtering ◽

Direct Current ◽

Extinction Coefficient ◽

Future Application ◽

X Ray ◽

Uv Visible ◽

Substrate Temperatures

In this study, Anatase thin films of titanium dioxide (TiO[Formula: see text] are deposited by the Direct Current (DC) magnetron sputtering technique on glass substrate for future application in gas sensors. In our work, we focused and discussed the effect of various substrate temperatures [Formula: see text]C, [Formula: see text]C and [Formula: see text]C, and film thicknesses 142, 220 and 410[Formula: see text]nm, respectively, in order to study the structural and optical properties of the TiO2 thin films. The crystalline structure and optical properties of TiO2 nanoparticles were investigated using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Atomic Force Microscopy (AFM), Raman spectroscopy and UV–visible spectroscopy. The formation of the Anatase TiO2 with Tetragonal crystal structure has been confirmed with XRD. UV–visible spectrophotometry characterization of the developed thin films showed that all the films had an optical transmission greater than 92% in the visible region. In addition, the obtained direct and indirect optical band gaps using the Tauc plot are 3.66, 3.34[Formula: see text]eV at [Formula: see text]C 3.74, 3.37[Formula: see text]eV at [Formula: see text]C and 3.71, 3.37[Formula: see text]eV at [Formula: see text]C, respectively. Forouhi–Bloomer (FB) physical model has been used to obtain the refractive index and extinction coefficient by fitting theoretical transmittance curves to experimental ones. The optical refractive index is found to vary from 2.350 for [Formula: see text]C, 2.1499 for [Formula: see text]C and 2.1420 for [Formula: see text]C. Moreover, we have obtained an extinction coefficient [Formula: see text] ([Formula: see text] of around [Formula: see text] for both substrate temperatures [Formula: see text]C and [Formula: see text]C, and around [Formula: see text] for the [Formula: see text]C.

Download Full-text

Influence of Mg, Cu, and Ni Dopants on Amorphous TiO2 Thin Films Photocatalytic Activity

Materials ◽

10.3390/ma13040886 ◽

2020 ◽

Vol 13 (4) ◽

pp. 886 ◽

Cited By ~ 4

Author(s):

Vytautas Kavaliunas ◽

Edvinas Krugly ◽

Mantas Sriubas ◽

Hidenori Mimura ◽

Giedrius Laukaitis ◽

...

Keyword(s):

Thin Films ◽

Photocatalytic Activity ◽

Magnetron Sputtering ◽

Efficiency Analysis ◽

Tio2 Thin Films ◽

Doped Tio2 ◽

High Uniformity ◽

Concentration Peak ◽

Amorphous Tio2 ◽

Peak Value

The present study investigates Mg (0 ÷ 17.5 wt %), Cu (0 ÷ 21 wt %) and Ni (0 ÷ 20.2 wt %) dopants (M-doped) influence on photocatalytic activity of amorphous TiO2 thin films. Magnetron sputtering was used for the deposition of M-doped TiO2 thin films. According to SEM/EDS surface analysis, the magnetron sputtering technique allows making M-doped TiO2 thin films with high uniformity and high dopant dispersion. Photocatalysis efficiency analysis was set in oxalic acid under UV irradiation. In accordance with the TOC (total organic carbon) measurements followed by the apparent rate constant (kapp) results, the dopants’ concentration peak value was dopant-dependent; for Mg/TiO2, it is 0.9% (kapp—0.01866 cm−1), for Cu/TiO2, it is 0.6% (kapp—0.02221 cm−1), and for Ni/TiO2, it is 0.5% (kapp—0.01317 cm−1). The obtained results clearly state that a concentration of dopants in TiO2 between 0.1% and 0.9% results in optimal photocatalytic activity.

Download Full-text