The strategies of filament control for improving the resistive switching performance

The recent developments of filament control in resistive switching devices including electrode optimization, switching layer optimization and channel design are reviewed.

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Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory

Applied Physics Letters ◽

10.1063/1.5066586 ◽

2019 ◽

Vol 114 (1) ◽

pp. 012101 ◽

Cited By ~ 13

Author(s):

Muhammad Ismail ◽

Shafqat-Un Nisa ◽

Anwar Manzoor Rana ◽

Tahira Akbar ◽

Jinju Lee ◽

...

Keyword(s):

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Switching Performance ◽

Switching Layer

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Selection of Switching Layer Materials for Memristive Devices: from Traditional Oxide to 2D Materials

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1027.107 ◽

2021 ◽

Vol 1027 ◽

pp. 107-114

Author(s):

Yi Da Wang

Keyword(s):

Electrical Properties ◽

Resistive Switching ◽

2D Materials ◽

Computing System ◽

Von Neumann ◽

Practical Applications ◽

Switching Layer ◽

Selection Of ◽

Switching Devices

Redox-based resistive switching devices (ReRAM) provide new hardware concepts which make it possible to break the von Neumann bottleneck and build a new computing system in the information. However, the materials for switching layers are various and mechanisms are quite different, these will block the further exploration for practical applications. This review tends to demonstrate different kinds of memristors fabricated with various materials, such as oxide, nitride and 2D materials. The electrical properties of those based on different materials are compared and the advantages of each are listed. It would give a guidance to the selection of materials of memristors.

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A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices

MRS Proceedings ◽

10.1557/opl.2011.986 ◽

2011 ◽

Vol 1337 ◽

Cited By ~ 1

Author(s):

S.M. Bishop ◽

B.D. Briggs ◽

K.D. Leedy ◽

S. Addepalli ◽

N.C. Cady

Keyword(s):

Metal Oxide ◽

Metal Oxides ◽

Resistive Switching ◽

Electrode Material ◽

Metal Insulator ◽

Switching Performance ◽

Metal Insulator Metal ◽

Non Volatile Memory ◽

And Behavior ◽

Switching Devices

ABSTRACTMetal-insulator-metal (MIM) resistive switching devices are being pursued for a number of applications, including non-volatile memory and high density/low power computing. Reported resistive switching devices vary greatly in the choice of metal oxide and electrode material. Importantly, the choice of both the metal oxide and electrode material can have significant impact on device performance, their ability to switch, and the mode of switching (unipolar, bipolar, nonpolar) that results. In this study, three metal oxides (Cu2O, HfOx, and TiOx) were deposited onto copper bottom electrodes (BEs). Four different top electrode (TE) materials (Ni, Au, Al, and Pt) were then fabricated on the various metal oxides to form MIM structures. Devices were then characterized electrically to determine switching performance and behavior. Our results show that the metal TE plays a large role in determining whether or not the MIM structure will switch resistively and what mode of switching (unipolar, bipolar, or non-polar) is observed.

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Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽

10.1039/d0ra05209d ◽

2020 ◽

Vol 10 (69) ◽

pp. 42249-42255

Author(s):

Xiaohan Wu ◽

Ruijing Ge ◽

Yifu Huang ◽

Deji Akinwande ◽

Jack C. Lee

Keyword(s):

Resistive Switching ◽

Constant Voltage ◽

Switching Device ◽

Current Stress ◽

Electric Stress ◽

State Evolution ◽

Conductive Bridge ◽

Resistance State ◽

Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

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Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3084554 ◽

2021 ◽

pp. 1-7

Author(s):

S. Biswas ◽

A. D. Paul ◽

P. Das ◽

P. Tiwary ◽

H. J. Edwards ◽

...

Keyword(s):

Resistive Switching ◽

Interfacial Layer ◽

Switching Performance

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Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

Scientific Reports ◽

10.1038/s41598-021-89315-z ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Sera Kwon ◽

Min-Jung Kim ◽

Kwun-Bum Chung

Keyword(s):

Resistive Switching ◽

High Performance ◽

Sio2 Nanoparticles ◽

Visible Range ◽

Resistive State ◽

Switching Device ◽

Structural Density ◽

Multi Level ◽

Switching Characteristics ◽

Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

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Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free Cs3Cu2I5 Perovskite Memory

The Journal of Physical Chemistry Letters ◽

10.1021/acs.jpclett.0c03763 ◽

2021 ◽

Vol 12 (7) ◽

pp. 1973-1978

Author(s):

Fanju Zeng ◽

Yongqian Tan ◽

Wei Hu ◽

Xiaosheng Tang ◽

Zhongtao Luo ◽

...

Keyword(s):

Resistive Switching ◽

Lead Free ◽

Hydroiodic Acid ◽

Switching Performance

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Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽

10.1039/d0ra09807h ◽

2021 ◽

Vol 11 (12) ◽

pp. 6477-6503 ◽

Cited By ~ 1

Author(s):

Manoj Kumar ◽

Sanju Rani ◽

Yogesh Singh ◽

Kuldeep Singh Gour ◽

Vidya Nand Singh

Keyword(s):

Solar Cells ◽

Band Gap ◽

Resistive Switching ◽

Gas Sensors ◽

Material Properties ◽

Topological Insulators ◽

Memory Devices ◽

Tin Selenide ◽

Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

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