Selection of Switching Layer Materials for Memristive Devices: from Traditional Oxide to 2D Materials

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1027.107 ◽

2021 ◽

Vol 1027 ◽

pp. 107-114

Author(s):

Yi Da Wang

Keyword(s):

Electrical Properties ◽

Resistive Switching ◽

2D Materials ◽

Computing System ◽

Von Neumann ◽

Practical Applications ◽

Switching Layer ◽

Selection Of ◽

Switching Devices

Redox-based resistive switching devices (ReRAM) provide new hardware concepts which make it possible to break the von Neumann bottleneck and build a new computing system in the information. However, the materials for switching layers are various and mechanisms are quite different, these will block the further exploration for practical applications. This review tends to demonstrate different kinds of memristors fabricated with various materials, such as oxide, nitride and 2D materials. The electrical properties of those based on different materials are compared and the advantages of each are listed. It would give a guidance to the selection of materials of memristors.

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Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

Applied Sciences ◽

10.3390/app10041320 ◽

2020 ◽

Vol 10 (4) ◽

pp. 1320 ◽

Cited By ~ 4

Author(s):

Xiaoyan Liu ◽

Mingmin Shi ◽

Yuhao Luo ◽

Lvyang Zhou ◽

Zhi Rong Loh ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Sustainable Development ◽

Resistive Switching ◽

Electronic Waste ◽

Electronic Devices ◽

Preparation Methods ◽

Von Neumann ◽

Environmental Friendly ◽

Switching Devices

The environmental pollution generated by electronic waste (e-waste), waste-gas, and wastewater restricts the sustainable development of society. Environmental-friendly electronics made of degradable, resorbable, and compatible thin-film materials were utilized and explored, which was beneficial for e-waste dissolution and sustainable development. In this paper, we present a literature review about the development of various degradable and disposable thin-films for electronic applications. The corresponding preparation methods were simply reviewed and one of the most exciting and promising methods was discussed: Printing electronics technology. After a short introduction, detailed applications in the environment sensors and eco-friendly devices based on these degradable and compatible thin-films were mainly reviewed, finalizing with the main conclusions and promising perspectives. Furthermore, the future on these upcoming environmental-friendly electronic devices are proposed and prospected, especially on resistive switching devices, showing great potential applications in artificial intelligence (AI) and the Internet of Thing (IoT). These resistive switching devices combine the functions of storage and computations, which can complement the off-shelf computing based on the von Neumann architecture and advance the development of the AI.

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The strategies of filament control for improving the resistive switching performance

Journal of Materials Chemistry C ◽

10.1039/d0tc03639k ◽

2020 ◽

Vol 8 (46) ◽

pp. 16295-16317

Author(s):

Teng Li ◽

Hongliang Yu ◽

Stephenie Hiu Yuet Chen ◽

Ye Zhou ◽

Su-Ting Han

Keyword(s):

Resistive Switching ◽

Channel Design ◽

Switching Performance ◽

Recent Developments ◽

Switching Layer ◽

Switching Devices

The recent developments of filament control in resistive switching devices including electrode optimization, switching layer optimization and channel design are reviewed.

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Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽

10.1039/d0ra05209d ◽

2020 ◽

Vol 10 (69) ◽

pp. 42249-42255

Author(s):

Xiaohan Wu ◽

Ruijing Ge ◽

Yifu Huang ◽

Deji Akinwande ◽

Jack C. Lee

Keyword(s):

Resistive Switching ◽

Constant Voltage ◽

Switching Device ◽

Current Stress ◽

Electric Stress ◽

State Evolution ◽

Conductive Bridge ◽

Resistance State ◽

Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

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Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

Scientific Reports ◽

10.1038/s41598-021-89315-z ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Sera Kwon ◽

Min-Jung Kim ◽

Kwun-Bum Chung

Keyword(s):

Resistive Switching ◽

High Performance ◽

Sio2 Nanoparticles ◽

Visible Range ◽

Resistive State ◽

Switching Device ◽

Structural Density ◽

Multi Level ◽

Switching Characteristics ◽

Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

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Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽

10.1039/d0ra09807h ◽

2021 ◽

Vol 11 (12) ◽

pp. 6477-6503 ◽

Cited By ~ 1

Author(s):

Manoj Kumar ◽

Sanju Rani ◽

Yogesh Singh ◽

Kuldeep Singh Gour ◽

Vidya Nand Singh

Keyword(s):

Solar Cells ◽

Band Gap ◽

Resistive Switching ◽

Gas Sensors ◽

Material Properties ◽

Topological Insulators ◽

Memory Devices ◽

Tin Selenide ◽

Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

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Zero uncertainty states in the presence of quantum memory

npj Quantum Information ◽

10.1038/s41534-021-00384-4 ◽

2021 ◽

Vol 7 (1) ◽

Author(s):

Huangjun Zhu

Keyword(s):

Uncertainty Principle ◽

Quantum States ◽

Quantum Memory ◽

System State ◽

Von Neumann ◽

Practical Applications ◽

Classical Information ◽

Fundamental Limit ◽

Minimum Uncertainty ◽

Incompatible Observables

AbstractThe uncertainty principle imposes a fundamental limit on predicting the measurement outcomes of incompatible observables even if complete classical information of the system state is known. The situation is different if one can build a quantum memory entangled with the system. Zero uncertainty states (in contrast with minimum uncertainty states) are peculiar quantum states that can eliminate uncertainties of incompatible von Neumann observables once assisted by suitable measurements on the memory. Here we determine all zero uncertainty states of any given set of nondegenerate observables and determine the minimum entanglement required. It turns out all zero uncertainty states are maximally entangled in a generic case, and vice versa, even if these observables are only weakly incompatible. Our work establishes a simple and precise connection between zero uncertainty and maximum entanglement, which is of interest to foundational studies and practical applications, including quantum certification and verification.

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Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2018.14282 ◽

2018 ◽

Vol 18 (4) ◽

pp. 2650-2656 ◽

Cited By ~ 1

Author(s):

Xuejiao Zhang ◽

Zhiwei Xu ◽

Bai Sun ◽

Jianjun Liu ◽

Yanyan Cao ◽

...

Keyword(s):

Resistive Switching ◽

Bipolar Resistive Switching ◽

Multiple State ◽

Switching Devices

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Synergetic Use of Sentinel-1 and Sentinel-2 Data for Soil Moisture Mapping at Plot Scale

Remote Sensing ◽

10.3390/rs10081285 ◽

2018 ◽

Vol 10 (8) ◽

pp. 1285 ◽

Cited By ~ 20

Author(s):

Reza Attarzadeh ◽

Jalal Amini ◽

Claudia Notarnicola ◽

Felix Greifeneder

Keyword(s):

Soil Moisture ◽

Optical Data ◽

Estimation Accuracy ◽

Support Vector ◽

Practical Applications ◽

Initial Stage ◽

Object Based ◽

Single Polarization ◽

Selection Of

This paper presents an approach for retrieval of soil moisture content (SMC) by coupling single polarization C-band synthetic aperture radar (SAR) and optical data at the plot scale in vegetated areas. The study was carried out at five different sites with dominant vegetation cover located in Kenya. In the initial stage of the process, different features are extracted from single polarization mode (VV polarization) SAR and optical data. Subsequently, proper selection of the relevant features is conducted on the extracted features. An advanced state-of-the-art machine learning regression approach, the support vector regression (SVR) technique, is used to retrieve soil moisture. This paper takes a new look at soil moisture retrieval in vegetated areas considering the needs of practical applications. In this context, we tried to work at the object level instead of the pixel level. Accordingly, a group of pixels (an image object) represents the reality of the land cover at the plot scale. Three approaches, a pixel-based approach, an object-based approach, and a combination of pixel- and object-based approaches, were used to estimate soil moisture. The results show that the combined approach outperforms the other approaches in terms of estimation accuracy (4.94% and 0.89 compared to 6.41% and 0.62 in terms of root mean square error (RMSE) and R2), flexibility on retrieving the level of soil moisture, and better quality of visual representation of the SMC map.

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