scholarly journals Tailoring Molecular Weight of Polymer Additives for Organic Semiconductors

2022 ◽  
Author(s):  
Zhengran He ◽  
Ziyang Zhang ◽  
Sheng Bi
Keyword(s):  
Molecular Weight ◽  
Binary System ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
High Performance ◽  
Electronic Devices ◽  
Polymer Additives ◽  
Flexible Substrates ◽  
Polymer Additive

A binary system comprising both an organic semiconductor and a polymer additive has attracted extensive research interests due to great potential for high-performance, solution-proccessable electronic devices on flexible substrates. The...

Green solvent-processed organic electronic devices

2020 ◽  
Vol 8 (43) ◽  
pp. 15027-15047
Author(s):  
Filippo Campana ◽  
Choongik Kim ◽  
Assunta Marrocchi ◽  
Luigi Vaccaro
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Organic Photovoltaics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Devices ◽  
Green Solvents ◽  
Green Solvent ◽  
Organic Electronic Devices ◽  
Organic Electronic

A review on the recent efforts to select green solvents for processing organic semiconductors for thin film transistors (TFT) and organic photovoltaics (OPV) applications. A guide for the safe fabrication of high-performance devices.

EVALUATION OF TECHNOLOGICAL PARAMETERS OF ASPHALT CONCRETE MIXTURES FOR THE STREET-ROAD NETWORK IN URBAN AGGROMERATIONS USING ADDITIVES OF POLYETHYLENE WITH LOW MOLECULAR WEIGHT

2021 ◽  
pp. 85-96
Author(s):  
Александр Борисович Соломенцев ◽  
Моиз Режист ◽  
Швендески Маселюс Жозеф
Keyword(s):  
Molecular Weight ◽  
Structure Formation ◽  
Dynamic Viscosity ◽  
Asphalt Concrete ◽  
Road Network ◽  
Low Molecular Weight ◽  
Polymer Additives ◽  
Polymer Additive ◽  
Technological Parameters ◽  
Concrete Mixtures

Получены значения динамической вязкости битумного вяжущего с добавками низкомолекулярного полиэтилена в температурном интервале 60…160 °С. При введении полимерных добавок в дорожный битум вязкость битума повышается. Наиболее высокие значения динамической вязкости наблюдаются у полимерной добавки Вискодор - ПВ1, это ярко выражено при расходе 4 % добавки от массы битума и при температурах ниже 130°С. Добавка неокисленного низкомолекулярного полиэтилена Honeyvell Titan 7205 увеличивает вязкость в большей степени, чем добавка окисленного полиэтилена Honeyvell Titan 7686. Определены допустимые технологические температуры асфальтобетонных смесей с полимерными добавками на этапах структурообразования асфальтобетона. We obtained the values of the dynamic viscosity of bitumen binder with additives of polyethylene with low molecular weight in the temperature range of 60…160 °C. When polymer additives are introduced into road bitumen, the viscosity of bitumen increases. The highest values of dynamic viscosity are observed for the polymer additive Viskodor - PV1, this is clearly pronounced at the consumption of 4 % of the additive based on the mass of bitumen and at temperatures below 130 °С. The additive of unoxidized low molecular weight polyethylene Honeyvell Titan 7205 increases the viscosity to a greater extent than the additive of oxidized polyethylene Honeyvell Titan 7686. We determined as well the permissible technological temperatures of asphalt concrete mixtures with polymer additives at the stages of structure formation of asphalt concrete.

Polymer additive controlled morphology for high performance organic thin film transistors

Soft Matter ◽  
2019 ◽  
Vol 15 (29) ◽  
pp. 5790-5803 ◽  
Author(s):  
Zhengran He ◽  
Jihua Chen ◽  
Dawen Li
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
High Performance ◽  
Crystal Morphology ◽  
Organic Thin Film Transistors ◽  
Bench Mark ◽  
Organic Thin Film ◽  
Polymer Additive ◽  
Controlled Morphology

In this article, we review various polymer additive based approaches to control the crystal morphology and the resultant charge transport of some bench-mark, high performance, solution crystallizable, small-molecule organic semiconductors.

scholarly journals What is Special about Silicon in Functionalised Organic Semiconductors?

2021 ◽  
Author(s):  
Karl J Thorley ◽  
Micai Benford ◽  
Yang Song ◽  
Sean R. Parkin ◽  
Chad Risko ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
High Performance ◽  
Side Chain ◽  
Carbon Side Chain ◽  
Atomic Substitution

A carbon side-chain analogue to the high-performance organic semiconductor triethylsilylethynyl difluoroanthradithiophene has been synthesised and characterized. Atomic substitution of carbon for silicon results in subtle changes to opto-electronic properties, which...

scholarly journals High performance p-channel transistors on flexible substrate using direct roll transfer stamping

2021 ◽  
Author(s):  
Ayoub Abdulhafith Sadek Zumeit ◽  
Abhishek S Dahiya ◽  
Adamos Christou ◽  
Ravinder Dahiya
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Electronic Devices ◽  
Silicon On Insulator ◽  
Flexible Substrates ◽  
Device Performance ◽  
Mechanical Bending ◽  
P Type

Abstract lexible electronics with high-performance devices is crucial for transformative advances in several emerging and traditional applications. To address this need, herein we present p-type silicon (Si) nanoribbons (NR)-based high-performance field-effect transistors (FETs) developed using innovative Direct Roll Transfer Stamping (DRTS) process. First, ultrathin Si NRs (~70 nm) are obtained from silicon on insulator (SOI) wafers using conventional top-down method, and then DRTS method is employed to directly place the NRs onto flexible substrates at room temperature (RT). The NRFETs are then developed following RT fabrication process which include deposition of high-quality SiNx dielectric. The fabricated p-channel transistors demonstrate high linear mobility ~100±10 cm2/Vs, current on/off ratio >10^4, and low gate leakage (<1nA). Further, the transistors showed robust device performance under mechanical bending and at wide temperature range (15 to 90 °C), showing excellent potential for futuristic high-performance flexible electronic devices/circuits.

scholarly journals Remarkable charge-transfer mobility from [6] to [10]phenacene as a high performance p-type organic semiconductor

2018 ◽  
Vol 20 (13) ◽  
pp. 8658-8667 ◽  
Author(s):  
Thao P. Nguyen ◽  
P. Roy ◽  
Ji Hoon Shim
Keyword(s):  
Density Functional Theory ◽  
Charge Transfer ◽  
Organic Semiconductors ◽  
High Performance ◽  
Density Functional ◽  
Dft Calculation ◽  
High Efficiency ◽  
Electronic Devices ◽  
Functional Theory ◽  
P Type

A density functional theory (DFT) calculation predicts phenacene as one of the most promising organic semiconductors for high efficiency electronic devices.

scholarly journals Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1583 ◽  
Author(s):  
Damien Thuau ◽  
Katherine Begley ◽  
Rishat Dilmurat ◽  
Abduleziz Ablat ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Critical Thickness ◽  
Field Effect Transistors ◽  
Mechanical Strain ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
P Type

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.

scholarly journals Purity of organic semiconductors as a key factor for the performance of organic electronic devices

2020 ◽  
Vol 4 (12) ◽  
pp. 3678-3689
Author(s):  
Cigdem Yumusak ◽  
Niyazi Serdar Sariciftci ◽  
Mihai Irimia-Vladu
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Organic Field Effect Transistors ◽  
Organic Electronic Devices ◽  
Organic Electronic ◽  
Key Factor ◽  
Key Parameter

Effects of purification were studied in organic field effect transistors. The results presented here indicate that the purity of organic semiconductors is a key parameter to achieve high performance for the field of organic field effect transistors.

scholarly journals Theoretical study of the influence of doped oxygen group elements on the properties of organic semiconductors

2021 ◽  
Author(s):  
Anmin Liu ◽  
Mengfan Gao ◽  
Yan Ma ◽  
Xuefeng Ren ◽  
Liguo Gao ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
High Performance ◽  
High Stability ◽  
Theoretical Study ◽  
Semiconductor Materials ◽  
Organic Semiconductor Materials ◽  
Oxygen Group

Doping oxygen group elements on the properties of organic semiconductor were studied by DFT; the doping of multi-element Te has high stability and mobility; provide guidance for preparing high-performance organic semiconductor materials.

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