Enhanced thermoelectric performance of InTe through Pb doping

Author(s):  
Shantanu Misra ◽  
Adèle Léon ◽  
Petr Levinsky ◽  
Jiří Hejtmánek ◽  
Bertrand Lenoir ◽  
...  

Chalcogenide semiconductors continue to be of prime interest for designing novel efficient materials for energy-conversion applications. Among them, the narrow-band-gap p-type semiconductor InTe exhibits high thermoelectric performance that mostly stems...

2014 ◽  
Vol 2 (17) ◽  
pp. 3429-3438 ◽  
Author(s):  
David O. Scanlon ◽  
John Buckeridge ◽  
C. Richard A. Catlow ◽  
Graeme W. Watson

Using state-of-the-art hybrid DFT calculations we explain the defect chemistry of LaCuOSe, a poorly understood wide band gap p-type conductor.


2015 ◽  
Vol 39 (10) ◽  
pp. 7742-7745 ◽  
Author(s):  
Ye Lian ◽  
Shanshan Ji ◽  
Lei Zhao ◽  
Jie Zhang ◽  
Peixia Yang ◽  
...  

Synthesizing high crystalline quality p-type semiconductor CIGS thin film with a band gap of 1.41 eV by galvanostatic electrodeposition.


2017 ◽  
Vol 2017 ◽  
pp. 1-13
Author(s):  
Mengyao Sun ◽  
Zhiyong Wang ◽  
Yayun Zhao ◽  
Junchao Jin ◽  
Jianrong Xiao ◽  
...  

A new 2D material, phosphorene, has several remarkable advantages; various superiorities make phosphorene a research hotspot. This paper provides comprehensive information about the structure and electronic and magnetic properties of phosphorene adsorbed with atoms, including alkali and alkaline-earth metal atoms, nonmetallic atoms, noble metal atoms, and transition-metal atoms. Phosphorene adsorbed with alkali and alkaline-earth metal atoms, such as Li and Na adatoms, becomes an n-type semiconductor, while phosphorene adsorbed with Be and Mg atoms becomes a p-type semiconductor. In view of nonmetallic adatoms (B, C, N, and O), the B adatom decorated phosphorene becomes metallic, the band gap of phosphorene adsorbed with C adatom decreases, and the phosphorene is p-type with N adatom, while the electronic property of O adatom adsorption case is affected slightly. Regarding noble metal adatoms adsorption condition, the Ag adatom makes phosphorene a n-type semiconductor, the Au adatom induces phosphorene to have a magnetism of 1 μB, and the electronic property of phosphorene is changed by adsorbing with Pt adatom. Among transition-metal adatoms, such as Fe, Ni, Co, Cu, and Zn adatoms, the band gap is reduced when Fe/Ni adatom adheres to the surface of phosphorene, The Co adsorbed phosphorene turns into a polar-gapless semiconductor and phosphorene is proved to be n-type with Cu adatom, but it is testified that the Zn atom is not suitable to adsorb on the phosphorene.


2014 ◽  
Vol 1670 ◽  
Author(s):  
Qinglei Ma ◽  
Hrachya Kyureghian ◽  
Joel D. Banninga ◽  
N. J. Ianno

ABSTRACTAn excellent candidate for an earth abundant absorber material is WSe2 which can be directly grown as a p-type semiconductor with a band gap near 1.4 eV. In this work we present the structural, optical, and electrical properties of thin film WSe2 grown via the selenization of sputter deposited tungsten films. We will show that highly textured films with an optical band gap in range of 1.4 eV, and absorption coefficients greater than 105/cm across the visible spectrum can be easily achieved. In addition we will present Hall Effect and carrier density measurements as well, where will show densities in the 1017cm-3 range and p-type Hall mobilities greater than 10 cm2/V-s range can be obtained. We employ these results to numerically simulate solar cells based on this material, where we will show efficiencies greater than 20% are possible.


Author(s):  
Peng Wen ◽  
Hui Li ◽  
Xiao Ma ◽  
Renbo Lei ◽  
Xinwei Wang ◽  
...  

Producing solar fuels via photoelectrochemical (PEC) CO2 reduction is an energy-saving and environmentally benign technology. As a p-type semiconductor, ZnTe has drawn much attention for the suitable band gap of...


2017 ◽  
Vol 5 (21) ◽  
pp. 5076-5082 ◽  
Author(s):  
Yangyang Ren ◽  
Junyou Yang ◽  
Qinghui Jiang ◽  
Dan Zhang ◽  
Zhiwei Zhou ◽  
...  

Pristine MnTe is a p-type semiconductor with a relatively low hole concentration of 1018 cm−3, low electrical conductivity, and thus poor TE performance at room temperature owing to the broad direct band gap of 1.27 eV.


2018 ◽  
Vol 9 (1) ◽  
pp. 223-230 ◽  
Author(s):  
Luca D'Amario ◽  
Jens Föhlinger ◽  
Gerrit Boschloo ◽  
Leif Hammarström

Mesoporous NiO is used as p-type material in photoelectrochemical energy conversion devices. The presence of two kinds of hole traps can affect device performance. Here, after band-gap excitation, the relaxation of the hole into two different traps was observed and characterized.


2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Samuel A. Miller ◽  
Ian Witting ◽  
Umut Aydemir ◽  
Lintao Peng ◽  
Alexander J. E. Rettie ◽  
...  

2018 ◽  
Vol 54 (99) ◽  
pp. 13949-13952 ◽  
Author(s):  
Y. Wang ◽  
H. X. Ge ◽  
Y. P. Chen ◽  
X. Y. Meng ◽  
J. Ghanbaja ◽  
...  

Wurtzite CoO is a p-type semiconductor with a direct band gap of 1.6 eV and an intense sub-gap absorption.


2002 ◽  
Vol 747 ◽  
Author(s):  
Satoru Narushima ◽  
Hiroshi Mizoguchi ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Ken-ichi Shimizu ◽  
...  

ABSTRACTAn amorphous p-type conductive oxide semiconductor was created based on a mother crystalline material, a p-type conductive ZnRh2O4 spinel. The amorphous film of ZnRh2O4 was deposited by an rf sputtering method. Seebeck coefficient was positive, +78 μVK-1, indicating that major carrier is a positive hole. A moderate electrical conductivity (2 S cm-1 at room temperature) for a p-type semiconductor was observed. Optical band gap was estimated to be 2.1 eV. P-n junction diodes with a structure of Au / a-ZnRh2O4 / a-InGaZnO4 / ITO fabricated on glass substrates, operated with a good rectifying characteristics, a rectification current ratio at ± 5V of ∼103. The threshold voltage was 2.1 eV, which corresponds to the band gap energy of the amorphous ZnRh2O4. This is the first discovery of a p-type amorphous oxide and the demonstration of p-n junction all composed of amorphous oxide semiconductors.


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