scholarly journals Improving the efficiency of crystalline silicon solar cell through regulating their temperature using thin films of polyvinyl alcohol

2021 ◽  
Vol 286 ◽  
pp. 02012
Author(s):  
Ali Kadhim Naser ◽  
Dhafer Manea Hachim ◽  
Qahtan A Abed
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Polyvinyl Alcohol ◽  
Crystalline Silicon ◽  
Dip Coating ◽  
Maximum Temperature ◽  
Maximum Efficiency ◽  
Crystalline Silicon Solar Cell ◽  
Cell Parameters ◽  
Pv Module

Rising temperatures significantly affect the PV module, decreasing its voltage and lowering output power. Furthermore, temperature rises have been linked to several PV module failures or degradation modes. The purpose of this study analyzes polyvinyl alcohol PVA on crystalline silicon solar cells as a thermal insulation thin film. PVA thin films were prepared by dip-coating technique with a thickness of 1.15μm. The films exhibit suitable solar cell temperature controlling though it's an effect on masking the ultraviolet wavelength. The maximum temperature variation on the coating solar cell's surface was 4.5 °C as a comparison to a bare solar cell with irradiate exposure time 1800sec, and maximum efficiency obtained 18.99% in which Voc = 0.566 v and Isc = 330.2 mA when compared with bare solar cell 15.07% with benefit efficiency +3.92%. The concentrations of the polyvinyl alcohol influences on thin films and their effect on solar cell parameters are discussed.

scholarly journals An Analysis of Fill Factor Loss Depending on the Temperature for the Industrial Silicon Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2931
Author(s):  
Kwan Hong Min ◽  
Taejun Kim ◽  
Min Gu Kang ◽  
Hee-eun Song ◽  
Yoonmook Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Fill Factor ◽  
Crystalline Silicon ◽  
Crystalline Silicon Solar Cell ◽  
Initial State ◽  
Cell Parameters ◽  
Loss Analysis ◽  
Pv Module

Since the temperature of a photovoltaic (PV) module is not consistent as it was estimated at a standard test condition, the thermal stability of the solar cell parameters determines the temperature dependence of the PV module. Fill factor loss analysis of crystalline silicon solar cell is one of the most efficient methods to diagnose the dominant problem, accurately. In this study, the fill factor analysis method and the double-diode model of a solar cell was applied to analyze the effect of J01, J02, Rs, and Rsh on the fill factor in details. The temperature dependence of the parameters was compared through the passivated emitter rear cell (PERC) of the industrial scale solar cells. As a result of analysis, PERC cells showed different temperature dependence for the fill factor loss of the J01 and J02 as temperatures rose. In addition, we confirmed that fill factor loss from the J01 and J02 at elevated temperature depends on the initial state of the solar cells. The verification of the fill factor loss analysis was conducted by comparing to the fitting results of the injection dependent-carrier lifetime.

scholarly journals Investigations of electrical and optical properties of functional TCO thin films

2015 ◽  
Vol 33 (2) ◽  
pp. 363-368 ◽  
Author(s):  
Jarosław Domaradzki ◽  
Danuta Kaczmarek ◽  
Kazimierz Drabczyk ◽  
Piotr Panek
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Indium Tin Oxide ◽  
Crystalline Silicon ◽  
Transparent Conducting Oxide ◽  
Deposition Process ◽  
Beam Current ◽  
Antireflection Coating ◽  
Electron Beam Current ◽  
Crystalline Silicon Solar Cell

AbstractTransparent conducting oxide (TCO) films of indium-tin-oxide were evaporated on the surface of silicon wafers after phosphorous diffusion and on the reference glass substrates. The influence of deposition process parameters (electron beam current, oxygen flow and the substrate temperature) on optical and electrical properties of evaporated thin films were investigated by means of resistivity measurements and optical spectrophotometry. The performance of prepared thin films was judged by calculated figure of merit and the best result was obtained for the sample deposited on the substrate heated to the 100 °C and then removed from the deposition chamber and annealed in an air for 5 minutes at 400 °C. Refractive index and extinction coefficient were evaluated based on measured transmission spectra and used for designing of antireflection coating for solar cell. The obtained results showed that prepared TCO thin films are promising as a part of counter electrode in crystalline silicon solar cell construction.

scholarly journals Performance Dependence of (I-V) and (C-V) for Solar Cells on Environmental Conditions

2018 ◽  
Vol 14 (1) ◽  
pp. 5331-5351
Author(s):  
A. M. Abd El-Maksood
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Dynamic Characteristics ◽  
Environmental Conditions ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Open Circuit ◽  
Charge Carrier Concentration ◽  
Crystalline Silicon Solar Cell ◽  
Cell Parameters

The present paper is a trial to shed further light on the dependence performance of mono-crystalline silicon solar cell (photovoltaic cell) on the environmental conditions. In this concern, the static (I-V) and dynamic (C-V) characteristics measurement were studied in details under the effect of illumination type, intensity and wavelength, as well temperature on the physical and electrical parameters of solar cell. The dependence of cell parameters- extracted from (I-V) characteristic curves- open-circuit voltage (Voc), short-circuit current (Isc), fill-factor (FF), conversion efficiency (η) as well the series -and shunt-resistances (Rs and Rsh), on the intensity has been investigated for a wide illumination intensity range 1.0 - 70 mW/cm2. It was observed that, for illumination levels higher than 10 klux, the values of Voc, Rsh, FF and efficiency were shown to be saturated. Isc was shown to be increased linearly, while Rs decreased exponentially as a function of illumination level. On the other hand, considering the dynamic characteristics (C-V), a detailed study was carried out for solar cells biased on both the forward - and reverse modes at frequency range of 20 kHz - 140 kHz and different illumination - levels. From which, the barrier potential (Vbi) and doping (charge carrier) concentration (Na) were determined. Besides, the influence of temperature within the range from 30 up to 110 oC on both the static and dynamic characteristics was tested. From which, it is clear that Voc, maximum powers (Pmax), FF, η of the sample were shown to be temperature decreasing functions. Moreover, Isc has a feeble increasing temperature coefficient. Finally, the solar cell capacitance (C) and dissipation factor (D) rise with rising temperature in both bias voltage conditions, while, impedance (Z), quality factor (Q), and phase angle (φ) reduce with rising temperature.

Crystalline silicon solar cells with high resistivity emitter

2009 ◽  
Vol 17 (2) ◽  
Author(s):  
P. Panek ◽  
K. Drabczyk ◽  
P. Zięba
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Quantitative Estimation ◽  
Spectral Response ◽  
World Market ◽  
High Resistivity ◽  
Crystalline Silicon Solar Cell ◽  
Cell Parameters

AbstractThe paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl3 resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

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