Local variation of room-temperature thermal conductivity in high-quality polycrystalline diamond

1998 ◽  
Vol 73 (6) ◽  
pp. 756-758 ◽  
Author(s):  
M. Reichling ◽  
T. Klotzbücher ◽  
J. Hartmann
Keyword(s):  
Thermal Conductivity ◽  
Room Temperature ◽  
Polycrystalline Diamond ◽  
Local Variation ◽  
High Quality

THE EFFECT OF SPONTANEOUS AND PIEZOELECTRIC POLARIZATION ON THERMAL CONDUCTIVITY OF InN

2013 ◽  
Vol 27 (09) ◽  
pp. 1350031 ◽  
Author(s):  
BIJAYA KUMAR SAHOO ◽  
SUSANT KUMAR SAHOO ◽  
SUKDEV SAHOO
Keyword(s):  
Thermal Conductivity ◽  
Thermal Properties ◽  
Group Velocity ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Polarization Property ◽  
Optical And Electrical Properties ◽  
High Quality ◽  
Phonon Group Velocity ◽  
Debye Frequency

The spontaneous (SP) and piezoelectric (PZ) polarization present in the wurtzite III nitrides influence the optical and electrical properties of these materials. The effects of SP and PZ polarization on thermal properties of III nitrides have yet to be investigated. Here we have investigated the SP and PZ effects on thermal conductivity of InN . Inclusion of polarization property modifies the group velocity of phonons. The combined phonon scattering rates and thermal conductivity k of InN are calculated using modified phonon group velocity, Debye frequency and Debye temperature. Without SP and PZ polarization, the room temperature thermal conductivity of InN is found to be 132.55 W/m.K. Inclusion of SP and PZ polarization property enhances the room temperature thermal conductivity from 132.55 to 134.32 W/m.K. Our predicted thermal conductivity values are closer to the recent experimental value 120 W/m.K measured by Levander et al. for a high quality irradiated InN films at room temperature.

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

scholarly journals Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aastha Vasdev ◽  
Moinak Dutta ◽  
Shivam Mishra ◽  
Veerpal Kaur ◽  
Harleen Kaur ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Direct Evidence ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
Pdf Analysis ◽  
Ferroelectric Transition Temperature

AbstractA remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te , a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250–300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te . The length scale of the $${\text {Ge}}^{2+}$$ Ge 2 + off-centering is 0.25–0.10 Å near the room temperatures (250–300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te .

Thermal Conductivity of Room Temperature Deep Eutectic Solvents

2021 ◽  
Author(s):  
Noor Albayati ◽  
Mohammed Kadhom ◽  
Ghassan Abdullah ◽  
Suhaib Salih
Keyword(s):  
Thermal Conductivity ◽  
Room Temperature ◽  
Deep Eutectic Solvents

scholarly journals Above-room-temperature giant thermal conductivity switching in spintronic multilayers

2021 ◽  
Vol 118 (4) ◽  
pp. 042409
Author(s):  
Hiroyasu Nakayama ◽  
Bin Xu ◽  
Sotaro Iwamoto ◽  
Kaoru Yamamoto ◽  
Ryo Iguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Room Temperature ◽  
Conductivity Switching

scholarly journals Research on Thermal Stability and Properties of Ca3ZrSi2O9 as Potential T/EBC Materials

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 583
Author(s):  
Yangyang Pan ◽  
Bo Liang ◽  
Yaran Niu ◽  
Dijuan Han ◽  
Dongdong Liu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Stability ◽  
Fracture Toughness ◽  
Room Temperature ◽  
Coefficient Of Thermal Expansion ◽  
Atmospheric Plasma ◽  
Thermal Barrier ◽  
Mechanical And Thermal Properties ◽  
Self Healing ◽  
Barrier Coating

In this study, a new coating material for thermal barrier coating (TBC) or environment barrier coating (EBC) application, Ca3ZrSi2O9 (CZSO), was synthesized and prepared by atmospheric plasma spray (APS) technology. The evolution of the phases and microstructures of the coatings with different thermal-aged were characterized by XRD, XRF, EDS and SEM, respectively. The thermal stability was measured by TG-DTA and DSC. The mechanical and thermal properties, including Vickers hardness (HV), fracture toughness (KIC), thermal conductivity () and coefficient of thermal expansion (CTE) were focused on. It was found that the as-sprayed CZSO coating contained amorphous phase. Crystalline transformation happened at 900–960 ∘C and no mass changes took place from room temperature (RT) to 1300 ∘C. The phenomena of microcrack self-healing and composition uniformity were observed during thermal aging. The of coating was very low at about 0.57–0.80 Wm−1K−1 in 200–1200 ∘C. The combined properties indicated that the CZSO coating might be a potential T/EBC material.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

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