Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar

Applied Physics Letters ◽

10.1063/1.1630163 ◽

2003 ◽

Vol 83 (22) ◽

pp. 4637-4639 ◽

Author(s):

T. Ohmori ◽

T. K. Goto ◽

T. Kitajima ◽

T. Makabe

Keyword(s):

Plasma Etching ◽

Negative Charge ◽

Charge Injection ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma ◽

Positively Charged

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Negative charge injection to a wafer in a pulsed two-frequency capacitively coupled plasma for oxide etching; diagnostics by emission-selected computerized tomography

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/37/16/003 ◽

2004 ◽

Vol 37 (16) ◽

pp. 2223-2231 ◽

Author(s):

Takeshi Ohmori ◽

Takeshi Goto ◽

Toshiaki Makabe

Keyword(s):

Computerized Tomography ◽

Negative Charge ◽

Charge Injection ◽

Capacitively Coupled ◽

Oxide Etching ◽

Capacitively Coupled Plasma

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Reduction of particle generation in capacitively coupled plasma etching reactor

2007 International Symposium on Semiconductor Manufacturing ◽

10.1109/issm.2007.4446859 ◽

2007 ◽

Author(s):

Kotaro Horikoshi ◽

Taichi Hayamizu ◽

Motohiro Hirano ◽

Ko Sasaki ◽

Makoto Nagano ◽

...

Keyword(s):

Plasma Etching ◽

Capacitively Coupled ◽

Particle Generation ◽

Capacitively Coupled Plasma

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Erosion of focus rings in capacitively coupled plasma etching reactors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0001225 ◽

2021 ◽

Vol 39 (6) ◽

pp. 063002

Author(s):

Xifeng Wang ◽

Hyunjae Lee ◽

Sang Ki Nam ◽

Mark J. Kushner

Keyword(s):

Plasma Etching ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma

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Time-Resolved Measurement of Charging on Hole Bottoms of SiO2Wafer Exposed to Plasma Etching in a Pulsed Two-Frequency Capacitively Coupled Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l1105 ◽

2005 ◽

Vol 44 (No. 35) ◽

pp. L1105-L1108 ◽

Author(s):

Takeshi Ohmori ◽

Takeshi Kamata Goto ◽

Takeshi Kitajima ◽

Toshiaki Makabe

Keyword(s):

Plasma Etching ◽

Time Resolved ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma

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Infinitely high etch selectivity during CH2F2/H2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a-C

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.3430551 ◽

2010 ◽

Vol 28 (4) ◽

pp. 755-760 ◽

Author(s):

J. S. Kim ◽

B. S. Kwon ◽

W. Heo ◽

C. R. Jung ◽

J. S. Park ◽

...

Keyword(s):

Silicon Nitride ◽

Plasma Etching ◽

Chemical Vapor ◽

Dual Frequency ◽

Capacitively Coupled ◽

Chemical Vapor Deposited ◽

Capacitively Coupled Plasma

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Effect of high-frequency variation on ArF photoresist deformation during superimposed dual frequency (DFS) capacitively coupled plasma etching

Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004. ◽

10.1109/imnc.2004.245789 ◽

2004 ◽

Author(s):

D.H. Kim ◽

S.H. Cho ◽

N.-E. Lee

Keyword(s):

Plasma Etching ◽

High Frequency ◽

Frequency Variation ◽

Dual Frequency ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma

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Magnetically-enhanced capacitively-coupled plasma etching for 300 mm wafer-scale fabrication of Cu through-silicon-vias for 3D logic integration

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090338 ◽

2009 ◽

Author(s):

W.H. Teh ◽

R. Caramto ◽

S. Arkalgud ◽

T. Saito ◽

K. Maruyama ◽

...

Keyword(s):

Plasma Etching ◽

Through Silicon Vias ◽

Capacitively Coupled ◽

Wafer Scale ◽

Capacitively Coupled Plasma ◽

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Auto-Masked Surface Texturing of Kerf-Loss Free Silicon Wafers Using Hexafluoroisopropanol in a Capacitively Coupled Plasma Etching System

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0091904jss ◽

2019 ◽

Vol 8 (4) ◽

pp. Q76-Q79

Author(s):

Suhyun Kim ◽

Jin-Su Park ◽

Jun-Hyun Kim ◽

Chang-Koo Kim ◽

Jihyun Kim

Keyword(s):

Plasma Etching ◽

Surface Texturing ◽

Silicon Wafers ◽

Capacitively Coupled ◽

Free Silicon ◽

Capacitively Coupled Plasma ◽

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Dust transport phenomena in a capacitively coupled plasma reactor

Journal of Applied Physics ◽

10.1063/1.1285843 ◽

2001 ◽

Vol 89 (1) ◽

pp. 34-41 ◽

Author(s):

Heon Chang Kim ◽

Vasilios I. Manousiouthakis

Keyword(s):

Plasma Reactor ◽

Transport Phenomena ◽

Capacitively Coupled ◽

Dust Transport ◽

Capacitively Coupled Plasma

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First Principles Investigation of the Stability and the Chemical Behavior of Hydrogen in ThCoH4

Zeitschrift für Naturforschung B ◽

10.1515/znb-2011-0308 ◽

2011 ◽

Vol 66 (3) ◽

pp. 269-274

Author(s):

Samir F. Matar

Keyword(s):

Negative Charge ◽

Geometry Optimization ◽

Full Geometry Optimization ◽

Intermetallic Matrix ◽

Charge Analysis ◽

The Stability ◽

The One ◽

Site Selective ◽

Bader Charge Analysis ◽

Positively Charged

We address the changes in the electronic structure brought by the insertion of hydrogen into ThCo leading to the experimentally observed ThCoH4. Full geometry optimization positions the hydrogen in three sites stabilized in the expanded intermetallic matrix. From a Bader charge analysis, hydrogen is found to be in a narrow iono-covalent (~−0.6) to covalent (~−0.3) bonding which should enable site-selective desorption. The overall chemical picture shows a positively charged Thδ+ with the negative charge redistributed over a complex anion {CoH4}δ− with δ~1.8. Nevertheless this charge transfer remains far from the one in the more ionic hydridocobaltate anion CoH54− in Mg2CoH5, due to the largely electropositive character of Mg.

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