Auto-Masked Surface Texturing of Kerf-Loss Free Silicon Wafers Using Hexafluoroisopropanol in a Capacitively Coupled Plasma Etching System

2019 ◽  
Vol 8 (4) ◽  
pp. Q76-Q79
Author(s):  
Suhyun Kim ◽  
Jin-Su Park ◽  
Jun-Hyun Kim ◽  
Chang-Koo Kim ◽  
Jihyun Kim
Author(s):  
Kotaro Horikoshi ◽  
Taichi Hayamizu ◽  
Motohiro Hirano ◽  
Ko Sasaki ◽  
Makoto Nagano ◽  
...  

2021 ◽  
Vol 39 (6) ◽  
pp. 063002
Author(s):  
Xifeng Wang ◽  
Hyunjae Lee ◽  
Sang Ki Nam ◽  
Mark J. Kushner

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 380
Author(s):  
Jun-Hyun Kim ◽  
Sanghyun You ◽  
Chang-Koo Kim

Si surfaces were texturized with periodically arrayed oblique nanopillars using slanted plasma etching, and their optical reflectance was measured. The weighted mean reflectance (Rw) of the nanopillar-arrayed Si substrate decreased monotonically with increasing angles of the nanopillars. This may have resulted from the increase in the aspect ratio of the trenches between the nanopillars at oblique angles due to the shadowing effect. When the aspect ratios of the trenches between the nanopillars at 0° (vertical) and 40° (oblique) were equal, the Rw of the Si substrates arrayed with nanopillars at 40° was lower than that at 0°. This study suggests that surface texturing of Si with oblique nanopillars reduces light reflection compared to using a conventional array of vertical nanopillars.


2000 ◽  
Vol 77 (4) ◽  
pp. 489-491 ◽  
Author(s):  
T. Kitajima ◽  
Y. Takeo ◽  
Z. Lj. Petrović ◽  
T. Makabe

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