Grain Boundary Dopant and Heat Treatment Effects on the Electrical Properties of Polycrystalline ZnO

1995 ◽  
Vol 411 ◽  
Author(s):  
T. D. Chen ◽  
J.-R. Lee ◽  
H. L. Tuller ◽  
Y.-M. Chiang
Keyword(s):  
Heat Treatment ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Low Leakage ◽  
Current Voltage ◽  
Transient Spectroscopy

ABSTRACTSimplified varistor systems of bismuth- and cobalt-doped zinc oxide are studied. A prior study has shown that the distributions of bismuth segregation at the grain boundaries in such samples can be controlled by varying microstructure and heat treatment. Current-voltage and deep level transient spectroscopy measurements were done to evaluate the corresponding electrical properties. Low leakage and α values of ˜30 were attained, despite the nominal, twocomponent doping of these simplified varistors. Moreover, these samples show the signature defects that are found in many multi-dopant, commercial devices: two shallow bulk traps at ˜0.14 eV and ˜0.24 eV and one prominent interfacial trap at ˜1 eV.

Identification of Surface-Related Electron Traps in Undoped GaAs by Deep Level Transient Spectroscopy

1989 ◽  
Vol 163 ◽  
Author(s):  
Ki-Chul Shin ◽  
In-Shik Park
Keyword(s):  
Heat Treatment ◽  
Grain Boundary ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Boundary Region ◽  
Intrinsic Defect ◽  
Concentration Change ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Undoped Gaas

AbstractUsing undoped GaAs containing grain boundary, we performed annealing test to identify the processes occurring during heat treatment. We propose EL2 as a complex of double vacancy, AsGa and Asi. From the concentration change at grain boundary region we temporarily conclude that EL3 is a simple intrinsic defect.

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

scholarly journals Structural and Electrical Properties of Beryllium Implanted Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
H. Tanoue ◽  
M. Gong ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Surface Region ◽  
Structural And Electrical Properties ◽  
Transient Spectroscopy ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTStructural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500 °C and 1700 °C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450 °C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Electrical Properties of Clustered and Precipitated Iron in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 109-114
Author(s):  
R. Khalil ◽  
Vitaly V. Kveder ◽  
Wolfgang Schröter ◽  
Michael Seibt
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Iron Silicide ◽  
Electronic States ◽  
Moderate Temperature ◽  
Extended Defects ◽  
Characteristic Features ◽  
Transient Spectroscopy ◽  
The Stability

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

2010 ◽  
Vol 645-648 ◽  
pp. 499-502 ◽  
Author(s):  
Alberto F. Basile ◽  
John Rozen ◽  
X.D. Chen ◽  
Sarit Dhar ◽  
John R. Williams ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Band Energy ◽  
Transient Spectroscopy ◽  
Semiconductor Traps

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

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