Microsecond carrier lifetimes in Si films prepared on SiO2‐coated Si substrates by zone‐melting recrystallization and by subsequent epitaxial growth

1982 ◽  
Vol 41 (1) ◽  
pp. 83-85 ◽  
Author(s):  
B‐Y. Tsaur ◽  
John C. C. Fan ◽  
M. W. Geis
Keyword(s):  
Epitaxial Growth ◽  
Zone Melting ◽  
Carrier Lifetimes ◽  
Si Substrates ◽  
Si Films

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

2012 ◽  
Vol 1426 ◽  
pp. 331-337
Author(s):  
Hiroshi Noge ◽  
Akira Okada ◽  
Ta-Ko Chuang ◽  
J. Greg Couillard ◽  
Michio Kondo
Keyword(s):  
Epitaxial Growth ◽  
Heating Temperature ◽  
Exothermic Reaction ◽  
Epitaxial Films ◽  
Si Substrates ◽  
Glass Substrates ◽  
Good Crystallinity ◽  
Crystalline Films ◽  
Si Films ◽  
First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

Zone‐melting recrystallization of 3‐in.‐diam Si films on SiO2‐coated Si substrates

1982 ◽  
Vol 41 (2) ◽  
pp. 186-188 ◽  
Author(s):  
John C. C. Fan ◽  
B‐Y. Tsaur ◽  
R. L. Chapman ◽  
M. W. Geis
Keyword(s):  
Zone Melting ◽  
Si Substrates ◽  
Si Films

SOI/CMOS circuits fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates

1982 ◽  
Vol 3 (12) ◽  
pp. 398-401 ◽  
Author(s):  
B.Y. Tsaur ◽  
J.C.C. Fan ◽  
R.L. Chapman ◽  
M.W. Geis ◽  
D.J. Silversmith ◽  
...  
Keyword(s):  
Zone Melting ◽  
Cmos Circuits ◽  
Si Substrates ◽  
Si Films ◽  
Soi Cmos

Silicon-On-Insulator Mosfets Fabricated in Zone-Melting-Recrystallized Poly-Si Films on SiO2

1981 ◽  
Vol 4 ◽  
Author(s):  
B­Y. Tsaur ◽  
M. W. Gels ◽  
John C. C. Fan ◽  
D. J. Silversmith ◽  
R. W. Mountain
Keyword(s):  
Carrier Mobility ◽  
High Surface ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Surface Electron ◽  
Leakage Currents ◽  
Si Substrates ◽  
Enhancement Mode ◽  
Low Leakage ◽  
Si Films

ABSTRACTN- and p-channel enhancement-mode MOSFETs have been fabricated in Si films prepared by zone-melting recrystallization of poly-Si deposited on SiO2-coated Si substrates. The transistors exhibit high surface mobilities, in the range of 560–620 cm2/V−s for electrons and 200–240 cm2/V−s for holes, and low leakage currents of the order of 0.1 pA/μm (channel width). Uniform device performance with a yield exceeding 90% has been measured in tests of more than 100 devices. The interface between the Si film and the SiO2 layer on the substrate is characterized by an oxide charge density of 1–2 × 1011 cm−2 and a high surface carrier mobility. N-channel MOSFETs fabricated inSi films recrystallized on SiO2-coated fused quartz subtrates exhibit surface electron mobilities substantially higher than those of single-crystal Si devices because the films are under a large tensile stress.

Effects of subgrain boundaries on carrier transport in zone-melting-recrystallized Si films on SiO2-coated Si substrates

1982 ◽  
Vol 3 (4) ◽  
pp. 79-82 ◽  
Author(s):  
B.-Y. Tsaur ◽  
J.C.C. Fan ◽  
M.W. Geis ◽  
D.J. Silversmith ◽  
R.W. Mountain
Keyword(s):  
Carrier Transport ◽  
Zone Melting ◽  
Si Substrates ◽  
Si Films

Crystalline Films on Amorphous Substrates by Zone Melting and Surface-Energy-Driven Grain Growth in Conjunction with Patferning

1985 ◽  
Vol 53 ◽  
Author(s):  
Henry I. Smith ◽  
M. W. Geis ◽  
C. V. Thompson ◽  
C. K. Chen
Keyword(s):  
Low Temperature ◽  
Surface Energy ◽  
Grain Boundaries ◽  
Grain Growth ◽  
High Temperatures ◽  
Zone Melting ◽  
Si Substrates ◽  
Crystalline Films ◽  
Amorphous Substrates ◽  
Si Films

ABSTRACTTwo approaches to preparing oriented crystalline films on amorphous substrates are reviewed briefly: zone-melting recrystallization (ZMR) and surface-energy-driven grain growth (SEDGG). In both approaches patterning can be employed either to establish orientation or to control the location of defects. ZMR has been highly successful for the growth of Si films on oxidized Si substrates, but its applicability is limited by the high temperatures required. SEDGG has been investigated as a potentially universal, low temperature approach. It has been demonstrated in Si, Ge, and Au. Surface gratings favor the growth of grains with a specific in-plane orientation. In order for SEDGG to be of broad practical value, the mobility of semiconductor grain boundaries must be increased substantially. Mobility enhancement has been achieved via doping and ion bombardment.

CVD Growth of SiC on Ultrathin SOi2: A Step Towards Development of a Compliant Substrate for SiC and III-V Compounds

1995 ◽  
Vol 410 ◽  
Author(s):  
Freydoon Namavar ◽  
P. Colter ◽  
A. Cremins-Costa ◽  
E. Gagnon ◽  
D. Perry
Keyword(s):  
Epitaxial Growth ◽  
Growth Conditions ◽  
Auger Spectroscopy ◽  
Cross Sectional ◽  
Plan View ◽  
Compliant Substrate ◽  
Si Substrates ◽  
Initial Stage ◽  
Cvd Growth ◽  
Si Films

ABSTRACTThis paper addresses the initial stage of epitaxial growth of SiC on thin (about 300A) and thick (2000Å) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO2 (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.

Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO2

2015 ◽  
Vol 1770 ◽  
pp. 67-72
Author(s):  
Vernon K. Wong ◽  
A. M. Chitu ◽  
A. B. Limanov ◽  
James S. Im
Keyword(s):  
Epitaxial Growth ◽  
Growth Model ◽  
Crystal Nucleation ◽  
Key Factors ◽  
Complete Melting ◽  
Melting Regime ◽  
Direct Growth ◽  
Crystal Core ◽  
Excimer Laser Irradiation ◽  
Si Films

ABSTRACTWe have investigated the solidified microstructure of nucleation-generated grains obtained via complete melting of Si films on SiO2 at high nucleation temperatures. This was achieved using a high-temperature-capable hot stage in conjunction with excimer laser irradiation. As predicted by the direct-growth model that considers (1) the evolution in the temperature of the solidifying interface and (2) the subsequent modes of growth (consisting of amorphous, defective, and epitaxial) as key factors, we were able to observe the appearance of “normal” grains that possess a single-crystal core area. These grains, which are in contrast to previously reported flower-shaped grains that fully make up the microstructure of the solidified films obtained via irradiation at lower preheating temperatures (and amongst which these “normal” grains emerge), indicate that epitaxial growth of nucleated crystals must have taken place within the grains. We discuss the implications of our findings regarding (1) the validity of the direct-growth model, (2) the nature of the heterogeneous nucleation mechanism, and (3) the alternative explanations and assumptions that have been previously employed in order to explain the microstructure of Si films obtained via nucleation and growth within the complete melting regime.

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas

2008 ◽  
Vol 600-603 ◽  
pp. 247-250 ◽  
Author(s):  
Yasuo Hirabayashi ◽  
Satoru Kaneko ◽  
Kensuke Akiyama
Keyword(s):  
Epitaxial Growth ◽  
Heating Rate ◽  
Smooth Surface ◽  
Early Stage ◽  
Low Pressure ◽  
Single Domain ◽  
Single Crystalline ◽  
Si Substrates

The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without thermal pits is studied. Subsequent hetero-epitaxial 3C-SiC with smooth surface have been grown by low-pressure CVD. Single-crystalline carbonized layers could be grown at 1050°C by using suitable carbonization processes. The surfaces of Si were covered with single-crystalline 3C-SiC layers at an early stage of carbonization, preventing out-diffusion of Si atoms from Si substrates. 3C-SiC epi-film have RMS = 0.4nm but no single domain. The protrusion density of the film was an order of 1000 cm-2.

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