Organic-Inorganic Nanocomposites Based on Iron Containing Clusters and Biomolecules

1995 ◽  
Vol 48 (4) ◽  
pp. 783 ◽  
Author(s):  
P Chan ◽  
W Chuaanusorn ◽  
M Nesterova ◽  
P Sipos ◽  
TG Stpierre ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Chondroitin Sulfate ◽  
Iron Sulfide ◽  
Nucleation And Growth ◽  
Protein Cage ◽  
Structural Order ◽  
Nucleation Sites ◽  
Inorganic Nanocomposites ◽  
Higher Temperature ◽  
Inorganic Clusters

Biopolymers, such as the protein ferritin and the polysaccharides chondroitin sulfate and chitosan, have been used to control the nucleation and growth of nanoscale iron(III) hydroxide clusters. The biopolymers can provide nucleation sites, that in some cases are spatially defined by the shape of the polymer, and/or defined volumes within which crystal growth of the iron(III) hydroxide can proceed. The product inorganic clusters are bound to the organic polymers which both keep them in solution and prevent aggregation. The morphology of the clusters (spheres or rods) and the uniformity of their dimensions are determined by the biopolymer chosen. The temperature of formation is shown to have an effect on the structure of the clusters, a higher temperature resulting in larger inorganic clusters with a higher degree of structural order. Iron(III) hydroxide clusters in ferritin cages can be partially transformed to iron sulfide by reaction with H2S gas while remaining in the protein cage.

The Kinetics and Microstructure of Ion Beam Induced Crystallisation of Silicon

1985 ◽  
Vol 45 ◽  
Author(s):  
J.S. Williams ◽  
W.L. Brown ◽  
R. G. Elliman ◽  
R. V. Knoell ◽  
D.M. Maher ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystal Growth ◽  
Growth Kinetics ◽  
Temperature Regime ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Nucleation Sites ◽  
Higher Temperature

ABSTRACTThis paper reviews recent detailed investigations into the crystal growth kinetics and the microstructure of ion-beam-stimulated epitaxial crystallisation of silicon. Beam-induced crystallisation at temperatures between 200-400°C is found to be characterised by an activation energy of 0.24eV. Furthermore, in this temperature regime, crystal growth on (100) silicon is found to be free of extended defects except for a sharp hand of dislocation loops centred about the range of the ions employed to stimulate crystallisation. A higher temperature regime (>400°C) is observed in which the growth kinetics are less well defined but appear to be associated with an apparent activation energy of >0.5eV. In this regime, extended defects are observed to extend from the ion range to the surface. Results are presented which strongly suggest that nuclear energy deposition precisely at the amorphous-crystalline interface is responsible for crystallisation under ion irradiation. It is argued that the major fraction (2.4eV) of the thermal-only activation energy for epitaxial crystallisation of silicon is likely to be associated with the formation of nucleation sites for growth, a step which is achieved athermally under ion irradiation. In addition, the growth rate per unit ion fluence is found to be independent of substrate orientation at temperatures <450°C and independent of doping concentration for temperatures <400°C. These results are consistent with our proposed model for beam-induced crystallisation.

Phase separation in undercooled molten Pd80Si20: Part I

1999 ◽  
Vol 14 (9) ◽  
pp. 3653-3662 ◽  
Author(s):  
K. L. Lee ◽  
H. W. Kui
Keyword(s):  
Growth Rate ◽  
Phase Separation ◽  
Crystal Growth ◽  
Grain Refinement ◽  
Crystallization Temperature ◽  
Sharp Decrease ◽  
Nucleation And Growth ◽  
Crystal Growth Rate ◽  
Large Undercooling ◽  
Kinetic Crystallization

Three different kinds of morphology are found in undercooled Pd80Si20, and they dominate at different undercooling regimens ΔT, defined as ΔT = T1 – Tk, where T1 is the liquidus of Pd80Si20 and Tk is the kinetic crystallization temperature. In the small undercooling regimen, i.e., for ΔT ≤ 190 K, the microstructures are typically dendritic precipitation with a eutecticlike background. In the intermediate undercooling regimen, i.e., for 190 ≤ ΔT ≤ 220 K, spherical morphologies, which arise from nucleation and growth, are identified. In addition, Pd particles are found throughout an entire undercooled specimen. In the large undercooling regimen, i.e., for ΔT ≥ 220 K, a connected structure composed of two subnetworks is found. A sharp decrease in the dimension of the microstructures occurs from the intermediate to the large undercooling regimen. Although the crystalline phases in the intermediate and the large undercooling regimens are the same, the crystal growth rate is too slow to bring about the occurrence of grain refinement. Combining the morphologies observed in the three undercooling regimens and their crystallization behaviors, we conclude that phase separation takes place in undercooled molten Pd80Si20.

scholarly journals N-Dopant-Mediated Growth of Metal Oxide Nanoparticles on Carbon Nanotubes

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1882
Author(s):  
Jin Ah Lee ◽  
Won Jun Lee ◽  
Joonwon Lim ◽  
Sang Ouk Kim
Keyword(s):  
Carbon Nanotubes ◽  
Metal Oxide ◽  
Carbon Nanomaterials ◽  
Wide Spectrum ◽  
Metal Oxide Nanoparticles ◽  
Nucleation And Growth ◽  
Oxide Nanoparticles ◽  
Metal Oxide Nanoparticle ◽  
Nucleation Sites ◽  
Direct Growth

Metal oxide nanoparticles supported on heteroatom-doped graphitic surfaces have been pursued for several decades for a wide spectrum of applications. Despite extensive research on functional metal oxide nanoparticle/doped carbon nanomaterial hybrids, the role of the heteroatom dopant in the hybridization process of doped carbon nanomaterials has been overlooked. Here, the direct growth of MnOx and RuOx nanoparticles in nitrogen (N)-doped sites of carbon nanotubes (NCNTs) is presented. The quaternary nitrogen (NQ) sites of CNTs actively participate in the nucleation and growth of the metal nanoparticles. The evenly distributed NQ nucleation sites mediate the generation of uniformly dispersed <10 nm diameter MnOx and RuOx nanoparticles, directly decorated on NCNT surfaces. The electrochemical performance of the resultant hybridized materials was evaluated using cyclic voltammetry. This novel hybridization method using the dopant-mediated nucleation and growth of metal oxides suggests ways that heteroatom dopants can be utilized to optimize the structure, interface and corresponding properties of graphitic carbon-based hybrid materials.

High-yield synthesis of CsPbBr3 nanoparticles: Diphenylphosphine as a reducing agent and its effect in Pb-seeding nucleation and growth

2021 ◽  
Author(s):  
Eder Antonio Castillo-Ruiz ◽  
Diana Fabiola Garcia-Gutierrez ◽  
Domingo Ixcóatl Garcia-Gutierrez
Keyword(s):  
Nucleation And Growth ◽  
Reducing Agent ◽  
High Yield ◽  
Reaction Yield ◽  
High Quality ◽  
Stabilizing Agents ◽  
Nucleation Sites ◽  
Nucleation Mechanisms ◽  
Attractive Option ◽  
Mass Increment

Abstract Based on the reported nucleation mechanisms for CsPbX3 and II-VI/IV-VI quantum dots, CsPbBr3 nanoparticles with a high reaction-yield, up to 393% mass-increment, were synthesized by the hot-injection method. The introduction of diphenylphosphine (DPP) as a reducing agent improved nanoparticle nucleation and growth, giving out evidence for Pb-seeding in CsPbBr3 nanoparticles formation. Additionally, a clear influence of the DPP in a CsPbBr3-Cs4PbBr6 incomplete phase transformation was observed, marked by the appearance of several PbBr2 nanoparticles, indicating the need for an improved ratio between the stabilizing agents and the precursors, due to the increased number of nucleation sites produced by the DPP. The resulting CsPbBr3 nanoparticles showed high quality, as they displayed 70%-90% photoluminescence quantum yield (PLQY), narrow size distribution with an average nanoparticle size of ~10 nm and the characteristic cubic morphology reported in previous works. This increment in CsPbBr3 nanoparticles’ reaction yield will contribute to making them a more attractive option for different optoelectronic applications.

A micromechanistic model of microstructure development during the combustion synthesis process

1995 ◽  
Vol 10 (4) ◽  
pp. 962-980 ◽  
Author(s):  
Yangsheng Zhang ◽  
Gregory C. Stangle
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Combustion Synthesis ◽  
Growth Parameters ◽  
Experimental Studies ◽  
Nucleation And Growth ◽  
Synthesis Process ◽  
Product Phase ◽  
Nucleation Sites ◽  
Rate Of Increase

The influence of the key nucleation and grain growth parameters on (i) the evolution of the microstructure of the product phase (on a microscopic level) and (ii) the combustion synthesis process (on a macroscopic level) were investigated for the combustion synthesis process in the Nb-C system. This work is an integral part of the continuing effort1–3 to develop a more complete theoretical model for combustion synthesis processes in general. In particular, the nucleation and growth of the NbC(s) product phase from the supersaturated liquid Nb/C mixture that appears briefly during the combustion synthesis process was treated in a greater detail by using a decidedly more sophisticated treatment of the nucleation and growth process (as developed in the field of rapid solidification and welding). It was shown that the microstructure of the NbC(s) product phase, including the evolution of the grain size and the size distribution, and the development of the grain's morphology, as well as the combustion wave velocity, are significantly influenced by the total number density of the nucleation sites, nmax, that are present in the system. The grain size distribution was shown to possess a monosize distribution, since during the combustion synthesis process the rate of increase of the degree of local undercooling was very high so that the nucleation process took place (locally) during a very brief period of time. This work provides a sound basis for developing a better control of the microstructure, and for a better understanding and interpretation of the results of related experimental studies.

Toward the High-Quality Graphene for Optoelectronic Applications by Optimization of the Growth and Transfer Parameters

2013 ◽  
Vol 834-836 ◽  
pp. 33-36
Author(s):  
Lang Wang ◽  
Jian Hua Zhang ◽  
Lian Qiao Yang
Keyword(s):  
Surface Condition ◽  
Chemical Vapor ◽  
Reflow Process ◽  
High Quality ◽  
Cu Substrate ◽  
Nucleation Sites ◽  
Higher Temperature ◽  
Transfer Parameters ◽  
Optoelectronic Applications ◽  
Pre Treatment

In this paper, the process parameters of graphene during fabrication and transfer are investigated. Cu is utilized as the substrate and chemical vapor deposition are used to obtain graphene. The results show that, the surface condition of the Cu substrate tends to be worse than as-received after a relatively higher temperature (1035°C) annealing and growth process, which lead to bad graphene quality. In addition, pre-treatment of Cu substrate by acetic acid is helpful to reduce the nucleation sites. Reflow process before PMMA etching is an effective method to eliminate the wrinkles formed during transfer. High-quality graphene for optoelectronic applications were obtained based on the optimized fabrication and transfer process.

scholarly journals In situ X-ray Diffraction Investigation of the Crystallisation of Perfluorinated Ce(IV)-based Metal-Organic Frameworks with UiO-66 and MIL-140 architectures

2020 ◽  
Author(s):  
Stephen Shearan ◽  
Jannick Jacobsen ◽  
Ferdinando Costantino ◽  
Roberto D’Amato ◽  
Dmitri Novikov ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Metal Organic Frameworks ◽  
Building Blocks ◽  
Nucleation And Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rate Determining Step ◽  
Wide Range ◽  
Metal Organic

We report on the results of a thorough <i>in situ</i> synchrotron powder X-ray diffraction study of the crystallisation in aqueous medium of two recently discovered perfluorinated Ce(IV)-based metal-organic frameworks (MOFs), analogues of the already well investigated Zr(IV)-based UiO-66 and MIL-140A, namely, F4_UiO-66(Ce) and F4_MIL-140A(Ce). The two MOFs were originally obtained in pure form in similar conditions, using ammonium cerium nitrate and tetrafluoroterephthalic acid as building blocks, and small variations of the reaction parameters were found to yield mixed phases. Here, we investigate the crystallisation of these compounds <i>in situ</i> in a wide range of conditions, varying parameters such as temperature, amount of the protonation modulator nitric acid (HNO<sub>3</sub>) and amount of the coordination modulator acetic acid (AcOH). When only HNO<sub>3</sub> is present in the reaction environment, F4_MIL-140A(Ce) is obtained as a pure phase. Heating preferentially accelerates nucleation, which becomes rate determining below 57 °C, whereas the modulator influences nucleation and crystal growth to a similar extent. Upon addition of AcOH to the system, alongside HNO<sub>3</sub>, mixed-phased products, consisting of F4_MIL-140A(Ce) and F4_UiO-66(Ce), are obtained. In these conditions, F4_UiO-66(Ce) is always formed faster and no interconversion between the two phases occurs. In the case of F4_UiO-66(Ce), crystal growth is always the rate determining step. An increase in the amount of HNO<sub>3</sub> slows down both nucleation and growth rates for F4_MIL-140A(Ce), whereas nucleation is mainly affected for F4_UiO-66(Ce). In addition, a higher amount HNO<sub>3</sub> favours the formation of F4_MIL-140A(Ce). Similarly, increasing the amount of AcOH leads to slowing down of the nucleation and growth rate, but favours the formation of F4_UiO-66(Ce). The pure F4_UiO-66(Ce) phase could also be obtained when using larger amounts of AcOH in the presence of minimal HNO<sub>3</sub>. Based on these <i>in situ</i> results, a new optimised route to achieving a pure, high quality F4_MIL-140A(Ce) phase in mild conditions (60 °C, 1 h) is also identified.

Polymorphic Crystallization of Metal-Metalloid-Glasses above the Glass Transition Temperature

1990 ◽  
Vol 205 ◽  
Author(s):  
U. Köster ◽  
U. Schünemann ◽  
G.B. Stephenson ◽  
S. Brauer ◽  
M. Sutton
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Homogeneous Nucleation ◽  
Nucleation And Growth ◽  
Time Dependent ◽  
Nucleation Sites ◽  
Temperature Time ◽  
Initial Results ◽  
Temperature Crystallization

Crystallization of metal-metalloid glasses is known to proceed by nucleation and growth processes. Using crystallization statistics in partially crystallized glasses, at temperatures below the glass transition temperature, time-dependent heterogeneous nucleation has been found to occur at a number of quenched-in nucleation sites [1]. Close to the glass transition temperature crystallization proceeds so rapidly that partially crystallized microstructures could not be obtained. Initial results from fully crystallized glasses exhibit evidence for a transient homogeneous nucleation process at higher temperatures [1,2].

Sign in / Sign up

Export Citation Format

Share Document