scholarly journals Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics

2017 ◽  
Vol 114 (20) ◽  
pp. 5107-5112 ◽  
Author(s):  
Ting Lei ◽  
Ming Guan ◽  
Jia Liu ◽  
Hung-Cheng Lin ◽  
Raphael Pfattner ◽  
...  
Keyword(s):  
Low Cost ◽  
Electronic Waste ◽  
Complementary Metal Oxide Semiconductor ◽  
Building Blocks ◽  
Consumer Electronics ◽  
Semiconducting Polymers ◽  
Oxide Semiconductor ◽  
Operating Voltage ◽  
Potential Applications ◽  
Transient Electronics

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal–oxide–semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m2) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics.

scholarly journals Low-cost microprocessed instrument for evaluating soil temperature profile

2000 ◽  
Vol 35 (11) ◽  
pp. 2269-2275
Author(s):  
PAULO ESTEVÃO CRUVINEL
Keyword(s):  
Soil Temperature ◽  
Temperature Profile ◽  
Gas Flow ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Automatic Mode ◽  
Agriculture Soil ◽  
Potential Applications ◽  
Management Changes

This paper describes a low-cost microprocessed instrument for in situ evaluating soil temperature profile ranging from -20.0°C to 99.9°C, and recording soil temperature data at eight depths from 2 to 128 cm. Of great importance in agriculture, soil temperature affects plant growth directly, and nutrient uptake as well as indirectly in soil water and gas flow, soil structure and nutrient availability. The developed instrument has potential applications in the soil science, when temperature monitoring is required. Results show that the instrument with its individual sensors guarantees ±0.25°C accuracy and 0.1°C resolution, making possible localized management changes within decision support systems. The instrument, based on complementary metal oxide semiconductor devices as well as thermocouples, operates in either automatic or non-automatic mode.

scholarly journals Ferroelectric HfO2-based materials for next-generation ferroelectric memories

2016 ◽  
Vol 06 (02) ◽  
pp. 1630003 ◽  
Author(s):  
Zhen Fan ◽  
Jingsheng Chen ◽  
John Wang
Keyword(s):  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Ferroelectric Materials ◽  
Oxide Semiconductor ◽  
Next Generation ◽  
New Class ◽  
Generation Cost ◽  
Potential Applications ◽  
Cost Efficient ◽  
Ferroelectric Memories

Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

scholarly journals Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3610
Author(s):  
Adrián J. Torregrosa ◽  
Emir Karamehmedović ◽  
Haroldo Maestre ◽  
María Luisa Rico ◽  
Juan Capmany
Keyword(s):  
Optical Communications ◽  
Near Infrared ◽  
Nonlinear Crystal ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Infrared Image ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Oxide Semiconductor ◽  
Free Space Optical

Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-semiconductor devices). This work is an extension of a previous study where we recently introduced this technique in the context of optical communications, in particular in FSOC (free-space optical communications). Herein, we present an image up-conversion system based on a 1064 nm Nd3+: YVO4 solid-state laser with a KTP (potassium titanyl phosphate) nonlinear crystal located intra-cavity where a laser beam at 1550 nm 2D spatially-modulated with a binary Quick Response (QR) code is mixed, giving an up-converted code image at 631 nm that is detected with an Si-based camera. The underlying technology allows for the extension of other IR spectral allocations, construction of compact receivers at low cost, and provides a natural way for increased protection against eavesdropping.

scholarly journals Light-Free Cross-Talk Analysis of a CMOS Infrared Detector Array

Proceedings ◽  
2020 ◽  
Vol 56 (1) ◽  
pp. 10
Author(s):  
Ying Dai ◽  
Syed Zeeshan Ali ◽  
Richard Hopper ◽  
Claudio Falco ◽  
Daniel Popa ◽  
...  
Keyword(s):  
Cross Talk ◽  
Low Cost ◽  
Infrared Detector ◽  
Complementary Metal Oxide Semiconductor ◽  
High Volume ◽  
Oxide Semiconductor ◽  
Simple Method ◽  
Monolithically Integrated ◽  
Thermal Cameras ◽  
Thermal Imagers

Low-cost infrared (IR) thermal cameras are powering a rising market of industrial and consumer applications. Complementary metal-oxide-semiconductor (CMOS)-based thermopile arrays are proven thermal imagers that can be monolithically integrated into low-cost and low-power-consumption formats for high-volume manufacturability. Here we present a simple method to evaluate the cross-talk of these arrays and propose a numerical model for device optimization.

scholarly journals Low-Cost 2D Index and Straightness Measurement System Based on a CMOS Image Sensor

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5461 ◽  
Author(s):  
Alain Küng ◽  
Benjamin A. Bircher ◽  
Felix Meli
Keyword(s):  
Measurement System ◽  
Degrees Of Freedom ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Measurement Systems ◽  
Starting Point ◽  
Sensor Properties

Accurate traceable measurement systems often use laser interferometers for position measurements in one or more dimensions. Since interferometers provide only incremental information, they are often combined with index sensors to provide a stable reference starting point. Straightness measurements are important for machine axis correction and for systems having several degrees of freedom. In this paper, we investigate the accuracy of an optical two-dimensional (2D) index sensor, which can also be used in a straightness measurement system, based on a fiber-coupled, collimated laser beam pointing onto an image sensor. Additionally, the sensor can directly determine a 2D position over a range of a few millimeters. The device is based on a simple and low-cost complementary metal–oxide–semiconductor (CMOS) image sensor chip and provides sub-micrometer accuracy. The system is an interesting alternative to standard techniques and can even be implemented on machines for real-time corrections. This paper presents the developed sensor properties for various applications and introduces a novel error separation method for straightness measurements.

scholarly journals Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Nanophotonics ◽  
2017 ◽  
Vol 6 (6) ◽  
pp. 1343-1352 ◽  
Author(s):  
Chuantong Cheng ◽  
Beiju Huang ◽  
Xurui Mao ◽  
Zanyun Zhang ◽  
Zan Zhang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Low Cost ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Optical Signal ◽  
Optical Interconnect ◽  
Optical Receiver ◽  
Oxide Semiconductor ◽  
Experimental Realization ◽  
Operation Speed

AbstractOptical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

scholarly journals A Smart Floating Gate Transistor with Two Control Gates for Active Noise Control

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 722
Author(s):  
Mao ◽  
Yang ◽  
Ma ◽  
Yan ◽  
Zhang
Keyword(s):  
Large Scale ◽  
Noise Control ◽  
Low Cost ◽  
Active Noise Control ◽  
Complementary Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Active Noise ◽  
Floating Gate Transistor

A smart floating gate transistor with two control gates was proposed for active noise control in bioelectrical signal measurement. The device, which is low cost and capable of large-scale integration, was implemented in a standard single-poly complementary metal–oxide–semiconductor (CMOS) process. A model of the device was developed to demonstrate the working principle. Theoretical analysis and simulation results proved the superposition of the two control gates. A series of test experiments were carried out and the results showed that the device was in accordance with the basic electrical characteristics of a floating gate transistor, including the current–voltage (I–V) characteristics and the threshold characteristics observed on the two control gates. Based on the source follower circuit, the experimental results proved that the device can reduce interference by more than 29 dB, which demonstrates the feasibility of the proposed device for active noise control.

Ethanol Sensor Based on Microring Resonator

2013 ◽  
Vol 655-657 ◽  
pp. 669-672
Author(s):  
Yao Chen ◽  
Yu Li Ding ◽  
Zheng Yu Li
Keyword(s):  
Chemical Sensors ◽  
Environmental Control ◽  
Low Cost ◽  
Virus Detection ◽  
Complementary Metal Oxide Semiconductor ◽  
Medical Diagnostics ◽  
Ethanol Solution ◽  
Microring Resonator ◽  
Oxide Semiconductor ◽  
Detection Mechanism

Chemical sensors is gaining long-standing interests due to their applications in many areas such as bacterial and virus detection, medical diagnostics, drug development, food safety and environmental control. Among the existing chemical sensors, optical planar sensors show promising and attempt to beat their commercialized competitors because of their robustness, lable-free detection mechanism, mature complementary metal oxide semiconductor (coms) fabrication technology and naturally low cost. Silicon nitride microring resonators were demonstrated as chemical sensors. Using the technique of coms technology, the microring devices were fabricated with 200 µm in radius. Performance of the devices was measured, which showed the quality factor (q) was up to 25,000. Sensitivity of 108.9336 nm per reflective index unit (nm/riu) and detection limit of 1.836×10-4 riu were demonstrated by using various concentrations of ethanol solution as analytes.

scholarly journals Structural analysis of Ni3Si2by EDT and dynamical refinement

2014 ◽  
Vol 70 (a1) ◽  
pp. C372-C372
Author(s):  
Cinthia Corrêa ◽  
Mariana Klementová ◽  
Lukáš Palatinus
Keyword(s):  
Structural Analysis ◽  
Electron Diffraction ◽  
Ohmic Contacts ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Diffraction Theory ◽  
Oxide Semiconductor ◽  
Metal Silicides ◽  
Precession Electron Diffraction ◽  
Low Toxicity

Transition metal silicides are known for properties such as low resistivity, high melting point, low cost and low toxicity, which are of great interest for applications in current silicon nanotechnology such as nano-complementary metal-oxide semiconductor (CMOS) devices, photovoltaics and ohmic contacts. In all these technologies the materials are used on nanoscale. To gain better insight into their properties, it is necessary to be able to determine the structure of the nanoparticles of these materials. Electron diffraction tomography combined with the precession electron diffraction (PED) are ideal techniques for structural analysis of nanocrystals. In this work Ni3Si2 nanowires with diameter of 25 nm were analyzed by EDT both with and without PED. The structure was refined using the kinematical and dynamical diffraction theory. The results show that the best results can be obtained of EDT and PED.

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