PN junction formation in CdTe by ion implantation and pulsed ruby laser annealing

ABSTRACTAnnealing of divacancies which were produced by 11B ion implantation was investigated under furnace, pulsed e-beam and pulsed ruby laser exposures. Despite orders of magnitude shorter exposure times for annealing and the concomitant expected high levels of electronic excitation and layer stress, we find that the thermal annealing mechanism observed for furnace annealing is an adequate description for divacancy annealing under e-beam exposure. The observed need for melting to remove divacancies by Q-switched laser annealing is also consistent with predictions based upon extrapolations from furnace annealing.

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A Channeling Study of Defect-Boron Complexes in Si

MRS Proceedings ◽

10.1557/proc-2-71 ◽

1980 ◽

Vol 2 ◽

Cited By ~ 1

Author(s):

M.L. Swanson ◽

L.M. Howe ◽

F.W. Saris ◽

A.F. Quenneville

Keyword(s):

Ion Implantation ◽

Nuclear Reaction ◽

Incident Energy ◽

Ruby Laser ◽

Laser Annealing ◽

Surface Region ◽

Alpha Particles ◽

Near Surface ◽

Annealing Temperatures ◽

Boron Complexes

ABSTRACTSi crystals were doped with 0.1–0.2 at% 11B in the near surface region by ion implantation followed by thermal diffusion at 1373 K or by ruby laser annealing. The position of the B atoms in the Si lattice was determined by channeling measurements, utilizing both the yield of H+ ions (of incident energy 0.7 MeV) backscattered from Si atoms and the yield of alpha particles from the 11B(p,α)8Be nuclear reaction. Initially, 95–99% of the B atoms were substitutional. Irradiation at 35 K or 293 K with 0.7 MeV H+ displaced B atoms from lattice sites. The displacement rate was greater at 293 K than at 35 K, and was greater for diffused samples than for laser annealed samples. Following 35 K irradiations, a large increase in the fraction fdB of displaced B atoms occurred during annealing near 240 K. At higher annealing temperatures, fdB decreased over a broad temperature range from 425–825 K. Angular scans through <110> channels for the laser annealed samples after 293 K irradiation or after 35 K irradiation plus 293 K annealing showed a pronounced narrowing of the dip in 11B(p,α)8Be yields compared with the dip in yields from Si, whereas no narrowing was observed for <100> channels. These results indicate that B atoms were displaced into specific lattice sites by the migration of an interstitial B defect (the EPR G28 defect) near 240 K.

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The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽

10.3390/ma14154138 ◽

2021 ◽

Vol 14 (15) ◽

pp. 4138

Author(s):

Ye Yuan ◽

Yufang Xie ◽

Ning Yuan ◽

Mao Wang ◽

René Heller ◽

...

Keyword(s):

Curie Temperature ◽

Ion Implantation ◽

Diluted Magnetic Semiconductors ◽

Laser Annealing ◽

Magnetic Semiconductors ◽

Dilute Magnetic Semiconductors ◽

Pulsed Laser ◽

Laser Melting ◽

Co Doping ◽

Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

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Effect of Low Temperature Annealing on pn Junction Formation using Si Paste

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm50988.2021.9420845 ◽

2021 ◽

Author(s):

Huan Zhu ◽

Yusuke Kuboki ◽

Morihiro Sakamoto ◽

Yoshimine Kato

Keyword(s):

Low Temperature ◽

Low Temperature Annealing ◽

Pn Junction ◽

Junction Formation

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Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film

Electronics Letters ◽

10.1049/el:19981653 ◽

1998 ◽

Vol 34 (25) ◽

pp. 2436

Author(s):

T. Oishi ◽

A. Furukawa ◽

K. Shiozawa ◽

Y. Abe ◽

Y. Tokuda

Keyword(s):

Oxide Film ◽

Ion Implantation ◽

High Performance ◽

Shallow Junction ◽

Thin Oxide Film ◽

Junction Formation ◽

Thin Oxide ◽

Length Reduction

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Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic

MRS Proceedings ◽

10.1557/proc-4-553 ◽

1981 ◽

Vol 4 ◽

Author(s):

E. Fogarassy ◽

R. Stuck ◽

M. Toulemonde ◽

P. Siffert ◽

J.F. Morhange ◽

...

Keyword(s):

Ruby Laser ◽

Laser Annealing ◽

Pulsed Laser ◽

Amorphous Layer ◽

High Concentration ◽

Topographic Analysis ◽

Pulsed Laser Annealing ◽

Residual Hydrogen ◽

Silicon Target ◽

Amorphous Si

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

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Low temperature annealing of nanocrystalline Si paste for pn junction formation

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106093 ◽

2021 ◽

Vol 135 ◽

pp. 106093

Author(s):

Yusuke Kuboki ◽

Huan Zhu ◽

Morihiro Sakamoto ◽

Hiroshige Matsumoto ◽

Kungen Teii ◽

...

Keyword(s):

Low Temperature ◽

Low Temperature Annealing ◽

Pn Junction ◽

Junction Formation ◽

Nanocrystalline Si

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Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

MRS Proceedings ◽

10.1557/proc-1-375 ◽

1980 ◽

Vol 1 ◽

Author(s):

Nobuyoshi Natsuaki ◽

Takao Miyazaki ◽

Makoto Ohkura ◽

Toru Nakamura ◽

Masao Tamura ◽

...

Keyword(s):

Low Temperature ◽

Laser Pulse ◽

Laser Irradiation ◽

Ruby Laser ◽

Laser Annealing ◽

Bipolar Transistors ◽

Pulse Irradiation ◽

Irradiation Effects ◽

Furnace Annealing ◽

Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

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