Asymmetric capacitance-voltage characteristics of (Bi3.25, La0.75)Ti3O12 thin films grown on Si

2001 ◽  
Vol 40 (1-5) ◽  
pp. 225-234 ◽  
Author(s):  
Taekjib Choi ◽  
Youngsung Kim ◽  
Jaichan Lee
Keyword(s):  
Thin Films ◽  
Capacitance Voltage

Evaluation of Sub-Gap States in Amorphous In-Ga-Zn-O Thin Films Treated with Various Process Conditions

2014 ◽  
Vol 1633 ◽  
pp. 55-60 ◽  
Author(s):  
Kazushi Hayashi ◽  
Aya Hino ◽  
Hiroaki Tao ◽  
Yasuyuki Takanashi ◽  
Shinya Morita ◽  
...  
Keyword(s):  
Thin Films ◽  
Peak Position ◽  
Process Conditions ◽  
Charge Densities ◽  
Capacitance Voltage ◽  
Time Regime ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Gap States ◽  
Capacitance Transient

ABSTRACTIn the present study, the sub-gap states of amorphous In-Ga-Zn-O (a-IGZO) thin films treated with various process conditions have been evaluated by means of capacitance-voltage (C-V) characteristics and isothermal capacitance transient spectroscopy (ICTS). It was found that the space-charge densities of the a-IGZO decreased as the oxygen partial pressure was increased during the sputtering of a-IGZO thin films. The ICTS spectra for the 4, 8, and 12 % samples were similar and the peak positions were found to be around 1 × 10-2 s at 180 K. On the other hand, the peak position for the 20 % sample shifted to a longer time regime and was located at around 2 × 10-1 s at 180 K. The total densities of the traps for the 4, 8, and 12 % samples were calculated to be 5−6 × 1016 cm-3, while that for 20 % was one order of magnitude lower than the others. From Thermal desorption spectrometer, it was found that desorption of Zn atoms started at a temperature higher than 300 °C for the 4 % sample, while desorption of Zn was not observed for the 20 % sample. The introduction of the sub-gap states could be attributed to oxygen-rich and/or Zn-deficient defects in the a-IGZO thin films formed during thermal annealing.

Capacitance–voltage measurements of Ge–Sb–Te thin films

2007 ◽  
Vol 77 (1) ◽  
pp. 015701 ◽  
Author(s):  
H Ghamlouche ◽  
S T Mahmoud ◽  
N Qamhieh ◽  
S Ahmed ◽  
H Al-Shamisi
Keyword(s):  
Thin Films ◽  
Capacitance Voltage

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

FABRICATION AND ELECTRICAL PROPERTIES OF Au/PVDF-TrFE/LaZrOx/Si(100) STRUCTURE

2010 ◽  
Vol 24 (22) ◽  
pp. 4203-4208 ◽  
Author(s):  
HUI-SEONG HAN ◽  
GWANG-GEUN LEE ◽  
BYUNG-EUN PARK
Keyword(s):  
Thin Films ◽  
Polyvinylidene Fluoride ◽  
Oxide Thickness ◽  
Voltage Sweep ◽  
Window Width ◽  
Capacitance Voltage ◽  
Coating Method ◽  
Insulator Layers ◽  
Lanthanum Zirconium Oxide ◽  
P Type

Metal-ferroelectric-insulator-semiconductor structure capacitors with a polyvinylidene fluoride trifluoroethylene (75/25) (PVDF-TrFE) ferroelectric and a lanthanum zirconium oxide ( LaZrO x) insulator layers were fabricated on a p-type Si(100) substrate in this work. The thin films were prepared using the spin-coating method. The LaZrO x thin films were crystallized at 750°C for 30 min in an O 2 ambient. Negligible hysteresis was observed from the C–V (capacitance-voltage) characteristic of the LaZrO x/ Si structure. The equivalent oxide thickness (EOT) was about 8.2 nm. Then the PVDF-TrFE film was spin-coated on the LaZrO x/ Si structure. To crystallize the PVDF-TrFE, the structure was annealed at 165°C for 30 min. The memory window width in the C–V curve of the Au/PVDF - TrFE/LaZrO x/ Si structure was about 4 V for a voltage sweep of ±5 V, and the leakage current density was about 10-8 A/cm 2 at 35 kV/cm for a 100-nm-thick film.

Smart Heterostructures Based on Solid Solution ZnCdHgTe

2003 ◽  
Vol 785 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit ◽  
Macej Oszwaldowsky
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Spectral Range ◽  
Room Temperature ◽  
Signal Frequency ◽  
Applied Bias ◽  
Current Voltage ◽  
Wide Range ◽  
Capacitance Voltage ◽  
First Time

ABSTRACTCurrent – voltage (IVC) and capacitance – voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films ZnxCdyHg1-x-yTe were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 μm. Electric characteristics of the as-grown structures were examined under T = 77–290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50–0.65 μm.

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