scholarly journals Simulation Study of Single-Event Burnout for the 4H-SiC VDMOSFET with N+ Split Source

2022 ◽  
Vol 2148 (1) ◽  
pp. 012011
Author(s):  
Jiancheng Zhou ◽  
Chenghao Yu ◽  
Ying Wang
Keyword(s):  
Heavy Ion ◽  
Supply System ◽  
Maximum Temperature ◽  
Single Event ◽  
Drain Voltage ◽  
Side Walls ◽  
Simulation Results ◽  
Silvaco Atlas ◽  
Numerical Simulator ◽  
High Linear Energy Transfer

Abstract Silicon Carbide (SiC) power MOSFET is the next generation device in the supply system of spacecraft. However, the current degradation or catastrophic failure of the power device could be induced when a drain voltage exceeds critical condition. In this article, an improved VDMOSFET structure for the Single-Event Burnout (SEB) is demonstrated. The improved power VDMOSFET includes a P+ shielding region at the JFET region. Meanwhile, forming a CSL layer by ion-implantation at the JFET to reduce the specific on-resistance. The device is etched in both sides to form trench and then implanting N-type impurities at the side walls of the trench to form the N+ split source (SDS-VDMOSFET). The 2-D numerical simulator Silvaco Atlas was used to study the SEB performance for the 1.2 kV-rated SiC SDS-VDMOSFET in a high linear energy transfer (LET) value of 0.5 pC/μm. The simulation results show that the improved structure can effectively reduce the peak lattice temperature induced by heavy-ion and increase the SEB threshold voltage compared with the standard VDMOSFET. Furthermore, the improved structure also presents a lower specific on-resistance. As a result, the maximum temperature of the standard VDMOSFET has exceeded 3000 K at a drain voltage of 400 V. However, the maximum temperature of the improved VDMOSFET is only 2090 K at a drain voltage of 800 V.

3D Simulation of Heavy-Ion Induced Charge Collection in Sub-100nm MOS-FETs Using Strained Silicon-Germanium

2014 ◽  
Vol 918 ◽  
pp. 237-242
Author(s):  
Bin Zhou ◽  
Xin Chun Wu ◽  
Ming Xue Huo
Keyword(s):  
Bias Voltage ◽  
Silicon Germanium ◽  
Heavy Ion ◽  
Strained Silicon ◽  
Single Event ◽  
Single Event Transient ◽  
Simulation Results ◽  
Tcad Simulation ◽  
Current Duration ◽  
The Impact

Single event transient of a PMOS using strained Silicon-Germanium in a sub-100nm bulk process is studied by 3D TCAD simulation. The impact of bias voltage, temperature, LET, and struck position on SET is considered. Our simulation results demonstrate that bias voltage in the range 0.8 to 1.2V greatly influence the amplitude of SET current. Temperature has a stronger influence on a SiGe channel PMOS than a Si-channel PMOS. Both SET current duration and total collection charge increase as LET increases, and SET current duration and total collection of a SiGe channel PMOS are larger than that of Si channel PMOS. These simulation results are beneficial to the space application of SiGe circuits.

scholarly journals POSSIBILITY OF FORMING A LARGE DCC IN ULTRA-RELATIVISTIC HEAVY-ION COLLISIONS

2000 ◽  
Vol 15 (15) ◽  
pp. 2269-2288
Author(s):  
SANATAN DIGAL ◽  
RAJARSHI RAY ◽  
SUPRATIM SENGUPTA ◽  
AJIT M. SRIVASTAVA
Keyword(s):  
Three Dimensional ◽  
Thermal Fluctuations ◽  
Heavy Ion ◽  
High Energy ◽  
Chiral Condensate ◽  
Relativistic Heavy Ion Collisions ◽  
Maximum Temperature ◽  
Chiral Field ◽  
Heavy Nuclei ◽  
True Vacuum

We demonstrate the possibility of forming a single, large domain of disoriented chiral condensate (DCC) in a heavy-ion collision. In our scenario, rapid initial heating of the parton system provides a driving force for the chiral field, moving it away from the true vacuum and forcing it to go to the opposite point on the vacuum manifold. This converts the entire hot region into a single DCC domain. Subsequent rolling down of the chiral field to its true vacuum will then lead to emission of a large number of (approximately) coherent pions. The requirement of suppression of thermal fluctuations to maintain the (approximate) coherence of such a large DCC domain, favors three-dimensional expansion of the plasma over the longitudinal expansion even at very early stages of evolution. This also constrains the maximum temperature of the system to lie within a window. We roughly estimate this window to be about 200–400 MeV. These results lead us to predict that extremely high energy collisions of very small nuclei (possibly hadrons) are better suited for observing signatures of a large DCC. Another possibility is to focus on peripheral collisions of heavy nuclei.

Impact of heavy ion energy and species on single-event upset in commercial floating gate cells

2021 ◽  
Vol 120 ◽  
pp. 114128
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Peng-Fei Zhai ◽  
Li Cai ◽  
Tao Liu ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Floating Gate ◽  
Single Event Upset ◽  
Single Event ◽  
Ion Energy

scholarly journals The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 440
Author(s):  
Yanan Liang ◽  
Rui Chen ◽  
Jianwei Han ◽  
Xuan Wang ◽  
Qian Chen ◽  
...  
Keyword(s):  
Low Voltage ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Track Length ◽  
Single Event ◽  
Single Event Effects ◽  
Heavy Ion Irradiation ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Tcad Simulation

An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

THE BLACK HOLE ENTROPY BOUND AND THE MAXIMUM TEMPERATURE FOR MESON FORMATION IN THE NUCLEAR FIREBALL

1991 ◽  
Vol 06 (33) ◽  
pp. 3039-3045 ◽  
Author(s):  
JISHNU DEY ◽  
MIRA DEY ◽  
MARCELO SCHIFFER ◽  
LAURO TOMIO
Keyword(s):  
Black Hole ◽  
Simple Model ◽  
Black Hole Entropy ◽  
Heavy Ion ◽  
Black Hole Thermodynamics ◽  
Maximum Temperature ◽  
Ion Collisions ◽  
Pion Interferometry ◽  
Entropy Bound ◽  
Confined System

The entropy bound from black hole thermodynamics can be invoked to set limits for temperatures at which hadrons can survive as a confined system. We find that this implies that the pion can be formed in heavy ion collisions, much later than heavier mesons, for example the ρ-meson, when the fireball is cooler. The temperature found in a simple model agree qualitatively with experiment. We also suggest that this may be the reason why in pion interferometry experiments the space-time volume of the pion source seems large.

TPA Laser and Heavy-Ion SEE Testing: Complementary Techniques for SDRAM Single-Event Evaluation

2009 ◽  
Vol 56 (6) ◽  
pp. 3334-3340 ◽  
Author(s):  
Ray L. Ladbury ◽  
Joe Benedetto ◽  
Dale McMorrow ◽  
Stephen P. Buchner ◽  
Kenneth A. Label ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Single Event ◽  
Complementary Techniques
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