scholarly journals Study of Ar+ and He+ implanted SOS-structures

2021 ◽  
Vol 906 (1) ◽  
pp. 012022
Author(s):  
Amiran Bibilashvili ◽  
Lado Jibuti ◽  
Zurab Jibuti ◽  
Givi Skhiladze
Keyword(s):  
Work Function ◽  
Reflection Spectrum ◽  
High Efficiency ◽  
Negative Charge ◽  
Silicon On Insulator ◽  
Optical Characteristics ◽  
Reference List ◽  
Optical Reflection ◽  
Optical Reflection Spectrum

Abstract In the work Silicon – on - insulator nanostructures after implantation by various doses of ions 4He+ and 40Ar+ are investigated. Researches were carried out by measurement of optical reflection spectrum and magnitude of work function of an electron. It is shown that ions 40Ar+ in Silicon – on - insulator nanostructures, providing high efficiency of gettering influence, incorporate the neutral divacancy responsible for an observable minimum in ranges of reflection 0.73-0.75eV. As a result of implanted by ions 4He+ the gettering doesn’t occur and the entered defects are divacancies with one negative charge, responsible for an observable maximum in reflection ranges 0.73-0.75eV. The received results indicate possibility of purposeful updating of Silicon – on - insulator nanostructures for improvement of their optical characteristics. Start your abstract here… The abstract should include the purpose of research, principal results and major conclusions. References should be avoided, if it is essential, only cite the author(s) and year(s) without giving reference list. Prepare your abstract in this file and then copy it into the registration web field.

Metal corrosion measurement method based on optical reflection spectrum analysis

2018 ◽  
Author(s):  
Hee Taek Cho ◽  
Ok Rak Lim ◽  
Gyeong-Seo Seo ◽  
Kyu Hyuk Lee ◽  
Tae Jun Park ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Reflection Spectrum ◽  
Measurement Method ◽  
Metal Corrosion ◽  
Optical Reflection ◽  
Optical Reflection Spectrum

scholarly journals Solution-Processed Transparent Conducting Electrodes for Flexible Organic Solar Cells with 16.61% Efficiency

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Juanyong Wan ◽  
Yonggao Xia ◽  
Junfeng Fang ◽  
Zhiguo Zhang ◽  
Bingang Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Organic Solar Cells ◽  
High Performance ◽  
High Efficiency ◽  
Electrical Stability ◽  
Solution Processed ◽  
Good Thermal Stability ◽  
Transparent Conducting ◽  
High Flexibility

AbstractNonfullerene organic solar cells (OSCs) have achieved breakthrough with pushing the efficiency exceeding 17%. While this shed light on OSC commercialization, high-performance flexible OSCs should be pursued through solution manufacturing. Herein, we report a solution-processed flexible OSC based on a transparent conducting PEDOT:PSS anode doped with trifluoromethanesulfonic acid (CF3SO3H). Through a low-concentration and low-temperature CF3SO3H doping, the conducting polymer anodes exhibited a main sheet resistance of 35 Ω sq−1 (minimum value: 32 Ω sq−1), a raised work function (≈ 5.0 eV), a superior wettability, and a high electrical stability. The high work function minimized the energy level mismatch among the anodes, hole-transporting layers and electron-donors of the active layers, thereby leading to an enhanced carrier extraction. The solution-processed flexible OSCs yielded a record-high efficiency of 16.41% (maximum value: 16.61%). Besides, the flexible OSCs afforded the 1000 cyclic bending tests at the radius of 1.5 mm and the long-time thermal treatments at 85 °C, demonstrating a high flexibility and a good thermal stability.

scholarly journals Indication of the Coronavirus Model Using a Nanowire Biosensor

Proceedings ◽  
2020 ◽  
Vol 60 (1) ◽  
pp. 50
Author(s):  
Vladimir Generalov ◽  
Olga Naumova ◽  
Dmitry Shcherbakov ◽  
Alexander Safatov ◽  
Boris Zaitsev ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Charge ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
Nanowire Surface ◽  
Before And After ◽  
Effect Transistor ◽  
Current Value ◽  
Silicon On Insulator Technology

The presented results indicate virus-like particles of the coronavirus (CVP) using a nanowire (NW) biosensor based on silicon-on-insulator technology. In the experiment, we used suspensions of CVP and of specific antibodies to the virus. Measurements of the current value of the field-effect transistor before and after the introduction of the CVP on the surface of the nanowire were performed. Results showed antibody + CVP complexes on the phase section with the surface of the nanowire modulate the current of the field-effect transistor; CVP has an electrically positive charge on the phase section “nanowire surface-viral suspension»; antibody + CVP complexes have an electrically negative charge on the phase section “nanowire surface-viral suspension”; the sensitivity of the biosensor is made up of 10−18 M; the time display was 200–300 s.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

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