Variations of morphology of fluoropolymer thin films vs deposition conditions

2021 ◽  
Author(s):  
Konstantin Grytsenko ◽  
Yurii Kolomzarov ◽  
Petro Lytvyn ◽  
Iryna Lebedyeva ◽  
Elena Vashchilina
Keyword(s):  
Thin Films ◽  
Deposition Conditions

scholarly journals Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 724
Author(s):  
Tong Li ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Optical Properties ◽  
Surface Morphology ◽  
Magnesium Hydroxide ◽  
Dry Deposition ◽  
Visible Range ◽  
Substrate Heating ◽  
Water Effects ◽  
Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

Microstructure Evolution of Epitaxial (Ba, Sr) TiO3/ (001) HgO Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
V.A. Alyoshin ◽  
E.V. Sviridov ◽  
V.I.M. Hukhortov ◽  
I.H. Zakharchenko ◽  
V.P. Dudkevich
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Microstructure Evolution ◽  
Three Dimensional ◽  
Gas Pressure ◽  
Smooth Surfaces ◽  
Two Dimensional ◽  
Surface Versus ◽  
Deposition Conditions

ABSTRACTSurface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)TiO3 films rf-sputtered on (001) HgO crystal cle-avage surface versus the oxygen worKing gas pressure P and subst-rate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. The deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.

Influence of deposition conditions on nanostructured InSe thin films

2019 ◽  
Vol 19 (12) ◽  
pp. 1404-1413 ◽  
Author(s):  
Kübra Çınar Demir ◽  
Emre Demir ◽  
Seniye Yüksel ◽  
Cevdet Coşkun
Keyword(s):  
Thin Films ◽  
Deposition Conditions

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

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