Comparative studies on the morphological, structural and optical properties of NiO thin films grown by vacuum and non-vacuum deposition techniques

Author(s):  
Mohammad Shah Jamal ◽  
M.S. chowdhury ◽  
Saraswati Bajgai ◽  
M Hossain ◽  
A. Laref ◽  
...  

Abstract The structural and optical characteristics of Nickel oxide thin films (NiOTF) formed on the soda-lime glass substrate (SLG) under vacuum and non-vacuum conditions are investigated in this work. The difference between RFMS (Radio Frequency Magnetron Sputtering; vacuum) and SP (spray pyrolysis; non-vacuum) was helpful in the development of NiOTF. Deposited films data for this study were characterized by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), scanning probe microscopy (SPM), and optical spectrophotometer. Structural studies disclosed that NiOTF developed via RFMS technique was more uniform with large crystals and lower surface roughness in contrast to that of developed via SP technique. Transmittance spectrum divulged that the transmittance of spray pyrolyzed NiO films are ~10% less than that of ones produced by RFMS. Urbach energy analysis of NiOTF developed by RFMS and SP affirmed the findings of structural studies.

2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
William Vallejo ◽  
Carlos Diaz-Uribe ◽  
G. Gordillo

In this work, we fabricated system In(O,OH)S/i-ZnO/n+-ZnO to be used as potential optical window in thin films solar cells. i-ZnO/n+-ZnO thin films were synthesized by reactive evaporation (RE) method and In(O,OH)S thin films were synthesized by chemical bath deposition (CBD) method; all thin films were deposited on soda lime glass substrates. Thin films were characterized through X-ray diffraction (XRD), atomic force microscopy (AFM), and spectral transmittance measurements. Structural results indicated that both thin films were polycrystalline; furthermore, morphological results indicated that both thin films coated uniformly soda lime glass substrate; besides, optical characterization indicated that system had more than 80% of visible radiation transmittance.


2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.


2015 ◽  
Vol 22 (01) ◽  
pp. 1550009
Author(s):  
YA MING SUN ◽  
DONG LONG ◽  
XIANG CHENG MENG ◽  
ZHONG HUA ◽  
BO LI ◽  
...  

Cu 2 ZnSnS 4 thin films were prepared on soda-lime glass by sulfurization of the Cu / Sn / ZnS precursors. The microstructure, morphology and optical properties of the films were investigated by X-ray diffraction (XRD), Raman scattering (Raman), scanning electron microscopy (SEM) and UV-visible spectrophotometer (UV-Vis). The SEM images of the precursor and the thin films annealed at different temperatures are very different due to their different surface products. The absorption spectrum shifts to high-wave band region with increasing annealing temperatures. The precursor thin film annealed at 500°C for 2 h forms a single CZTS phase with kesterite structure and the bandgap is estimated to be 1.54 eV.


2012 ◽  
Vol 528 ◽  
pp. 214-218
Author(s):  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
Xue Yan Zhang ◽  
Xiao Yu Liu

CIGS thin films were prepared by selenization of Cu-In-Ga-Se precursors, as a new method, the effects of selenization temperature on the properties of CIGS thin films were studied. First, Cu-In-Ga-Se precursors were deposited onto Mo-coated soda lime glass by evaporation and sputtering method. Then, precursors were selenized at various temperatures in N2 atmosphere for 120 min to form CIGS thin films. The degree of reaction and morphology of films as a function of selenization temperature were analyzed. By means of field emission scanning electron microscope (SEM) and X-ray diffraction (XRD), it was found that CIGS thin films selenized at 450°C exhibit chalcopyrite phase with preferred orientation along the (112) plane.


2013 ◽  
Vol 291-294 ◽  
pp. 703-707
Author(s):  
Gui Shan Liu ◽  
Hao Na Li ◽  
Xiao Yue Shen ◽  
Zhi Qiang Hu ◽  
Hong Shun Hao

CIGS thin films were deposited on soda lime glass by one-step magnetron sputtering using a single quaternary-CIGS target in stoichiometric proportions. The influences of substrate temperature on the structural, optical, and electrical properties of Cu(In,Ga)Se2 (CIGS) thin films were investigated. The phase structure of CIGS thin films was characterized by X-ray diffraction (XRD). The morphology and thickness of CIGS thin films were observed by Scanning Electron Microscope (SEM). The absorption coefficient of CIGS thin films was measured by Ultraviolet-visible Spectrophotometer. Four-point probe method was used to test the resistivity of CIGS thin films. Based on the results of characterization, the increase in crystallite size of CIGS was found to be significantly noticeable with increasing substrate temperature. UV-vis measurement analysis suggested that CIGS thin films deposited at different substrate temperatures had high absorption coefficient (~104 cm-1) and optical band gap (1.07-1.23 eV). The substrate temperature dependence of the resistivity of the films indicated that the resistivity of the films fall to about 0.5 Ω۰cm as the substrate glass was heated up to 300 °C.


2017 ◽  
Vol 2 (1) ◽  
pp. 54-59 ◽  
Author(s):  
Shih-Fan Chen ◽  
Shea-Jue Wang ◽  
Win-Der Lee ◽  
Ming-Hong Chen ◽  
Chao-Nan Wei ◽  
...  

The back contact electrode with molybdenum (Mo) thin film is crucial to the performance of Cu(In, Ga)Se2 solar cells. In this research, Mo thin films were fabricated by direct current sputtering to attain low-resistivity molybdenum films on soda-lime glass substrates with good adhesion. The films were sputtered onto substrates in 500 nm thickness and nominally held at room temperature with deposition conditions of power and working pressure. Low resistivity (17-25 μΩ∙cm) of bi-layer molybdenum thin films were achieved with combination of top layer films deposited at 300 W with different working pressure, and bottom fixing layer film deposited at 300 W with 2.5 mTorr which adhered well on glass. Films were characterized the electrical properties, structure, residual stress, morphology by using the Hall-effect Measurement, X-ray Diffraction, and Field-Emission Scanning Electron Microscopy, respectively, to optimize the deposition conditions.


1996 ◽  
Vol 436 ◽  
Author(s):  
C. R. Ottermann ◽  
K. Bange ◽  
A. Braband ◽  
H. Haefke ◽  
W. Gutmannsbauer

AbstractAdhesion failures of Ti2 and Ta2O5 thin films deposited by reactive evaporation (RE), reactive ion plating (IP) and plasma impulse chemical vapour deposition (PICVD) on fused silica, AF 45, TEMPAX and soda-lime glass substrates are investigated by means of a micro-scratch tester. The oxide films possess thickness between 60 and 500 nm and show different mass densities depending on the deposition conditions. Scratch testing exhibits well pronounced detachment for thicker films on hard substrates. The clearance of the scratch signal is reduced with decreasing layer thickness or for softer substrate materials. The test results are also influenced by the various substrates and different chemical and mechanical properties of the films due to the alternate deposition techniques.


2014 ◽  
Vol 1603 ◽  
Author(s):  
Yong Yan ◽  
Shasha Li ◽  
Zhou Yu ◽  
Yong Zhang ◽  
Yong Zhao

ABSTRACTCu2ZnSnSe4 films were deposited on soda lime glass substrates at room temperature by one-step radio frequency magnetron-sputtering process. The effect of sputtering power on the properties of one-step deposited Cu2ZnSnSe4 thin films has been investigated. The deposited films might be suitable for the absorber layers in the solar cells. The chemical composition and the preferred orientation of the films can be optimized by the sputtering power.


2012 ◽  
Vol 05 ◽  
pp. 661-669 ◽  
Author(s):  
BAHRAM ABDOLLAHI NEJAND ◽  
SOHRAB SANJABI ◽  
VAHID AHMADI

TiO 2 thin film was deposited by a DC reactive magnetron sputtering on ZnO /soda-lime glass substrate and single crystal SiO 2 below 200 °C. ZnO layer was used as a buffer layer. Deposition was performed at Ar + O 2 gas mixture with a pressure of 1.0 Pa and oxygen with a constant pressure of 0.2 Pa. The TiO 2 / ZnO thicknesses were approximately 1000 nm and 80 nm, respectively. As-deposited films were annealed at 400 °C. The structure and morphology of deposited layers were evaluated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The transmittance of the films was measured using ultraviolet–visible light (UV–vis) spectrophotometer. Photocatalytic activities of the samples were evaluated by the degradation of 2-propanol. The microstructure of annealed films was anatase, having improved photocatalytic activity. The surface grain size of TiO 2 thin film after annealing was found about 25-35 nm and crystal size was approximately 8 nm. By using ZnO thin film as buffer layer, the photocatalytic property of TiO 2 films was improved.


2014 ◽  
Vol 787 ◽  
pp. 31-34 ◽  
Author(s):  
Jian Sheng Wang ◽  
Song Li ◽  
Jia Jia Cai ◽  
Yu Ping Ren ◽  
Gao Wu Qin

Cu2ZnSnS4thin films were fabricated by one-step RF magnetron sputtering of a single quaternary Cu2ZnSnS4(CZTS) chalcogenide target on Mo/soda lime glass substrate, followed by post sulfurization using S vapor obtained from elemental S powders. The films were thermally annealed in Ar atmosphere to improve the crytallinity. The sulfurization temperature was fixed at 550°C. Both as-deposited and post-sulfured samples are close to the stoichiometric composition, meanwhile without any second phase was detected by XRD. As-deposited film has a compact columnar grain characteristic. Although crystallinity was improved with increasing annealing time, this characteristic disappeared after post-sulfured.


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