An Organic, Threshold Voltage Based, All PMOS, Voltage Reference Generator for Flexible Sensor Tags

2021 ◽  
Author(s):  
Mohammad Azimi ◽  
Mehdi Habibi ◽  
Hamid Reza Karimi-Alavijeh
Keyword(s):  
Integrated Circuits ◽  
Organic Semiconductors ◽  
Threshold Voltage ◽  
Integrated Circuit ◽  
Work Performance ◽  
Voltage Reference ◽  
Electronic Circuits ◽  
Performance Factors ◽  
Reference Generator ◽  
P Type

Abstract The developments and advances achieved in organic semiconductors have promised lower costs for integrated circuit productions and also the fabrication of electronic circuits using printed technology on unconventional substrates such as plastic, clothing, and even skin. An important building block essential to most electronic circuits is a voltage, process, and temperature independent potential generator which can be used to bias amplifiers and produce a fixed reference for sensor devices. The generation of a voltage reference is also important for voltage regulators. Currently, most reported organic integrated circuits use only p-type OFETs in their circuits due to simpler fabrication procedures. Furthermore, air stable p-type organic semiconductors such as Pentacene and CuPc are well characterized. In this paper, a low power two stage all PMOS voltage reference generator is proposed. As properties such as threshold voltage value and device aging are dependent on the OFET structure, the type of device chosen for this purpose will have a direct impact on the circuit performance. Three different types of OFETs with silver, copper, and gold drain/source electrodes are studied in this work. Performance factors such as Line Sensitivity (LS), Temperature Coefficient (TC), power consumption, time constant, and output drifts of the fabricated integrated circuits are measured and reported to verify the characteristics of the proposed circuit. It is shown that the drain/source metal choice affects the threshold voltage dependent output potential of the reference generators.

Research the load capacity of microcircuits

2020 ◽  
Vol 23 (3) ◽  
pp. 74-81
Author(s):  
Katerina S. Yarantseva ◽  
Gennady P. Shopin ◽  
Mikhail N. Piganov ◽  
Vladimir S. Andrusenko
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Pulse Generator ◽  
Load Capacity ◽  
Rectangular Pulse ◽  
Voltage Reference ◽  
Pulse Counter ◽  
Operating Modes ◽  
Low Levels ◽  
Definition Of

The device for the definition of the integrated circuits load-driving capability is offered. Device for determining the output capability of microcircuits refers to the field of microminiaturization and the technology of radio electronic equipment and can be used to control the parameters of microcircuits during their production. The device contains a rectangular pulse generator, an integrated circuit that is being tested, a repeater, load, a switch, an AND gate, a comparator, a pulse counter and a voltage reference, a vibrator, a reversible pulse counter, a decoder, and an indicator. Technical result when implementing the disclosed solution is high accuracy and reliability of determining load capacity of microcircuits. The proposed device allows increasing accuracy and reliability of defining circuits load-driving capacity. It also allows testing of TTL, Schottky-TTL, and MOSFET circuits. There are two switchable operating modes for testing fan-out for logical high and low levels. It is easy to replace a circuit that is being tested and load.

Implementing Intelligence in Silicon Integrated Circuits Using Neuron-Like High-Functionality Transistors

1996 ◽  
Vol 8 (6) ◽  
pp. 508-515 ◽  
Author(s):  
Tadashi Shibata ◽  
◽  
Tadahiro Ohmi
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Intelligent Systems ◽  
Circuit Complexity ◽  
Primary Objective ◽  
Electronic Circuits ◽  
Circuit Element ◽  
Hardware Configuration ◽  
Input Gate ◽  
Intelligent Data Processing

The primary objective of this article is not to present integrated circuit implementation of neural networks in the sense that neurophysiological models are constructed in electronic circuits, but to describe new-architecture intelligent electronic circuits built using a neuron-like high-functionality transistor as a basic circuit element. This has greatly reduced the VLSI hardware/software burden in carrying out intelligent data processing and would find promising applications in robotics. The transistor is a multiple-input-gate thresholding device called a neuron MOSFET (neuMOS or νMOS) due to its functional similarity to a simple neuron model. vMOS circuits are characterized by a high degree of parallelism in hardware computation, large flexibility in the hardware configuration, and a dramatic reduction in circuit complexity compared to conventional integrated circuits. As a result, a number of new-concept circuits has been developed. Examples include a real-time reconfigurable logic circuit called flexware and associative memory conducting a fully parallel search for the most similar targets. A simple hardware model for self-learning systems is also presented. The enhancement in functionality at a very elemental transistor level is critical to building human-like intelligent systems on silicon.

Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design

2009 ◽  
Vol 615-617 ◽  
pp. 915-918 ◽  
Author(s):  
A. Maralani ◽  
Michael S. Mazzola ◽  
David C. Sheridan ◽  
Igor Sankin ◽  
Volodymyr Bondarenko
Keyword(s):  
Integrated Circuits ◽  
Threshold Voltage ◽  
Integrated Circuit ◽  
Analog Circuit ◽  
Circuit Simulation ◽  
Analog Integrated Circuits ◽  
Effect Of Temperature ◽  
Common Source ◽  
Small Signal ◽  
Signal Parameters

The design of analog integrated circuits, for instance, the operational amplifiers, have been widely perfected with devices and processes available in silicon. However, analogous circuits have been the subject of research in Silicon Carbide (SiC). Among SiC devices, 4H-SiC Lateral-Trench JFET (LTJFET) transistor offers advantages and new opportunities to make affordable and reliable analog integrated circuits for harsh environment. In this paper: (1) SiC LTJFET is characterized for modeling and simulation, (2) effect of temperature variation on SiC LTJFET threshold voltage and small signal parameters are reported, (3) gain performance and small signal parameters of the basic analog circuit block, Common Source (CS) amplifier, based on the variation of the load transistors threshold voltage (Vth) are studied and analyzed, and (4) frequency and transient response of the cascoded CS amplifier (CS-Cas) are reported.

scholarly journals Printed Organic Complementary Inverter with Single SAM Process Using a p-type D-A Polymer Semiconductor

2018 ◽  
Vol 8 (8) ◽  
pp. 1331 ◽  
Author(s):  
Yasunori Takeda ◽  
Tomohito Sekine ◽  
Rei Shiwaku ◽  
Tomohide Murase ◽  
Hiroyuki Matsui ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Low Voltage ◽  
Ring Oscillator ◽  
Driving Voltage ◽  
Organic Thin Film ◽  
Voltage Range ◽  
Type D ◽  
Polymer Semiconductor ◽  
P Type

The demonstration of the complementary integrated circuit using printing processes is indispensable for realizing electronic devices using organic thin film transistors. Although complementary integrated circuits have advantages such as low power consumption and a wide output voltage range, complementary integrated circuits fabricated by the printing method have problems regarding driving voltage and performance. Studies on fabrication processes of electronic circuits for printing technology, including optimization and simplification, are also important research topics. In this study, the fabrication process of the printed complementary integrated circuit was simplified by applying a p-type donor-acceptor (D-A) polymer semiconductor, which is not strongly affected by the electrode work function. An inverter circuit and the ring oscillator circuit were demonstrated using this process. The fabricated ring oscillator array showed excellent performance, with low voltage operation and low performance variation.

Modeling of two complementary ambipolar organic thin film Transistors. Application to organic inverter

2020 ◽  
Author(s):  
Houaida Becharguia ◽  
M. Mahdouani ◽  
R. Bourguiga
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Electrical Parameters ◽  
P Type ◽  
Organic Inverter

In this paper, we have study two types of thin-film organic transistors as well as the organic inverter. For manufacturing p-type and n-type organic thin film transistors (OTFT), pentacene and N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) were used as organic semiconductors. The organic thin film transistors showed excellent ambipolar operation. This ambipolar device is very useful in building flexible integrated circuits with easy design and low power consumption. The characterization and modeling of complementary thin film organic transistors allows us to describe one of its important applications which are the "inverter". In order to better understand the operation of inverters, an analytical model has been developed to describe the electrical behavior of both types of transistors and organic inverter. The model was carried out for transistors and organic inverters made experimentally. In this present work, we present the different electrical parameters resulting from the modeling for the two types of transistors and the organic inverter wich based on the complementary OTFTs.

Complementary integrated circuits on plastic foil using inkjet printed n- and p-type organic semiconductors: Fabrication, characterization, and circuit analysis

2012 ◽  
Vol 13 (9) ◽  
pp. 1686-1692 ◽  
Author(s):  
Wiljan Smaal ◽  
Charlotte Kjellander ◽  
Yongbin Jeong ◽  
Ashutosh Tripathi ◽  
Bas van der Putten ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Organic Semiconductors ◽  
Circuit Analysis ◽  
Plastic Foil ◽  
P Type

Novel organic light-emitting transistors with PN-heteroboundary carrier recombination sites fabricated by lift-off patterning of organic semiconductor thin films

2007 ◽  
Vol 22 (11) ◽  
pp. 2982-2986 ◽  
Author(s):  
Naotoshi Suganuma ◽  
Noriyuki Shimoji ◽  
Yoshiaki Oku ◽  
Kazumi Matsushige
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Light Emitting ◽  
Carrier Recombination ◽  
Organic Light ◽  
Semiconductor Thin Films ◽  
Lift Off ◽  
P Type

The authors have devised a novel organic light-emitting transistor (OLET) with a PN-heteroboundary combined with hole and electron transport materials (in other words, p-type and n-type organic semiconductors) along carrier channels. In this device, a clear modulation of the current and luminance with the gate voltage was observed. A luminance of 100 cd/m2 or more has been observed at the source–source voltage of 15 V with the turn-on voltage of 10 V or less, which is lower than that of OLETs based on a single organic material. The horizontal PN-heteroboundary structure has been implemented for the first time by using the photolithographic patterning of organic semiconductor thin films. This patterning technique can be applied to the fabrication of not only the OLETs reported in this work, but also to organic integrated circuits or organic displays.

scholarly journals Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Inorganic Transistors

2021 ◽  
Author(s):  
Xiaozhu Wei ◽  
Shohei Kumagai ◽  
Tatsuyuki Makita ◽  
Kotaro Tsuzuku ◽  
Akifumi Yamamura ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Organic Semiconductors ◽  
High Speed ◽  
Printed Electronics ◽  
Supply Voltage ◽  
Propagation Delay ◽  
Ring Oscillator ◽  
Suitable Material ◽  
Amorphous Metal Oxide ◽  
P Type

Abstract Printed electronics offer a cost-efficient way to realise flexible electronic devices. The combined use of p-type and n-type semiconductors would yield silicon-like integrated circuits with low power consumption and stability. However, printing complementary circuits is challenging due to a lack of suitable material systems. To counter this, we employed a hybrid system to integrate p-type organic semiconductors (OSCs) and n-type amorphous metal oxide semiconductors (MOSs). These damage-free patterned OSC- and MOS-based thin-film transistors with improved process durability allowed the fabrication of hybrid complementary circuits on flexible substrates. These inverters functioned well even after exposure to air for 5 months. A large noise margin and power gain of 38 were realised with a supply voltage as low as 7 V. Furthermore, a five-stage ring oscillator with a stage propagation delay of 1.3 µs was achieved, which is the fastest operation ever reported for printed, flexible complementary inverters.

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