NMR-based diffusion lattice imaging

High resolution electron microscopy has been shown to give new information on defects(1) and phase transformations in solids (2,3). In a continuing program of lattice fringe imaging of alloys, we have applied this technique to the martensitic transformation in steels in order to characterize the atomic environments near twin, lath and αmartensite boundaries. This paper describes current progress in this program.Figures A and B show lattice image and conventional bright field image of the same area of a duplex Fe/2Si/0.1C steel described elsewhere(4). The microstructure consists of internally twinned martensite (M) embedded in a ferrite matrix (F). Use of the 2-beam tilted illumination technique incorporating a twin reflection produced {110} fringes across the microtwins.

Download Full-text

Lattice Imaging of Grain Boundaries in Ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100078171 ◽

1977 ◽

Vol 35 ◽

pp. 114-115

Author(s):

D. R. Clarke ◽

G. Thomas

Keyword(s):

Mechanical Properties ◽

High Temperature ◽

Silicon Nitride ◽

Grain Boundaries ◽

High Temperature Strength ◽

Current Interest ◽

Lattice Imaging ◽

Special Significance ◽

Structural Applications ◽

Refractory Ceramics

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.

Download Full-text

Analysis and lattice imaging of a transitional event on garnets

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100108490 ◽

1978 ◽

Vol 36 (1) ◽

pp. 270-271

Author(s):

J.Y. Laval

Keyword(s):

Yttrium Iron Garnet ◽

Reciprocal Lattice ◽

Transitional Zone ◽

Lattice Imaging ◽

Yttrium Iron ◽

X Ray ◽

Ionic Process ◽

The Matrix ◽

High Resolution Technique ◽

Iron Garnet

The exsolution of magnetite from a substituted Yttrium Iron Garnet, containing an iron excess may lead to a transitional event. This event is characterized hy the formation of a transitional zone at the center of which the magnetite nucleates (Fig.1). Since there is a contrast between the matrix and these zones and since selected area diffraction does not show any difference between those zones and the matrix in the reciprocal lattice, it is of interest to analyze the structure of the transitional zones.By using simultaneously different techniques in electron microscopy, (oscillating crystal method microdiffraction and X-ray microanalysis)one may resolve the ionic process corresponding to the transitional event and image this event subsequently by high resolution technique.

Download Full-text

Lattice imaging and pore structure of β ferric oxyhydroxide

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100108465 ◽

1978 ◽

Vol 36 (1) ◽

pp. 264-265

Author(s):

T. Baird ◽

J.R. Fryer ◽

S.T. Galbraith

Keyword(s):

Electron Microscopy ◽

Room Temperature ◽

Bulk Material ◽

Model Structure ◽

Bulk Crystals ◽

Lattice Imaging ◽

Thin Sections ◽

Ferric Oxyhydroxide ◽

Resolution Electron ◽

Hydrolysis Of

Introduction Previously we had suggested (l) that the striations observed in the pod shaped crystals of β FeOOH were an artefact of imaging in the electron microscope. Contrary to this adsorption measurements on bulk material had indicated the presence of some porosity and Gallagher (2) had proposed a model structure - based on the hollandite structure - showing the hollandite rods forming the sides of 30Å pores running the length of the crystal. Low resolution electron microscopy by Watson (3) on sectioned crystals embedded in methylmethacrylate had tended to support the existence of such pores.We have applied modern high resolution techniques to the bulk crystals and thin sections of them without confirming these earlier postulatesExperimental β FeOOH was prepared by room temperature hydrolysis of 0.01M solutions of FeCl3.6H2O, The precipitate was washed, dried in air, and embedded in Scandiplast resin. The sections were out on an LKB III Ultramicrotome to a thickness of about 500Å.

Download Full-text

Application of Lattice Imaging Techniques to Amorphous Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100113664 ◽

1975 ◽

Vol 33 ◽

pp. 8-9

Author(s):

S. R. Herd ◽

P. Chaudhari

Keyword(s):

Nearest Neighbor ◽

Random Network ◽

Imaging Techniques ◽

Network Models ◽

Accurate Method ◽

Direct Transmission ◽

Lattice Imaging ◽

Transmission Electron ◽

Lattice Planes ◽

Nearest Neighbor Distances

Electron diffraction and direct transmission have been used extensively to study the local atomic arrangement in amorphous solids and in particular Ge. Nearest neighbor distances had been calculated from E.D. profiles and the results have been interpreted in terms of the microcrystalline or the random network models. Direct transmission electron microscopy appears the most direct and accurate method to resolve this issue since the spacial resolution of the better instruments are of the order of 3Å. In particular the tilted beam interference method is used regularly to show fringes corresponding to 1.5 to 3Å lattice planes in crystals as resolution tests.

Download Full-text

Lattice imaging of precipitates in Al-Zn-Mg alloy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100143651 ◽

1986 ◽

Vol 44 ◽

pp. 412-413

Author(s):

C. K. Wu

Keyword(s):

Grain Boundaries ◽

Homogeneous Nucleation ◽

Alloy System ◽

Mg Alloy ◽

List Type ◽

Lattice Structures ◽

Type Number ◽

Orientation Relationships ◽

Lattice Imaging ◽

The Matrix

The precipitation phenomenon in Al-Zn-Mg alloy is quite interesting and complicated and can be described in the following categories:(i) heterogeneous nucleation at grain boundaries;(ii) precipitate-free-zones (PFZ) adjacent to the grain boundaries;(iii) homogeneous nucleation of snherical G.P. zones, n' and n phases inside the grains. The spherical G.P. zones are coherent with the matrix, whereas the n' and n phases are incoherent. It is noticed that n' and n phases exhibit plate-like morpholoay with several orientation relationship with the matrix. The high resolution lattice imaging techninue of TEM is then applied to study precipitates in this alloy system. It reveals the characteristics of lattice structures of each phase and the orientation relationships with the matrix.

Download Full-text

Systematic zone-Axis orientation of NM-scale particles for microdiffraction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100174448 ◽

1990 ◽

Vol 48 (4) ◽

pp. 262-263

Author(s):

E D Boyes ◽

L Hanna

Keyword(s):

Real Space ◽

Dark Field ◽

Zone Axis ◽

High Symmetry ◽

Lattice Imaging ◽

Cell Level ◽

Bright Field ◽

Axis Orientation ◽

Annular Dark Field ◽

Target Designation

A VG HB501 FEG STEM has been modified to provide track whilst tilt [TWIT] facilities for controllably tilting selected and initially randomly aligned nanometer-sized particles into the high symmetry zone-axis orientations required for microdiffraction, lattice imaging and chemical microanalysis at the unit cell level. New electronics display in alternate TV fields and effectively in parallel on split [+VTR] or adjacent externally synchronized screens, the micro-diffraction pattern from a selected area down to <1nm2 in size, together with the bright field and high angle annular dark field [HADF] STEM images of a much wider [˜1μm] area centered on the same spot. The new system makes it possible to tilt each selected and initially randomly aligned small particle into a zone axis orientation for microdiffraction, or away from it to minimize orientation effects in chemical microanalysis. Tracking of the inevitable specimen movement with tilt is controlled by the operator, with realtime [60Hz] update of the target designation in real space and the diffraction data in reciprocal space. The spot mode micro-DP and images of the surrounding area are displayed continuously. The regular motorized goniometer stage for the HB501STEM is a top entry design but the new control facilities are almost equivalent to having a stage which is eucentric with nanometric precision about both tilt axes.

Download Full-text

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171419 ◽

1994 ◽

Vol 52 ◽

pp. 736-737

Author(s):

A. Carlsson ◽

J.-O. Malm ◽

A. Gustafsson

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Quantum Wires ◽

Vapour Phase ◽

Quantitative Information ◽

Lattice Imaging ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy ◽

High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Download Full-text