Two-dimensional metal-semiconductor field effect transistor for ultra low power circuit applications

1994 ◽  
Vol 15 (7) ◽  
pp. 245-247 ◽  
Author(s):  
W.C.B. Peatman ◽  
H. Park ◽  
M. Shur
RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.


Nanoscale ◽  
2016 ◽  
Vol 8 (44) ◽  
pp. 18718-18725 ◽  
Author(s):  
Giacomo Bruno ◽  
Giancarlo Canavese ◽  
Xuewu Liu ◽  
Carly S. Filgueira ◽  
Adriano Sacco ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document