Low thermal-budget ultrathin NH/sub 3/-annealed atomic-layer-deposited Si-nitride/SiO/sub 2/ stack gate dielectrics with excellent reliability

2002 ◽  
Vol 23 (4) ◽  
pp. 179-181 ◽  
Author(s):  
Q.D.M. Khosru ◽  
A. Nakajima ◽  
T. Yoshimoto ◽  
S. Yokoyama
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
Thermal Budget ◽  
Low Thermal Budget

Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget

2021 ◽  
Vol 570 ◽  
pp. 151152
Author(s):  
Chin-I Wang ◽  
Chun-Yuan Wang ◽  
Teng-Jan Chang ◽  
Yu-Sen Jiang ◽  
Jing-Jong Shyue ◽  
...  
Keyword(s):  
Remnant Polarization ◽  
Atomic Layer ◽  
Thermal Budget ◽  
Capping Layer ◽  
Low Thermal Budget ◽  
Large Remnant Polarization

Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition

2020 ◽  
Vol 12 (39) ◽  
pp. 44225-44237
Author(s):  
Elham Rafie Borujeny ◽  
Oles Sendetskyi ◽  
Michael D. Fleischauer ◽  
Kenneth C. Cadien
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Thermal Budget ◽  
Layer Deposition ◽  
Low Thermal Budget

Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

1999 ◽  
Vol 567 ◽  
Author(s):  
S. C. Song ◽  
C. H. Lee ◽  
H. F. Luan ◽  
D. L. Kwong ◽  
M. Gardner ◽  
...  
Keyword(s):  
High Pressure ◽  
Gate Dielectrics ◽  
Nitrogen Concentration ◽  
Budget Process ◽  
High Nitrogen ◽  
High Quality ◽  
Thermal Budget ◽  
Hot Carrier ◽  
Low Thermal Budget ◽  
High Nitrogen Concentration

ABSTRACTIn this paper, we report a novel low thermal budget process (<800°C) for engineered ultra thin oxynitride dielectrics with high nitrogen concentration (>5% a.c.) using vertical high pressure (VHP) process. VHP grown oxynitride films show >1 OX lower leakage current, higher drive current and superior hot-carrier reliability compared to control SiO2 of identical thickness (Tox,eq) grown by RTP in O2.

scholarly journals Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process

2013 ◽  
Vol 102 (13) ◽  
pp. 131603 ◽  
Author(s):  
G. Seguini ◽  
E. Cianci ◽  
C. Wiemer ◽  
D. Saynova ◽  
J. A. M. van Roosmalen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Deposition Process ◽  
Thermal Budget ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition ◽  
Low Thermal Budget

Nitrided Silicon Oxide Gate Dielectrics for Submicron Device Technology

1996 ◽  
Vol 446 ◽  
Author(s):  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Device Fabrication ◽  
Quality Performance ◽  
Atom Concentration ◽  
Thermal Budget ◽  
Composition Profiles ◽  
Low Thermal Budget

AbstractThe research in this paper is based on an approach to low‐temperature/low‐thermal budget device fabrication that combines plasma and rapid thermal processing, and which has been customized to control separately: (i) the N‐atom bonding chemistry and composition profiles, and (ii) the structural and chemical relaxations necessary for device‐quality performance and reliability for stacked gate structures. Control of N‐atom incorporation at the monolayer level at the crystalline‐Si and polycrystalline‐Si interfaces of field effect transistors, and at alloy levels within the bulk dielectrics has been achieved by combining low‐temperature (∼300°C) plasma‐assisted processes to generate the N‐atom concentration profiles, with low‐thermal‐budget rapid thermal annealing (RTA) to promote chemical and structural relaxations that minimize defects and defect precursors.

Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing

1995 ◽  
Vol 34 (Part 1, No. 12B) ◽  
pp. 6827-6837 ◽  
Author(s):  
Gerald Lucovsky ◽  
David R. Lee ◽  
Sunil V. Hattangady ◽  
Hiro Niimi ◽  
Ze Jing ◽  
...  
Keyword(s):  
Nitrogen Atom ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Thermal Budget ◽  
Low Thermal Budget
Sign in / Sign up

Export Citation Format

Share Document