Inverter power module parasitics modeling with cross-coupling simplification for fast model extraction and switching characteristics simulation

2018 ◽  
Author(s):  
Thomas D. Bayer
Keyword(s):  
Cross Coupling ◽  
Power Module ◽  
Model Extraction ◽  
Switching Characteristics

A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000056-000060 ◽  
Author(s):  
Z. Cole ◽  
B. S. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Power Conversion ◽  
Three Dimensional ◽  
Boost Converter ◽  
Switching Frequency ◽  
Power Module ◽  
Element Analysis ◽  
Switching Characteristics ◽  
Three Dimensional Finite Element

In high frequency power conversion applications, the dominant mechanism attributed to power loss is the turn-on and -off transition times. To this end, a full-bridge silicon carbide (SiC) multi-chip power module (MCPM) was designed to minimize parasitics in order to reduce over-voltage/current spikes as well as resistance in the power path. The MCPM was designed and packaged using high temperature (> 200 °C) materials and processes. Using these advanced packaging materials and devices, the SiC MCPM was designed to exhibit low thermal resistance which was modeled using three-dimensional finite-element analysis and experimentally verified to be 0.18 °C/W. A good agreement between the model and experiment was achieved. MCPMs were assembled and the gate leakage, drain leakage, on-state characteristics, and on-resistance were measured over temperature. To verify low parasitic design, the SiC MCPM was inserted into a boost converter configuration and the switching characteristics were investigated. Extremely low rise and fall times of 16.1 and 7.5 ns were observed, respectively. The boost converter demonstrated an efficiency of > 98.6% at 4.8 kW operating at a switching frequency of 250 kHz. In addition, a peak efficiency of 96.5% was achieved for a switching frequency of 1.2 MHz and output power of 3 kW.

Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD

2020 ◽  
Vol 1004 ◽  
pp. 801-807
Author(s):  
Takaaki Tominaga ◽  
Shiro Hino ◽  
Yohei Mitsui ◽  
Junichi Nakashima ◽  
Koutarou Kawahara ◽  
...  
Keyword(s):  
High Frequency ◽  
Minority Carrier ◽  
Total Loss ◽  
Loss Reduction ◽  
Carrier Injection ◽  
Power Module ◽  
Chip Area ◽  
Dc Characteristics ◽  
High Frequency Operation ◽  
Switching Characteristics

A total loss reduction of 3.3 kV power module by using SiC-MOSFET embedding SBD has been demonstrated through the investigation of DC characteristics and switching characteristics. Despite 1.1 times larger on-resistance than that of conventional SiC-MOSFET due to larger cell pitch, superior switching characteristics of SiC-MOSFET embedding SBD, which are due to smaller total chip area than that of SiC-MOSFET coupled with external SBD and due to elimination of recovery charge by minority carrier injection compared with SiC-MOSFET utilizing its body diode, enable the total loss reduction especially for high frequency operation.

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

2006 ◽  
Vol 527-529 ◽  
pp. 1355-1358 ◽  
Author(s):  
Brett A. Hull ◽  
Mrinal K. Das ◽  
Jim Richmond ◽  
Bradley Heath ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
Pin Diode ◽  
High Current ◽  
Power Module ◽  
Temperature Dependent ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Blocking Voltage ◽  
Chip Size ◽  
Switching Characteristics ◽  
Vf Drift

Forward voltage (VF) drift, in which a 4H-SiC PiN diode suffers from an irreversible increase in VF under forward current flow, continues to inhibit commercialization of 4H-SiC PiN diodes. We present our latest efforts at fabricating high blocking voltage (6 kV), high current (up to 50 A) 4H-SiC PiN diodes with the best combination of reverse leakage current (IR), forward voltage at rated current (VF), and VF drift yields. We have achieved greater than 60% total die yield onwafer for 50 A diodes with a chip size greater than 0.7 cm2. A comparison of the temperature dependent conduction and switching characteristics between a 50 A/6 kV 4H-SiC PiN diode and a commercially available 60 A/4.5 kV Si PiN diode is also presented.

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 1066-1069 ◽  
Author(s):  
Shinya Sato ◽  
Hidekazu Tanisawa ◽  
Takeshi Anzai ◽  
Hiroki Takahashi ◽  
Yoshinori Murakami ◽  
...  
Keyword(s):  
High Temperature ◽  
Wide Temperature Range ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Module ◽  
Active Metal ◽  
Switching Characteristics

In this paper, we describe a power module fabricated using SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). A C-R snubber is integrated into this power module for reduction of the surge voltage and dumping of the voltage ringing. The four SiC MOSFETs are sandwiched between active metal copper (AMC) substrates. The surfaces of the SiC MOSFETs are attached to AMC substrates by Al bumps, owing to which the power module shows low inductance. Moreover, this power module ensures credibility and reliability at higher operating temperatures beyond 200 °C. The switching characteristics of the module are studied experimentally for high-temperature and high-frequency operations.

scholarly journals 4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance

Energies ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4602
Author(s):  
Junghun Kim ◽  
Kwangsoo Kim
Keyword(s):  
Computer Aided Design ◽  
Side Wall ◽  
Oxide Semiconductor ◽  
Heterojunction Diode ◽  
Power Module ◽  
Switching Performance ◽  
Conduction State ◽  
Effect Transistor ◽  
Switching Characteristics ◽  
Aided Design

In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations. The junction between P+ polysilicon and the N-drift layer forming a heterojunction diode on the side wall of the source trench region suppresses the operation of the PiN body diode during the reverse conduction state. Therefore, the injected minority carriers are completely suppressed, reducing the reverse recovery current by 73%, compared to the PiN body diodes. The switching characteristics of the proposed MOSFET using the heterojunction diode as a freewheeling diode was compared to the power module with a conventional MOSFET and an external diode as a freewheeling diode. It is shown that the switching performance of the proposed structure exhibits equivalent characteristics compared to the power module, enabling the elimination of an external freewheeling diode in the power system.

Flip-chip Bonded SiC Power Devices on a Low Temperature Co-fired Ceramic (LTCC) Substrate for Next Generation Power Modules

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000159-000168 ◽  
Author(s):  
Sayan Seal ◽  
Michael D. Glover ◽  
H. Alan Mantooth
Keyword(s):  
Flip Chip ◽  
State Of The Art ◽  
Power Devices ◽  
Power Module ◽  
Wire Bonds ◽  
Power Modules ◽  
And Performance ◽  
Switching Characteristics ◽  
Generation Power ◽  
Ltcc Substrate

Abstract This paper explores the design and performance benefits of an LTCC-based power module using SiC power devices. The goal of the design is to achieve high power density with an improved level of reliability as compared to the state-of-the-art, especially at elevated operating temperatures. This will enable a more complete leveraging of the benefits of SiC semiconductor technology. The reliability of existing power modules under high thermo-mechanical stress is adversely affected by the presence of wire bonds and by delamination at the die attachment interface between the die and substrate. As power devices are driven at higher frequencies, wire bonds will inhibit performance by introducing ringing and large overshoots due to the parasitic inductances they introduce in the critical switching loops in the circuit. A flip-chip bonding process for bonding the power devices has been investigated in this paper as an alternative to wire-bonding. It was found that flip-chip interconnects not only improved the switching characteristics of the device, but also reduced thermo-mechanical stresses on the bonding interface.

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